IXGM40N60 [IXYS]
Low VCE(sat) IGBT, High speed IGBT; 低VCE （ SAT ）的IGBT ，高速IGBT
| 型号： | IXGM40N60 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Low VCE(sat) IGBT, High speed IGBT |
| 文件： | 总4页 (文件大小：110K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VCES
600 V 75 A 2.5 V
IXGH/IXGM 40 N60A 600 V 75 A 3.0 V
IC25 VCE(sat)
Low VCE(sat) IGBT
High speed IGBT
IXGH/IXGM 40 N60
Symbol
TestConditions
Maximum Ratings
TO-247 AD (IXGH)
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
C
E
IC25
IC90
ICM
TC = 25°C, limited by leads
TC = 90°C
75
40
A
A
A
TO-204 AE (IXGM)
TC = 25°C, 1 ms
150
SSOA
VGE= 15 V, TVJ = 125°C, RG = 22 Ω
ICM = 80
A
(RBSOA)
Clamped inductive load, L = 30 µH
@ 0.8 VCES
PC
TC = 25°C
250
W
C
TJ
-55 ... +150
150
°C
°C
°C
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
TJM
Tstg
-55 ... +150
Md
Mounting torque (M3)
1.13/10 Nm/lb.in.
Features
l
International standard packages
2nd generation HDMOSTM process
Low VCE(sat)
- for low on-state conduction losses
High current handling capability
MOS Gate turn-on
Weight
TO-204 = 18 g, TO-247 = 6 g
l
l
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
l
l
- drive simplicity
l
Voltage rating guaranteed at high
temperature (125°C)
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
l
BVCES
VGE(th)
IC = 250 µA, VGE = 0 V
IC = 250 µA, VCE = VGE
600
2.5
V
V
l
l
l
l
5
ICES
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
200 µA
mA
1
IGES
VCE = 0 V, VGE = ±20 V
±100 nA
Advantages
Easy to mount with 1 screw (TO-247)
l
VCE(sat)
IC = IC90, VGE = 15 V
40N60
40N60A
2.5
3.0
V
V
(isolated mounting screw hole)
High power density
l
91513E (3/96)
© 1996 IXYS All rights reserved
IXGH 40N60 IXGM 40N60
IXGH 40N60A IXGM 40N60A
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
TO-247 AD Outline
min. typ. max.
IC = IC90; VCE = 10 V,
25
35
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
4500
300
60
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
200
45
250 nC
80 nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
88
120 nC
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
100
200
600
200
3
ns
ns
1 = Gate
IC = IC90, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = Roff = 22 Ω
Switching times may increase
for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
2 = Collector
3 = Emitter
Tab = Collector
ns
,
40N60A
40N60A
ns
Eoff
mJ
Inductive load, TJ = 125°C
td(on)
tri
100
200
4
ns
ns
IC = IC90, VGE = 15 V,
L = 100 µH
Eon
td(off)
tfi
mJ
VCE = 0.8 VCES
,
600 1000 ns
RG = Roff = 22 Ω
40N60
40N60A
600 2000 ns
300
Remarks: Switching times
may increase for VCE
800 ns
(Clamp) > 0.8 • VCES, higher
TJ or increased RG
Eoff
40N60
40N60A
12
6
mJ
mJ
TO-204AE Outline
RthJC
RthCK
0.5 K/W
K/W
0.25
1 = Gate
2 = Emitter
Case = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
IXGH 40N60 IXGM 40N60
IXGH 40N60A IXGM 40N60A
Fig. 1 Saturation Characteristics
Fig. 2 Output Characterstics
80
70
60
50
40
30
20
10
0
350
13V
11V
VGE = 15V
TJ = 25°C
TJ = 25°C
300
250
200
150
100
50
9V
VGE = 15V
13V
11V
9V
7V
5V
7V
5V
0
0
1
2
3
4
5
0
2
4
6
8
10 12 14 16 18 20
VCE - Volts
VCE - Volts
Fig. 3 Collector-Emitter Voltage
vs. Gate-Emitter Voltage
Fig. 4 Temperature Dependence
of Output Saturation Voltage
10
9
8
7
6
5
4
3
2
1
0
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
TJ = 25°C
IC = 80A
I
C = 40A
IC = 40A
C = 20A
IC = 20A
I
4
5
6
7
8
9
10 11 12 13 14 15
-50 -25
0
25 50 75 100 125 150
TJ - Degrees C
VGE - Volts
Fig. 5 Input Admittance
Fig. 6 Temperature Dependence of
Breakdown and Threshold Voltage
80
70
60
50
40
30
20
10
0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
VCE = 100V
V
GE(th) @ 250µA
BVCES @ 3mA
TJ = 25°C
TJ = 125°C
0
1
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75 100 125 150
TJ - Degrees C
VGE - Volts
© 1996 IXYS All rights reserved
IXGH 40N60 IXGM 40N60
IXGH 40N60A IXGM 40N60A
Fig.7 Gate Charge
Fig.8 Turn-Off Safe Operating Area
15
12
9
100
IC = 40A
TJ = 125°C
V
CE= 500V
dV/dt < 3V/ns
10
1
0.1
6
3
0
0.01
0
50
100
150
200
250
0
100 200 300 400 500 600 700
VCE - Volts
Total Gate Charge - (nC)
Fig.9 Capacitance Curves
4500
4000
3500
3000
2500
2000
1500
1000
500
Cies
Coes
Cres
0
0
5
10
15
20
25
VCE - Volts
Fig.10 Transient Thermal Impedance
1
0.1
D=0.5
D=0.2
D=0.1
D=0.05
D=0.02
D=0.01
D = Duty Cycle
0.01
0.001
Single Pulse
0.00001
0.0001
0.001
0.01
Pulse Width - seconds
0.1
1
10
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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