IXGA24N60C4 [IXYS]
Insulated Gate Bipolar Transistor;
| 型号： | IXGA24N60C4 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor 栅 |
| 文件： | 总2页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
High-Gain IGBTs
VCES = 600V
IC110 = 24A
VCE(sat) ≤ 2.70V
tfi(typ) = 68ns
IXGA24N60C4
IXGP24N60C4
IXGH24N60C4
High-Speed PT Trench IGBTs
TO-263 (IXGA)
G
E
C (Tab)
TO-220 (IXGP)
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
V
TJ = 25°C to 150°C, RGE = 1MΩ
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
C
C (Tab)
E
TO-247 (IXGH)
IC25
IC110
TC = 25°C
TC = 110°C
56
24
A
A
ICM
TC = 25°C, 1ms
130
A
SSOA
VGE = 15V, TVJ = 125°C, RG = 10Ω
Clamped Inductive Load
ICM = 48
A
G
(RBSOA)
@ ≤ VCES
C
E
C (Tab)
PC
TC = 25°C
190
W
TJ
TJM
Tstg
-55 ... +150
150
°C
°C
°C
G = Gate
E = Emitter
C
= Collector
Tab = Collector
-55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Features
z Optimized for Low Switching Losses
z Square RBSOA
FC
Md
Mounting Force (TO-263)
Mounting Torque (TO-220 & TO-247)
10..65 / 2.2..14.6
1.13 / 10
N/lb.
Nm/lb.in.
z International Standard Packages
Weight
TO-263
TO-220
TO-247
2.5
3.0
6.0
g
g
g
Advantages
z High Power Density
z Low Gate Drive Requirement
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified
Min.
600
4.0
Typ.
Max.
BVCES
VGE(th)
ICES
IC = 250μA, VGE= 0V
IC = 250μA, VCE = VGE
VCE = VCES, VGE = 0V
V
V
Applications
6.5
z Power Inverters
z UPS
10 μA
TJ = 125°C
TJ = 125°C
500 μA
z Motor Drives
z SMPS
IGES
VCE = 0V, VGE = ±20V
±100 nA
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
VCE(sat)
IC = IC110, VGE = 15V, Note 1
2.28
1.95
2.70
V
V
© 2012 IXYS CORPORATION, All Rights Reserved
DS100253B(12/12)
IXGA24N60C4 IXGP24N60C4
IXGH24N60C4
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
TO-220 Outline
Min.
Typ.
Max.
gfs
Cie
Coes
Cres
IC = IC110, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
10
17
S
875
60
pF
pF
pF
s
28
Qg
64
7
nC
nC
nC
Qge
Qgc
IC = IC110, VGE = 15V, VCE = 0.5 • VCES
28
td(on)
tri
21
33
ns
ns
Inductive load, TJ = 25°C
IC = IC110, VGE = 15V
Eon
td(off)
tfi
0.40
143
68
mJ
Terminals: 1 - Gate
3 - Emitter
2 - Collector
VCE = 360V, RG = 10Ω
ns
ns
Note 2
Eof
0.30
0.55 mJ
f
td(on)
tri
20
32
ns
ns
Inductive load, TJ = 125°C
IC = IC110, VGE = 15V
Eon
td(off)
tfi
0.63
130
118
0.50
mJ
ns
VCE = 360V, RG = 10Ω
ns
Note 2
Eoff
mJ
RthJC
RthCS
0.65 °C/W
°C/W
TO-247
0.21
TO-247 Outline
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
∅ P
1
2
3
TO-263 Outline
e
Terminals: 1 - Gate
3 - Emitter
2 - Collector
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
1 = Gate
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
2 = Collector
3 = Emitter
4 = Collector
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
e
L
L1
5.20
19.81 20.32
4.50
5.72 0.205 0.225
.780 .800
.177
∅P 3.55
Q
3.65
.140 .144
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
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