IXGP16N60B2 [IXYS]
HiPerFAST IGBTs B2-Class High Speed; HiPerFAST IGBT的B2级高速![IXGP16N60B2](http://pdffile.icpdf.com/pdf1/p00176/img/icpdf/IXGP1_989332_icpdf.jpg)
型号: | IXGP16N60B2 |
厂家: | ![]() |
描述: | HiPerFAST IGBTs B2-Class High Speed |
文件: | 总6页 (文件大小:222K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
HiPerFASTTM IGBTs
B2-Class High Speed
VCES = 600V
IC110 = 16A
VCE(sat) ≤ 2.3V
tfi(typ) = 70ns
IXGA16N60B2
IXGP16N60B2
TO-263 AA (IXGA)
G
E
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
600
600
V
V
C (Tab)
VGES
VGEM
Continuous
Transient
±20
±30
V
V
TO-220AB (IXGP)
IC25
IC110
ICM
TC = 25°C
TC = 110°C
TC = 25°C, 1ms
40
16
A
A
A
100
G
C
C (Tab)
SSOA
VGE= 15V, TJ = 125°C, RG = 22Ω
ICM = 32
A
E
(RBSOA)
Clamped Inductive load
VCE ≤ VCES
PC
TC = 25°C
150
W
G = Gate
C
= Collector
E = Emitter
Tab = Collector
TJ
TJM
Tstg
-55 ... +150
150
°C
°C
°C
-55 ... +150
Features
Md
FC
Mounting Torque (TO-220)
Mounting Force (TO-263)
1.13/10
10..65 / 2.2..14.6
Nm/lb.in.
N/lb.
z
Optimized for Low Conduction and
Switching Losses
Square RBSOA
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6mm (0.062 in.) from Case for 10s
300
260
°C
°C
z
z
International Standard Packages
Weight
TO-263
TO-220
2.5
3.0
g
g
Advantages
z
High Power Density
Low Gate Drive Requirement
z
Applications
z
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
z
Symbol
Test Conditions
Characteristic Values
z
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
z
VGE(th)
ICES
IC = 250μA, VCE = VGE
3.0
5.5
V
z
z
VCE = VCES,VGE = 0V
15 μA
z
TJ = 125°C
TJ = 125°C
250 μA
z
IGES
VCE = 0V, VGE = ±20V
±100 nA
VCE(sat)
IC = 12A, VGE = 15V, Note1
2.30
V
V
1.65
DS99141B(08/10)
© 2010 IXYS CORPORATION, All Rights Reserved
IXGA16N60B2
IXGP16N60B2
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
TO-263 (IXGA) Outline
gfs
IC = 12A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
8
S
Cies
Coes
Cres
675
60
pF
pF
pF
20
Qg(on)
Qge
24
5
nC
nC
nC
IC = 12A, VGE = 15V, VCE = 0.5 • VCES
Qgc
13
1 = Gate
2 = Collector
3 = Emitter
4 = Collector
td(on)
tri
Eon
td(off)
18
ns
Inductive load, TJ = 25°C
IC = 12A, VGE = 15V
20
0.16
73
ns
mJ
ns
VCE = 400V, RG = 22Ω
tfi
70
ns
Note 2
Eoff
0.12
0.22 mJ
td(on)
tri
Eon
17
ns
Inductive load, TJ = 125°C
IC = 12A, VGE = 15V
20
0.26
ns
mJ
td(off)
tfi
Eoff
140
125
ns
ns
VCE = 400V, RG = 22Ω
Note 2
0.38
mJ
RthJC
RthCK
0.83 °C/W
°C/W
TO-220
0.50
TO-220 (IXGP) Outline
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
1 = Gate 2 = Collector
3 = Emitter
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXGA16N60B2
IXGP16N60B2
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
24
20
16
12
8
100
90
80
70
60
50
40
30
20
10
0
VGE = 15V
13V
VGE = 15V
11V
12V
14V
13V
12V
10V
9V
11V
10V
4
8V
7V
9V
8V
0
0
0
8
0.5
1
1.5
2
2.5
3
0
5
10
15
20
25
30
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
24
20
16
12
8
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VGE = 15V
13V
VGE = 15V
11V
12V
I C = 24A
10V
I C = 12A
9V
8V
4
I C = 6A
7V
6V
0
0.5
1
1.5
2
2.5
3
0
25
50
75
100
125
150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
35
30
25
20
15
10
5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
TJ = 25ºC
TJ = - 40ºC
25ºC
I C = 24A
125ºC
12A
6A
0
9
10
11
12
13
14
15
4
5
6
7
8
9
10
11
12
VGE - Volts
VGE - Volts
© 2010 IXYS CORPORATION, All Rights Reserved
IXGA16N60B2
IXGP16N60B2
Fig. 8. Gate Charge
Fig. 7. Transconductance
18
16
14
12
10
8
16
14
12
10
8
TJ = - 40ºC
VCE = 300V
I C = 12A
I
G = 10mA
25ºC
125ºC
6
6
4
4
2
2
0
0
0
5
10
15
20
25
0
5
10
15
20
25
30
35
QG - NanoCoulombs
IC - Amperes
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
35
30
25
20
15
10
5
10,000
1,000
100
= 1 MHz
f
C
ies
C
oes
TJ = 125ºC
RG = 22
Ω
dv / dt < 10V / ns
C
res
0
10
100
150
200
250
300
350
400
450
500
550
600
650
0
5
10
15
20
25
30
35
40
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA16N60B2
IXGP16N60B2
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
E
E
on - - - -
VGE = 15V
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
off
RG = 22
E
E
on - - - -
off
TJ = 125ºC , VGE = 15V
Ω ,
CE = 400V
V
VCE = 400V
I C = 24A
TJ = 125ºC
TJ = 25ºC
I C = 12A
12
13
14
15
16
17
18
19
20
21
22
23
24
20
30
40
50
60
70
80
90
100
RG - Ohms
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
190
180
170
160
150
140
130
120
110
100
330
1
1
E
E
on - - - -
t f i
td(off)
- - - -
off
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
300
270
240
210
180
150
120
90
RG = 22
Ω ,
VGE = 15V
TJ = 125ºC, GE = 15V
V
VCE = 400V
CE = 400V
V
I C = 24A
I C = 24A
I C = 12A
I C = 12A
60
20
30
40
50
60
70
80
90
100
25
35
45
55
65
75
85
95
105
115
125
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
180
160
140
120
100
80
180
160
140
120
100
80
200
180
160
140
120
100
80
200
180
160
140
120
100
80
t f i
td(off) - - - -
tf i
td(on)
- - - -
RG = 22
,
VGE = 15V
RG = 22
, VGE = 15V
Ω
Ω
VCE = 400V
VCE = 400V
I C = 24A, 12A
TJ = 125ºC
60
60
TJ = 25ºC
60
60
40
40
40
40
25
35
45
55
65
75
85
95
105
115
125
12
13
14
15
16
17
18
19
20
21
22
23
24
TJ - Degrees Centigrade
IC - Amperes
© 2010 IXYS CORPORATION, All Rights Reserved
IXGA16N60B2
IXGP16N60B2
Fig. 19. Inductive Turn-on Switching Times vs.
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
Collector Current
td(on)
- - - -
55
50
45
40
35
30
25
20
15
23
22
21
20
19
18
17
16
15
90
80
70
60
50
40
30
20
10
0
55
50
45
40
35
30
25
20
15
10
t r i
tr i
td(on)
- - - -
Ω
RG = 22 , VGE = 15V
TJ = 125ºC, VGE = 15V
VCE = 400V
VCE = 400V
TJ = 25ºC, 125ºC
I C = 24A
I C = 12A
12
13
14
15
16
17
18
19
20
21
22
23
24
20
30
40
50
60
70
80
90
100
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
60
55
50
45
40
35
30
25
20
15
10
24
23
22
21
20
19
18
17
16
15
14
tr i
td(on)
- - - -
RG = 22
, VGE = 15V
Ω
VCE = 400V
I C = 24A
I C = 12A
105
25
35
45
55
65
75
85
95
115
125
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXG_16N60B3D1(3D)8-02-10
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