IXGA12N100U1 [IXYS]
IGBT - Combi Pack; IGBT - Combi机包型号: | IXGA12N100U1 |
厂家: | IXYS CORPORATION |
描述: | IGBT - Combi Pack |
文件: | 总4页 (文件大小:119K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
VCES
IC25
VCE(sat)
IGBT
IXGA/IXGP12N100U1
1000 V
24 A
24 A
3.5 V
4.0 V
Combi Pack
IXGA/IXGP12N100AU1 1000 V
Preliminary Data Sheet
TO-220AB(IXGP)
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
1000
1000
V
V
TJ = 25°C to 150°C; RGE = 1 MW
G
C
E
VGES
VGEM
Continuous
Transient
±20
±30
V
V
TO-263 AA (IXGA)
IC25
IC90
ICM
TC = 25°C
24
12
48
A
A
A
TC = 90°C
TC = 25°C, 1 ms
G
E
SSOA
VGE = 15 V, TVJ = 125°C, RG = 150 W
Clamped inductive load, L = 300 mH
ICM = 24
A
C (TAB)
(RBSOA)
@ 0.8 VCES
PC
TC = 25°C
100
W
TJ
-55 ... +150
150
°C
°C
°C
Features
TJM
Tstg
• Internationalstandardpackages
JEDEC TO-220AB and TO-263AA
• IGBT with antiparallel FRED in one
package
-55 ... +150
Md
Mounting torque with screw M3
Mounting torque with screw M3.5
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
• Second generation HDMOSTM process
• Low VCE(sat)
Weight
4
g
- forminimumon-stateconduction
losses
• MOS Gate turn-on
Maximumleadtemperatureforsoldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
- drive simplicity
• Fast Recovery Expitaxial Diode (FRED)
- soft recovery with low IRM
Symbol
TestConditions
CharacteristicValues
Applications
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptiblepowersupplies(UPS)
• Switch-modeandresonant-mode
power supplies
BVCES
VGE(th)
IC = 3 mA, VGE = 0 V
1000
2.5
V
V
IC = 250 mA, VGE = VGE
5.5
ICES
VCE = 0.8, VCES
VGE= 0 V
TJ = 25°C
300
3
mA
TJ = 125°C
mA
Advantages
• Easy to mount with one screw
• Space savings (two devices in one
package)
• Reduces assembly time and cost
• High power density
IGES
VCE = 0 V, VGE = ±20 V
±100
nA
VCE(sat)
IC = ICE90, VGE = 15
12N100
12N100A
3.5
4.0
V
V
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
95592A (3/97)
1 - 4
IXGA12N100U1
IXGA12N100AU1
IXGP12N100U1
IXGP12N100AU1
Symbol
TestConditions
CharacteristicValues
Min. Typ. Max.
TO-220 AB (IXGP) Outline
(TJ = 25°C, unless otherwise specified)
gfs
IC = IC90; VCE = 10 V,
6
10
S
Pulse test, t £ 300 ms, duty cycle £ 2 %
Qg
65
8
90
20
45
nC
nC
nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
24
td(on)
tri
td(off)
tfi
100
200
ns
ns
ns
ns
ns
mJ
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 300 mH
VCE = 800 V, RG = Roff = 120 W
Remarks: Switching times may
850 1000
500 700
800 1000
12N100A
12N100
increase for VCE (Clamp) > 0.8 VCES
higher TJ or increased RG
,
Dim.
Millimeter
Inches
Eoff
12N100A
4
6
Min. Max.
Min. Max.
A
B
12.70 13.97 0.500 0.550
14.73 16.00 0.580 0.630
td(on)
tri
100
200
1.1
ns
ns
Inductive load, TJ = 125°C
C
D
9.91 10.66 0.390 0.420
IC = IC90, VGE = 15 V, L = 300 mH
VCE = 800 V, RG = Roff = 120 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES
higher TJ or increased RG
3.54
4.08 0.139 0.161
Eon
td(off)
tfi
mJ
ns
E
F
5.85
2.54
6.85 0.230 0.270
3.18 0.100 0.125
900
950
1250
8
12N100A
12N100
12N100A
12N100
ns
G
H
1.15
2.79
1.65 0.045 0.065
5.84 0.110 0.230
,
ns
J
K
0.64
1.01 0.025 0.040
Eoff
mJ
mJ
2.54 BSC 0.100 BSC
M
N
4.32
1.14
4.82 0.170 0.190
1.39 0.045 0.055
10
Q
R
0.35
2.29
0.56 0.014 0.022
2.79 0.090 0.110
RthJC
RthCK
1.25 K/W
K/W
0.25
TO-263 AA (IXGA) Outline
Reverse Diode (FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
Test Conditions
Min.
Typ.
Max.
VF
IF =8A, VGE = 0 V,
2.75
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IRM
trr
IF = IC90, VGE = 0 V, -diF/dt = 100 A/ms
VR = 100 V, TJ = 125°C
6.5
140
50
A
ns
ns
IF = 1 A, -di/dt = 50 A/ms, VR = 30 V TJ = 25°C
60
RthJC
2.5 K/W
Dim.
Millimeter
Inches
Min.
Max.
Min. Max.
A
A1
4.06
2.03
4.83
2.79
.160 .190
.080 .110
b
b2
0.51
1.14
0.99
1.40
.020 .039
.045 .055
Min. Recommended Footprint
c
c2
0.46
1.14
0.74
1.40
.018 .029
.045 .055
D
D1
8.64
7.11
9.65
8.13
.340 .380
.280 .320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380 .405
.270 .320
.100 BSC
L
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575 .625
.090 .110
.040 .055
.050 .070
L1
L2
L3
L4
0
.015
R
0.46
0.74
.018 .029
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 4
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXGA12N100U1
IXGA12N100AU1
IXGP12N100U1
IXGP12N100AU1
100
50
40
30
20
10
0
VGE = 15V
TJ = 25°C
TJ = 25°C
VGE = 15V
13V
11V
80
60
40
20
0
13V
11V
9V
7V
9V
7V
0
4
8
12
16
20
0
2
4
6
8
10
VCE - Volts
Figure 2. Extended Output Characteristics
VCE - Volts
Figure 1. Saturation Voltage Characteristics
1.6
50
40
30
20
10
0
VGE = 15V
TJ = 125°C
VGE = 15V
IC = 24A
13V
1.4
1.2
1.0
0.8
0.6
11V
9V
I
C = 12A
7V
IC = 6A
25
50
75
100
125
150
0
2
4
6
8
10
VCE - Volts
TJ - Degrees C
Figure 3. Saturation Voltage Characteristics
Figure 4. Temperature Dependence of VCE(sat)
1000
50
40
30
20
10
0
VCE = 10V
f = 1Mhz
C
iss
TJ = 25°C
C
oss
TJ = 125°C
100
10
C
rss
2
4
6
8
10
12
0
5
10 15 20 25 30 35 40
VGE - Volts
Figure 5. Admittance Curves
VCE-Volts
Figure 6. Capacitance Curves
© 2000 IXYS All rights reserved
3 - 4
IXGA12N100U1
IXGA12N100AU1
IXGP12N100U1
IXGP12N100AU1
5
4
3
2
1
1200
1100
1000
900
1000
800
600
400
5
TJ = 125°C
RG = 120
TJ = 125°C
tfi
IC = 12A
4
t
fi
3
2
1
0
E(OFF)
E(OFF)
200
800
0
0
5
10
IC - Amperes
15
20
0
30
60
RG - Ohms
Figure 8. Dependence of tfi and EOFF on RG.
90
120
150
Figure 7. Dependence of tfi and EOFF on IC.
100
24
10
15
12
9
IC = 30A
VCE = 150V
TJ = 125°C
RG = 4.7
dV/dt < 5V/ns
6
1
3
0.1
0
0
200
400
600
800
1000
0
15
30
45
60
75
VCE - Volts
Qg - nanocoulombs
Figure 9. Gate Charge
Figure 10. Turn-off Safe Operating Area
1
0.1
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
D = Duty Cycle
Single pulse
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
Figure 11. Transient Thermal Resistance
© 2000 IXYS All rights reserved
4 - 4
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