IXGP14N120B [IXYS]
IGBT Optimized for switching up to 35 KHz; IGBT的优化切换高达35千赫型号: | IXGP14N120B |
厂家: | IXYS CORPORATION |
描述: | IGBT Optimized for switching up to 35 KHz |
文件: | 总5页 (文件大小:150K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IXGA 14N120B
IXGP 14N120B
VCES
IC25
= 1200 V
28 A
IGBT
=
Optimized for
VCE(sat) = 3.3 V
switching up to 35 KHz
Preliminary data sheet
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
1200
1200
V
V
TO-220AB(IXGP)
TJ = 25°C to 150°C; RGE = 1 MΩ
VGES
VGEM
Continuous
Transient
20
30
V
V
G
C
E
IC25
IC110
ICM
TC = 25°C
TC = 110°C
28
14
56
A
A
A
TC = 25°C, 1 ms
TO-263AA(IXGA)
SSOA
VGE = 15 V, TVJ = 125°C, RG = 100 Ω
ICM = 28
A
(RBSOA)
Clamped inductive load
@ 0.8 VCES
G
C (TAB)
E
PC
TC = 25°C
150
W
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
-55 ... +150
Features
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
•International standard packages
•LJEowDEVCCET(saOt) -220AB and TO-263AA
- for minimum on-state conduction
losses
Md
Mounting torque with screw M3
Mounting torque with screw M3.5
0.45/4 Nm/lb.in.
0.55/5 Nm/lb.in.
Weight
TO-220
TO-263
4
2
g
g
•MOS Gate turn-on
- drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min.
Typ.
Max.
• Uninterruptible power supplies (UPS)
• Switch-mode and resonant-mode
VGE(th)
ICES
IC = 250 µA, VCE = VGE
3.0
5.0
V
• Cpoawpaecritsourpdpilsiecsharge
VCE = VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
25
µA
µA
250
Advantages
IGES
VCE = 0 V, VGE = 20 V
IC = IC90, VGE = 15V
100
3.3
nA
V
• Easy to mount with one screw
• Reduces assembly time and cost
• High power density
VCE(sat)
2.7
© 2005 IXYS All rights reserved
DS99382(04/05)
IXGA 14N120B
IXGP 14N120B
TO-220 AB Dimensions
Symbol
TestConditions
Characteristic Values
Min. Typ. Max.
(TJ = 25°C, unless otherwise specified)
gfs
IC = IC110 VCE = 10 V
5.0
9.0
S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
IC(on)
VGE = 10 V, VCE = 10V
35
A
Cies
Coes
Cres
535
36
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
pF
pF
14
Qg
30
6.0
12
nC
nC
nC
Qge
Qgc
IC = IC110, VGE = 15 V, VCE = 0.5 VCES
Pins: 1 - Gate
3 - Emitter
2 - Collector
4 - Collector
Bottom Side
Inductive load, TJ = 25°C
IC =IC110 , VGE = 15 V
td(on)
tri
td(off)
tfi
15
ns
ns
ns
ns
mJ
30
VCE = 960 V, RG = Roff = 120 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES
higher TJ or increased RG
500 750
330 500
,
Eoff
2.6
4.0
td(on)
tri
15
30
ns
ns
Inductive load, TJ = 125°C
IC = IC110 , VGE = 15 V
Eon
td(off)
tfi
0.8
mJ
ns
VCE = 960 V, RG = Roff = 120 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 VCES
higher TJ or increased RG
610
600
4.85
ns
,
TO-263AAOutline
Eoff
mJ
RthJC
RthCK
0.83 K/W
K/W
TO-220
0.5
1. Gate
2. Collector
3. Emitter
4. Collector
BottomSide
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
Min.RecommendedFootprint
(Dimensions in inches and mm)
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
L
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
L1
L2
L3
L4
R
0.46
0.74
.018
.029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
oneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
IXGA 14N120B
IXGP 14N120B
Fig. 1. Output Characteristics
@ 25
Fig. 2. Extended Output Characteristics
º
C
º
@ 25 C
80
70
60
50
40
30
20
10
0
28
24
20
16
12
8
VGE = 15V
VGE = 15V
13V
11V
13V
11V
9V
9V
7V
4
7V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
-50
4
2
4
6
8
10 12 14 16 18 20
VC E - Volts
VC E - Volts
Fig. 3. Output Characteristics
@ 125
Fig. 4. Dependence of VCE (sat) on
Temperature
º
C
28
24
20
16
12
8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VGE = 15V
13V
VGE = 15V
11V
IC = 28A
9V
7V
IC = 14A
IC = 7A
4
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-25
0
25
50
75
100 125 150
VC E - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter voltage
Fig. 6. Input Admittance
7
20
18
16
14
12
10
8
TJ = 25ºC
6
5
4
3
2
IC = 28A
14A
7A
6
TJ = 125ºC
25ºC
4
-40ºC
2
0
4.5
5
5.5
6
6.5
7
7.5
8
8.5
6
7
8
9
10
11
12
13
14
15
VG E - Volts
VG E - Volts
© 2005 IXYS All rights reserved
IXGA 14N120B
IXGP 14N120B
Fig. 8. Dependence of Turn-Off
Fig. 7. Transconductance
Ene r gy on R G
16
14
12
10
8
11
10
9
IC = 28A
TJ = -40ºC
25ºC
8
125ºC
7
TJ = 125ºC
VGE = 15V
VCE = 960V
6
5
IC = 14A
6
4
3
4
2
2
1
IC = 7A
100 150 200 250 300 350 400 450 500
0
0
0
2
4
6
8
10 12 14 16 18 20
R
- Ohms
I C - Amperes
G
Fig. 9. Dependence of Turn-Off
Ene r gy on I C
Fig. 10. Dependence of Turn-Off
Energy on Temperature
11
11
10
9
10
9
8
7
6
5
4
3
2
1
0
RG = 120Ω
TJ = 125ºC
VGE = 15V
IC = 28A
VCE = 960V
8
7
6
RG = 120Ω
VGE = 15V
IC = 14A
VCE = 960V
5
TJ = 25ºC
4
3
2
1
IC = 7A
0
6
8
10 12 14 16 18 20 22 24 26 28
25 35 45 55 65 75 85 95 105 115 125
I C - Amperes
T - Degrees Centigrade
J
Fig. 12. Dependence of Turn-Off
Switching Time on I C
Fig. 11. Dependence of Turn-Off
Switching Time on R G
1000
900
800
700
600
500
400
300
200
100
2000
1800
1600
1400
1200
1000
800
td(off)
td(off)
, tfi - - - - -
G = 120Ω, VGE = 15V
VCE = 960V
R
tfi
-
- - - -
TJ = 125ºC
VGE = 15V
VCE = 960V
TJ = 125ºC
IC = 7A
14A
28A
14A
TJ = 25ºC
7A
600
400
200
100 150 200 250 300 350 400 450 500
6
8
10
12
14 16
18
20
22
24
R
- Ohms
I C - Amperes
G
IXons.
IXGA 14N120B
IXGP 14N120B
Fig. 14. Reverse-Bias
Safe Operating Area
Fig. 13. Dependence of Turn-Off
Switching Time on Temperature
1100
1000
900
800
700
600
500
400
300
200
100
30
27
24
21
18
15
12
9
td(off)
t -
fi
- - - -
IC = 28A
14A
RG = 120Ω
VGE = 15V
VCE = 960V
7A
º
TJ = 125 C
G = 120Ω
dV/dT < 10V/ns
6
R
IC = 7A
14A
3
28A
0
100
200
300
400
500
600
25 35 45 55 65 75 85 95 105 115 125
T - Degrees Centigrade
J
V
C E - Volts
Fig. 15. Gate Charge
Fig. 16. Capacitance
1000
100
10
16
14
12
10
8
f = 1 MHz
VCE = 600V
I
I
C = 14A
G = 10mA
C
ies
6
C
oes
4
C
res
2
0
0
5
10
15
20
25
30
35
40
0
3
6
9
12 15 18 21 24 27 30
Q G - nanoCoulombs
VCE - Volts
Fig. 17. Maximum Transient Thermal Resistance
1
0.1
0.1
1
10
100
1000
Pulse Width - milliseconds
© 2005 IXYS All rights reserved
相关型号:
IXGP15N120B2
Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN
IXYS
IXGP20N100A3
Insulated Gate Bipolar Transistor, 40A I(C), 1000V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN
IXYS
©2020 ICPDF网 联系我们和版权申明