IXGM30N60A [IXYS]
Low VCE(sat) IGBT, High speed IGBT; 低VCE （ SAT ）的IGBT ，高速IGBT
| 型号： | IXGM30N60A |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Low VCE(sat) IGBT, High speed IGBT |
| 文件： | 总2页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VCES
600 V 50 A 2.5 V
IXGH/IXGM 30 N60A 600 V 50 A 3.0 V
IC25 VCE(sat)
Low VCE(sat) IGBT
High speed IGBT
IXGH/IXGM 30 N60
Symbol
TestConditions
Maximum Ratings
TO-247 AD (IXGH)
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
C
E
IC25
IC90
ICM
TC = 25°C
50
30
A
A
A
TO-204 AE (IXGM)
TC = 90°C
TC = 25°C, 1 ms
100
SSOA
VGE= 15 V, TVJ = 125°C, RG = 33 Ω
ICM = 60
A
(RBSOA)
Clamped inductive load, L = 100 µH
@ 0.8 VCES
PC
TC = 25°C
200
W
C
TJ
-55 ... +150
150
°C
°C
°C
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
TJM
Tstg
-55 ... +150
Md
Mounting torque (M3)
1.13/10 Nm/lb.in.
Features
l
International standard packages
2nd generation HDMOSTM process
Low VCE(sat)
- for low on-state conduction losses
High current handling capability
MOS Gate turn-on
Weight
TO-204 = 18 g, TO-247 = 6 g
l
l
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
l
l
- drive simplicity
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Voltage rating guaranteed at high
temperature (125°C)
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
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BVCES
VGE(th)
IC = 250 µA, VGE = 0 V
IC = 250 µA, VCE = VGE
600
2.5
V
V
l
l
l
l
5
ICES
VCE = 0.8 • VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
200 µA
mA
1
IGES
VCE = 0 V, VGE = ±20 V
±100 nA
Advantages
Easy to mount with 1 screw (TO-247)
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VCE(sat)
IC = IC90, VGE = 15 V
30N60
30N60A
2.5
3.0
V
V
(isolated mounting screw hole)
High power density
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91512E (3/96)
© 1996 IXYS All rights reserved
IXGH 30N60 IXGM 30N60
IXGH 30N60A IXGM 30N60A
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
TO-247 AD Outline
min. typ. max.
IC = IC90; VCE = 10 V,
8
16
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Cres
2800
230
70
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
150
35
180 nC
50 nC
90 nC
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
60
Inductive load, TJ = 25°C
td(on)
tri
td(off)
tfi
100
200
500
200
2
ns
ns
1 = Gate
IC = IC90, VGE = 15 V, L = 300 µH
VCE = 0.8 VCES, RG = Roff = 33 Ω
Switching times may increase
for VCE (Clamp) > 0.8 • VCES
higher TJ or increased RG
2 = Collector
3 = Emitter
Tab = Collector
ns
,
30N60A
30N60A
ns
Eoff
mJ
Inductive load, TJ = 125°C
td(on)
tri
100
200
3
ns
ns
IC = IC90, VGE = 15 V,
L = 300 µH
Eon
td(off)
tfi
mJ
VCE = 0.8 VCES
,
600 1000 ns
500 1500 ns
250
RG = Roff = 33 Ω
30N60
30N60A
Remarks: Switching times
may increase for VCE
(Clamp) > 0.8 • VCES, higher
TJ or increased RG
800 ns
Eoff
30N60
30N60A
5.5
4.0
mJ
mJ
TO-204AE Outline
RthJC
RthCK
0.62 K/W
K/W
0.25
IXGH 30N60 and IXGH 30N60A characteristic curves are located on the
IXGH 30N60U1 and IXGH 30N60AU1 data sheets.
1 = Gate
2 = Emitter
Case = Collector
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
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