IXGM25N100A [IXYS]
Low VCE(sat), High speed IGBT; 低VCE （SAT） ，高速IGBT
| 型号： | IXGM25N100A |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Low VCE(sat), High speed IGBT |
| 文件： | 总4页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VCES
IC25 VCE(sat)
Low VCE(sat)
High speed IGBT
IXGH/IXGM 25 N100 1000 V 50 A 3.5 V
IXGH/IXGM 25 N100A 1000 V 50 A 4.0 V
Symbol
TestConditions
Maximum Ratings
TO-247 AD (IXGH)
VCES
VCGR
TJ = 25°C to 150°C
1000
1000
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
C
E
IC25
IC90
ICM
TC = 25°C
50
25
A
A
A
TO-204 AE (IXGM)
TC = 90°C
TC = 25°C, 1 ms
100
SSOA
(RBSOA)
VGE= 15 V, TVJ = 125°C, RG = 33 Ω
Clamped inductive load, L = 100 µH
ICM = 50
@ 0.8 VCES
A
PC
TC = 25°C
200
W
C
TJ
-55 ... +150
150
°C
°C
°C
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
TJM
Tstg
-55 ... +150
Md
Mounting torque (M3)
1.13/10 Nm/lb.in.
Features
l
International standard packages
2nd generation HDMOSTM process
Low VCE(sat)
- for low on-state conduction losses
High current handling capability
MOS Gate turn-on
Weight
TO-204 = 18 g, TO-247 = 6 g
l
l
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
l
l
- drive simplicity
Voltage rating guaranteed at high
l
temperature (125°C)
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
l
BVCES
VGE(th)
IC = 3 mA, VGE = 0 V
1000
2.5
V
V
l
l
IC = 250 µA, VCE = VGE
5
l
l
ICES
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
250 µA
mA
1
IGES
VCE = 0 V, VGE = ±20 V
±100 nA
Advantages
Easy to mount with 1 screw (TO-247)
l
VCE(sat)
IC = IC90, VGE = 15 V
25N100
25N100A
3.5
4.0
V
V
(isolated mounting screw hole)
High power density
l
91516E (3/96)
© 1996 IXYS All rights reserved
IXGH 25N100
IXGM 25N100
IXGH 25N100A IXGM 25N100A
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
TO-247 AD Outline
min. typ. max.
IC = IC90; VCE = 10 V,
8
15
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
2750
200
50
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
130
25
180 nC
60 nC
90 nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
55
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 300 µH,
td(on)
tri
td(off)
tfi
100
200
500
500
5
ns
ns
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
VCE = 0.8 VCES, RG = Roff = 33 Ω
Remarks: Switching times
may increase
for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
ns
25N100A
25N100A
ns
,
Eoff
mJ
td(on)
tri
100
250
3.5
ns
ns
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 300 µH
Eon
td(off)
tfi
mJ
V
CE = 0.8 VCES, RG = Roff = 33 Ω
720 1000 ns
Remarks: Switching times
may increase
25N100
25N100A
950 3000 ns
800 1500 ns
for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
,
Eoff
25N100
25N100A
10
8
mJ
mJ
RthJC
RthCK
0.62 K/W
K/W
TO-204AE Outline
0.25
1 = Gate
2 = Emitter
Case = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
IXGH 25N100
IXGM 25N100
IXGH 25N100A IXGM 25N100A
Fig. 1 Saturation Characteristics
Fig. 2 Output Characterstics
50
45
40
35
30
25
20
15
10
5
200
13V
11V
VG E= 15V
VGE = 15V
TJ = 25°C
TJ = 25°C
180
160
140
120
100
80
9V
13V
11V
7V
9V
60
40
7V
20
0
0
0
1
2
3
4
5
0
2
4
6
8
10 12 14 16 18 20
VCE - Volts
VCE - Volts
Fig. 3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
Fig. 4 Temperature Dependence
of Output Saturation Voltage
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
10
9
8
7
6
5
4
3
2
1
0
I
C = 50A
TJ = 25°C
I
C = 50A
IC = 25A
I
C = 25A
IC = 12.5A
IC = 12.5A
6
7
8
9
10 11 12 13 14 15
VGE - Volts
-50 -25
0
25 50 75 100 125 150
TJ - Degrees C
Fig. 5 Input Admittance
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
50
40
30
20
10
0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VGE(th)
VCE = 10V
IC = 250µA
BVCES
IC = 250µA
TJ = 25°C
TJ = 125°C
TJ = - 40°C
0
1
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75 100 125 150
TJ - Degrees C
VGE - Volts
© 1996 IXYS All rights reserved
IXGH 25N100
IXGM 25N100
IXGH 25N100A IXGM 25N100A
Fig.7 Gate Charge
Fig.8 Turn-Off Safe Operating Area
15
13
11
9
100
VCE = 800V
IC = 25A
IG = 10mA
10
TJ = 125°C
dV/dt < 3V/ns
1
7
5
0.1
3
1
0.01
0
25
50
75
100
125
150
0
200
400
600
800
1000
Gate Charge - nCoulombs
VCE - Volts
Fig.9 Capacitance Curves
f = 1MHz
Cies
2400
2000
1600
1200
800
400
0
Coes
Cres
0
5
10
15
20
25
VCE - Volts
Fig.10 Transient Thermal Impedance
1
D=0.5
D=0.2
D=0.1
D=0.05
0.1
D = Duty Cycle
D=0.02
D=0.01
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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