IXGH30N60B [IXYS]

HiPerFASTTM IGBT; HiPerFASTTM IGBT
IXGH30N60B
型号: IXGH30N60B
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

HiPerFASTTM IGBT
HiPerFASTTM IGBT

晶体 晶体管 功率控制 双极性晶体管 栅 局域网
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中文:  中文翻译
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HiPerFASTTM IGBT  
IXGH30N60B  
IXGT30N60B  
VCES  
IC25  
= 600 V  
= 60 A  
VCE(sat) = 1.8 V  
tfi  
= 100 ns  
TO-247 AD  
(IXGH)  
Symbol  
TestConditions  
MaximumRatings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MW  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
TAB)  
G
C
E
IC25  
IC110  
ICM  
TC = 25°C  
60  
30  
A
A
A
TC = 110°C  
TO-268 (D3)  
(IXGT)  
TC = 25°C, 1 ms  
120  
SSOA  
(RBSOA)  
VGE= 15 V, TVJ = 125°C, RG = 33 W  
Clamped inductive load, L = 100 mH  
ICM = 60  
@ 0.8 VCES  
A
G
(TAB)  
E
PC  
TC = 25°C  
200  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
G = Gate,  
C = Collector,  
E = Emitter,  
TAB = Collector  
-55 ... +150  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Features  
• Internationalstandardpackages  
JEDEC TO-268 surface  
Md  
Mountingtorque(M3)  
1.13/10 Nm/lb.in.  
mountable and JEDEC TO-247 AD  
• Highcurrenthandlingcapability  
• Latest generation HDMOSTM process  
• MOS Gate turn-on  
Weight  
6
g
- drive simplicity  
Applications  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
• Uninterruptiblepowersupplies(UPS)  
• Switched-modeandresonant-mode  
powersupplies  
BVCES  
VGE(th)  
IC = 250 mA, VGE = 0 V  
BVCEStemperaturecoefficient  
600  
2.5  
V
%/K  
0.072  
IC = 250 mA, VCE = VGE  
5
V
VGE(th) temperature coefficient  
-0.286  
%/K  
Advantages  
• Space savings (two devices in one  
package)  
• High power density  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 150°C  
200  
1
mA  
mA  
• Suitableforsurfacemounting  
• Switching speed for high frequency  
applications  
• Easy to mount with 1 screw,TO-247  
(isolatedmountingscrewhole)  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
VCE(sat)  
VCE(sat)  
IC = IC110, VGE = 15 V  
IC = IC110, VGE = 15 V  
1.8  
2.0  
V
V
TJ = 150°C  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
97516D(7/00)  
1 - 2  
IXGH30N60B  
IXGT30N60B  
Symbol  
gfs  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD (IXGH) Outline  
IC = IC110; VCE = 10 V,  
25  
S
Pulse test, t £ 300 ms, duty cycle £ 2 %  
Cies  
Coes  
Cres  
2700  
190  
50  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
Qg  
125  
23  
150 nC  
35 nC  
75 nC  
Qge  
Qgc  
IC = IC110, VGE = 15 V, VCE = 0.5 VCES  
50  
td(on)  
tri  
td(off)  
tfi  
Inductive load, TJ = 25°C  
25  
30  
ns  
ns  
Dim. Millimeter  
Inches  
Min. Max. Min. Max.  
IC = IC110, VGE = 15 V, L = 100 mH,  
VCE = 0.8 VCES, RG = Roff = 4.7 W  
A
B
19.81 20.32 0.780 0.800  
20.80 21.46 0.819 0.845  
130  
100  
1.3  
220 ns  
190 ns  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
C
D
15.75 16.26 0.610 0.640  
3.55 3.65 0.140 0.144  
,
,
Eoff  
2
mJ  
E
F
4.32 5.49 0.170 0.216  
5.4  
6.2 0.212 0.244  
td(on)  
tri  
25  
35  
ns  
ns  
Inductive load, TJ = 150°C  
G
H
1.65 2.13 0.065 0.084  
-
4.5  
-
0.177  
IC = IC110, VGE = 15 V, L = 100 mH  
Eon  
td(off)  
tfi  
0.3  
200  
290  
3
mJ  
ns  
J
1.0  
1.4 0.040 0.055  
VCE = 0.8 VCES, RG = Roff = 4.7 W  
K
10.8 11.0 0.426 0.433  
L
M
4.7  
0.4  
5.3 0.185 0.209  
0.8 0.016 0.031  
Remarks: Switching times may  
increase for VCE (Clamp) > 0.8 • VCES  
higher TJ or increased RG  
ns  
N
1.5 2.49 0.087 0.102  
Eoff  
mJ  
RthJC  
RthCK  
0.62 K/W  
K/W  
0.25  
(IXGH30N60B)  
IXBH30N60B characteristic curves are located in the IXBH30N60BU1 data sheet.  
TO-268AA (D3 PAK)  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
Min. Recommended Footprint  
A
A1  
A2  
4.9  
2.7  
.02  
5.1  
2.9  
.25  
.193 .201  
.106 .114  
.001 .010  
b
b2  
C
1.15  
1.9  
.4  
1.45  
2.1  
.65  
.045 .057  
.75  
.83  
.016 .026  
D
E
E1  
13.80 14.00  
15.85 16.05  
.543 .551  
.624 .632  
.524 .535  
13.3  
5.45 BSC  
18.70 19.10  
13.6  
e
H
L
.215 BSC  
.736 .752  
.094 .106  
2.40  
2.70  
L1  
L2  
L3  
L4  
1.20  
1.00  
0.25 BSC  
1.40  
1.15  
.047 .055  
.039 .045  
.010 BSC  
3.80  
4.10  
.150 .161  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 2  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  

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