IXFX48N60P [IXYS]
PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode; PolarHVTM HiPerFET功率MOSFET N沟道增强型雪崩额定快速内在二极管
| 型号： | IXFX48N60P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode |
| 文件： | 总4页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarHVTM HiPerFET
Power MOSFET
IXFK 48N60P
IXFX 48N60P
VDSS
ID2
RDS(on)
=
=
≤
≤
600 V
48 A
135mΩ
200 ns
N-Channel Enhancement Mode
Avalanche Rated
trr
Fast Intrinsic Diode
TO-264 (IXFK)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25° C to 150° C
600
600
V
V
TJ = 25° C to 150° C; RGS = 1 MΩ
VGSS
VGSM
Continuous
Transient
30
40
V
V
G
D
S
(TAB)
ID25
IDM
TC =25° C
48
A
A
TC = 25° C, pulse width limited by TJM
110
PLUS247 (IXFX)
IAR
TC =25° C
48
A
EAR
EAS
TC =25° C
TC =25° C
70
mJ
J
2.0
dv/dt
PD
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤150° C, RG = 4 Ω
,
20
V/ns
(TAB)
TC =25° C
830
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
G = Gate
S = Source Tab = Drain
D
= Drain
Md
Mounting torque (TO-264)
1.13/10 Nm/lb.in.
Weight
TO-264
PLUS247
10
6
g
g
Features
l
l
l
International standard packages
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
°C
°C
l
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 8 mA
VGS = 30 VDC, VDS = 0
600
V
V
Advantages
3.0
5.0
l
200
nA
Easy to mount
Space savings
l
IDSS
VDS = VDSS
VGS = 0 V
25
1000
µA
µA
l
High power density
TJ = 125° C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
135 mΩ
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
DS99375E(02/06)
© 2006 IXYS All rights reserved
IXFK 48N60P IXFX 48N60P
TO-264 (IXFK) Outline
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
VDS = 20 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
35
53
S
Ciss
Coss
Crss
8860
850
60
pF
pF
pF
td(on)
tr
td(off)
tf
30
25
85
22
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 ID25
RG = 2 Ω (External)
Qg(on)
Qgs
150
50
nC
nC
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
50
RthJC
RthCs
0.15 ° C/W
° C/W
TO-264 and PLUS247
0.15
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
Symbol
IS
Test Conditions
PLUS 247TM (IXFX) Outline
VGS = 0 V
Repetitive
48
110
1.5
A
ISM
A
V
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
trr
IF = 25A, -di/dt = 100 A/µs
200
ns
QRM
IRM
VR = 100V
0.8
6.0
µC
A
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
e
5.45 BSC
.215 BSC
L
L1
19.81 20.32
.780 .800
.150 .170
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
IXFK 48N60P IXFX 48N60P
Fig. 1. Output Characteristics
@ 25
Fig. 2. Extended Output Characteristics
º
C
@ 25 C
º
50
45
40
35
30
25
20
15
10
5
V
GS
= 10V
8V
V
GS
= 10V
8V
120
100
80
60
40
20
0
7V
7V
6V
6V
5V
5V
16
0
0
4
8
12
2 0
2 4
0
1
2
3
4
5
6
VD S - Volts
VD S - Volts
Fig. 3. Output Characteristics
@ 125
Fig. 4. RDS(on Normalized to 0.5 ID25
)
ºC
Value vs. Junction Temperature
50
45
40
35
30
25
20
15
10
5
3.1
2.8
2.5
2.2
1.9
1.6
1.3
1
V
GS
= 10V
7V
V
GS
= 10V
6V
I
= 48A
D
I
= 24A
D
5V
0.7
0.4
0
-50
-25
0
25
50
75
100 125 150
0
2
4
6
8
10
12
14
VD S - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to
0.5 ID25 Value vs. ID
Fig. 6. Drain Current vs. Case
Temperature
3.4
3.1
2.8
2.5
2.2
1.9
1.6
1.3
1
50
45
40
35
30
25
20
15
10
5
V
= 10V
GS
T = 125ºC
J
T = 25ºC
J
0
0.7
-50
-25
0
25
50
75
100 125 150
0
20
40
60
80
100
120
140
I D - Amperes
TC - Degrees Centigrade
© 2006 IXYS All rights reserved
IXFK 48N60P IXFX 48N60P
Fig. 8. Transconductance
Fig. 7. Input Admittance
100
90
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
T = 125ºC
J
25ºC
-40ºC
T = -40ºC
J
25ºC
125ºC
4
4.5
5
5.5
6
6.5
7
0
10 20
30
40 50
I D - Amperes
60
70 80
90
VG S - Volts
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
160
140
120
100
80
10
9
8
7
6
5
4
3
2
1
0
V
= 300V
DS
I
I
= 24A
D
G
= 10mA
60
T = 125ºC
J
40
T = 25ºC
J
20
0
0
20
40
60
80
100 120 140 160
0.4 0.5 0.6 0.7 0.8 0.9
VS D - Volts
1
1.1 1.2 1.3
Q G - nanoCoulombs
Fig. 13. Maximum Transient Thermal
Resistance
Fig. 11. Capacitance
100000
10000
1000
100
1.00
f = 1MHz
C
C
iss
oss
0.10
C
rss
35
10
0.01
0
5
10
15
20
25
30
40
1
10
100
1000
VD S - Volts
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
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