IXFR24N100_08 [IXYS]
HiPerFET Power MOSFET ISOPLUS247; HiPerFET功率MOSFET ISOPLUS247
| 型号： | IXFR24N100_08 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFET ISOPLUS247 |
| 文件： | 总4页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM Power
MOSFET
VDSS = 1000V
ID25 = 22A
RDS(on) ≤ 390mΩ
IXFR24N100
ISOPLUS247TM
trr
≤ 250ns
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
ISOPLUS247
E153432
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
1000
1000
V
V
VDGR
VGSS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
TC = 25°C
TC = 25°C, pulse width limited by TJM
22
96
A
A
Isolated Tab
IA
TC = 25°C
TC = 25°C
24
3
A
J
EAS
G = Gate
D = Drain
S = Source
dV/dt
PD
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
5
V/ns
W
416
Features
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
TL
TSOLD
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
300
260
°C
°C
• Low drain to tab capacitance(<30pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Avalanche rated
VISOL
50/60 Hz, RMS
t = 1min
t = 1s
2500
3000
V~
V~
IISOL ≤ 1mA
Md
Mounting force
20..120 / 4.5..27
5
N/lb.
g
l• Fast intrinsic Rectifier
Weight
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
(TJ = 25°C, unless otherwise specified)
• AC motor drives
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 8mA
VGS = ±20V, VDS = 0V
1000
3.0
V
Advantages
5.5
V
• Easy assembly
• Space savings
• High power density
±200 nA
IDSS
VDS = VDSS
VGS = 0V
100 μA
2 mA
TJ = 125°C
RDS(on)
VGS = 10V, ID = 12A, Note 1
390 mΩ
DS98599C(10/08)
© 2008 IXYS CORPORATION, All rights reserved
IXFR24N100
Symbol
Test Conditions
Characteristic Values
ISOPLUS247 (IXFR) Outline
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
gfs
VDS = 10V, ID = 12A, Note 1
15
27
S
Ciss
Coss
Crss
8700
785
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
315
td(on)
tr
td(off)
tf
35
35
75
21
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 12A
RG = 1Ω (External)
Qg(on)
Qgs
267
52
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 12A
Qgd
142
RthJC
RthCS
0.30 °C/W
°C/W
0.15
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
IS
VGS = 0V
24
A
A
V
ISM
VSD
Repetitive, pulse width limited by TJM
IF = 24A, VGS = 0V, Note 1
96
1.5
trr
QRM
IRM
250 ns
IF = 24A, -di/dt = 100A/μs
1.0
8.0
μC
A
VR = 100V, VGS = 0V
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2 7,157,338B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
IXFR24N100
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
24
20
16
12
8
55
50
45
40
35
30
25
20
15
10
5
VGS = 10V
7V
VGS = 10V
7V
6V
6V
5V
4
5V
0
0
0
0
0
1
2
3
4
5
6
7
8
9
0
3
6
9
12
15
18
21
24
27
30
150
150
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 12A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
24
20
16
12
8
2.8
VGS = 10V
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS = 10V
6V
I D = 24A
I D = 12A
5V
4
0
2
4
6
8
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 12A Value
vs. Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
24
22
20
18
16
14
12
10
8
VGS = 10V
TJ = 125ºC
6
4
TJ = 25ºC
2
0
5
10
15
20
25
30
35
40
45
50
55
-50
-25
0
25
50
75
100
125
ID - Amperes
TJ - Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved
IXFR24N100
Fig. 8. Transconductance
Fig. 7. Input Admittance
45
40
35
30
25
20
15
10
5
60
50
40
30
20
10
0
TJ = - 40ºC
TJ = 125ºC
25ºC
- 40ºC
25ºC
125ºC
0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
1.2
40
0
5
10
15
20
25
30
35
40
45
50
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
70
VDS = 500V
I D = 12A
60
50
40
30
20
10
0
I G = 10mA
TJ = 125ºC
TJ = 25ºC
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
30
60
90
120
150
180
210
240
270
VSD - Volts
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
100,000
10,000
1,000
100
1.000
0.100
0.010
= 1MHz
f
C
iss
C
oss
C
rss
0
5
10
15
20
25
30
35
0.001
0.01
0.1
1
10
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
Pulse Width - Seconds
IXYS REF: F_24N100(9X)10-17-08-C
相关型号：
©2020 ICPDF网 联系我们和版权申明