IXGP16N60B2D1 [IXYS]
HiPerFAST IGBTs B2-Class High Speed w/ Diode; HiPerFAST IGBT的B2级高速瓦特/二极管
| 型号： | IXGP16N60B2D1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFAST IGBTs B2-Class High Speed w/ Diode |
| 文件： | 总7页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFASTTM IGBTs
B2-Class High Speed
w/ Diode
VCES = 600V
IC110 = 16A
VCE(sat) ≤ 2.3V
tfi(typ) = 70ns
IXGA16N60B2D1
IXGP16N60B2D1
IXGH16N60B2D1
TO-263 AA (IXGA)
G
E
C (Tab)
Symbol
Test Conditions
Maximum Ratings
TO-220AB (IXGP)
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
600
600
V
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
G
C
C (Tab)
E
IC25
TC = 25°C
40
A
IC110
IF110
TC = 110°C
TC = 110°C
16
11
A
A
TO-247 (IXGH)
ICM
TC = 25°C, 1ms
100
A
SSOA
VGE= 15V, TJ = 125°C, RG = 22Ω
ICM = 32
A
(RBSOA)
Clamped Inductive load
VCE ≤ VCES
G
PC
TC = 25°C
150
W
C
C (Tab)
E
TJ
TJM
Tstg
-55 ... +150
150
°C
°C
°C
G = Gate
E = Emitter
C
= Collector
Tab = Collector
-55 ... +150
Md
FC
Mounting Torque (TO-220 & TO-247)
Mounting Force (TO-263)
1.13/10
10..65 / 2.2..14.6
Nm/lb.in.
N/lb.
Features
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6mm (0.062 in.) from Case for 10s
300
260
°C
°C
z
Optimized for Low Conduction and
Switching Losses
Square RBSOA
Anti-Parallel Ultra Fast Diode
International Standard Packages
z
z
z
Weight
TO-263
TO-220
TO-247
2.5
3.0
6.0
g
g
g
Advantages
z
High Power Density
Low Gate Drive Requirement
z
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
Applications
VGE(th)
ICES
IC = 250μA, VCE = VGE
3.0
5.5
V
z
Power Inverters
UPS
VCE = VCES,VGE = 0V
25 μA
1 mA
z
TJ = 125°C
TJ = 125°C
z
z
z
z
z
z
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
IGES
VCE = 0V, VGE = ±20V
±100 nA
VCE(sat)
IC = 12A, VGE = 15V, Note1
2.30
V
V
1.65
DS99178B(08/10)
© 2010 IXYS CORPORATION, All Rights Reserved
IXGA16N60B2D1 IXGP16N60B2D1
IXGH16N60B2D1
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
IC = 12A, VCE = 10V, Note 1
VCE = 25V, VGE = 0V, f = 1MHz
8
S
Cies
Coes
Cres
675
70
pF
pF
pF
20
Qg(on)
Qge
24
5
nC
nC
nC
IC = 12A, VGE = 15V, VCE = 0.5 • VCES
Qgc
13
td(on)
tri
Eon
td(off)
18
ns
Inductive load, TJ = 25°C
IC = 12A, VGE = 15V
20
0.16
73
ns
mJ
ns
VCE = 400V, RG = 22Ω
tfi
70
ns
Note 2
Eoff
0.12
0.22 mJ
td(on)
tri
Eon
17
ns
Inductive load, TJ = 125°C
IC = 12A, VGE = 15V
20
0.26
ns
mJ
td(off)
tfi
Eoff
140
125
ns
ns
VCE = 400V, RG = 22Ω
Note 2
0.38
mJ
RthJC
RthCK
0.83 °C/W
TO-220
TO-247
0.50
0.21
°C/W
°C/W
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
VF
IF = 10A, VGE = 0V, Note 1
3.0
V
V
TJ = 125°C
1.7
2.5
IRM
A
IF = 12A, VGE = 0V,
-diF/dt = 100A/μs, VR = 100V, TJ = 125°C
IF = 1A, VGE = 0V, -diF/dt = 100A/μs, VR = 30V
trr
trr
110
30
ns
ns
RthJC
2.5 °C/W
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXGA16N60B2D1 IXGP16N60B2D1
IXGH16N60B2D1
TO-220 (IXGP) Outline
TO-247 (IXGH) AD Outline
TO-263 (IXGA) Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
Pins: 1 - Gate
3 - Emitter
2 - Collector
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
1 = Gate
2 = Collector
3 = Emitter
A
b
b2
4.06
0.51
1.14
4.83
0.99
1.40
.160
.020
.045
.190
.039
.055
c
c2
0.40
1.14
0.74
1.40
.016
.045
.029
.055
D
D1
8.64
8.00
9.65
8.89
.340
.280
.380
.320
E
9.65
10.41
.380
.405
E1
e
L
L1
L2
L3
L4
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
.270
.100 BSC
.320
.575
.090
.040
.050
0
.625
.110
.055
.070
.005
© 2010 IXYS CORPORATION, All Rights Reserved
IXGA16N60B2D1 IXGP16N60B2D1
IXGH16N60B2D1
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
24
20
16
12
8
100
VGE = 15V
13V
90
80
70
60
50
40
30
20
10
0
VGE = 15V
11V
12V
14V
13V
12V
10V
9V
11V
10V
4
8V
7V
9V
8V
0
0
0
8
0.5
1
1.5
2
2.5
3
0
5
10
15
20
25
30
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
24
20
16
12
8
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VGE = 15V
13V
VGE = 15V
11V
12V
I C = 24A
10V
I C = 12A
9V
8V
4
I C = 6A
7V
6V
0
0.5
1
1.5
2
2.5
3
0
25
50
75
100
125
150
VCE - Volts
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
35
30
25
20
15
10
5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
TJ = 25ºC
TJ = - 40ºC
25ºC
I C = 24A
125ºC
12A
6A
0
9
10
11
12
13
14
15
4
5
6
7
8
9
10
11
12
VGE - Volts
VGE - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA16N60B2D1 IXGP16N60B2D1
IXGH16N60B2D1
Fig. 8. Gate Charge
Fig. 7. Transconductance
18
16
14
12
10
8
16
14
12
10
8
TJ = - 40ºC
VCE = 300V
I C = 12A
I
G = 10mA
25ºC
125ºC
6
6
4
4
2
2
0
0
0
5
10
15
20
25
0
5
10
15
20
25
30
35
QG - NanoCoulombs
IC - Amperes
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
35
30
25
20
15
10
5
10,000
1,000
100
= 1 MHz
f
C
ies
C
oes
TJ = 125ºC
RG = 22
Ω
dv / dt < 10V / ns
C
res
0
10
100
150
200
250
300
350
400
450
500
550
600
650
0
5
10
15
20
25
30
35
40
VCE - Volts
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
1
0.1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2010 IXYS CORPORATION, All Rights Reserved
IXGA16N60B2D1 IXGP16N60B2D1
IXGH16N60B2D1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
1
1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
E
E
on - - - -
VGE = 15V
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
off
RG = 22
E
E
on - - - -
off
TJ = 125ºC , VGE = 15V
Ω ,
CE = 400V
V
VCE = 400V
I C = 24A
TJ = 125ºC
TJ = 25ºC
I C = 12A
12
13
14
15
16
17
18
19
20
21
22
23
24
20
30
40
50
60
70
80
90
100
RG - Ohms
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
190
180
170
160
150
140
130
120
110
100
330
1
1
E
E
on - - - -
t f i
td(off)
- - - -
off
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
300
270
240
210
180
150
120
90
RG = 22
Ω ,
VGE = 15V
TJ = 125ºC, GE = 15V
V
VCE = 400V
CE = 400V
V
I C = 24A
I C = 24A
I C = 12A
I C = 12A
60
20
30
40
50
60
70
80
90
100
25
35
45
55
65
75
85
95
105
115
125
RG - Ohms
TJ - Degrees Centigrade
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
180
160
140
120
100
80
180
160
140
120
100
80
200
180
160
140
120
100
80
200
180
160
140
120
100
80
t f i
td(off) - - - -
tf i
td(on)
- - - -
RG = 22
,
VGE = 15V
RG = 22
, VGE = 15V
Ω
Ω
VCE = 400V
VCE = 400V
I C = 24A, 12A
TJ = 125ºC
60
60
TJ = 25ºC
60
60
40
40
40
40
25
35
45
55
65
75
85
95
105
115
125
12
13
14
15
16
17
18
19
20
21
22
23
24
TJ - Degrees Centigrade
IC - Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXGA16N60B2D1 IXGP16N60B2D1
IXGH16N60B2D1
Fig. 19. Inductive Turn-on Switching Times vs.
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
Collector Current
55
50
45
40
35
30
25
20
15
23
90
80
70
60
50
40
30
20
10
0
55
50
45
40
35
30
25
20
15
10
t r i
td(on)
- - - -
Ω
, VGE = 15V
tr i
td(on)
- - - -
22
21
20
19
18
17
16
15
RG = 22
TJ = 125ºC, VGE = 15V
VCE = 400V
VCE = 400V
TJ = 25ºC, 125ºC
I C = 24A
I C = 12A
12
13
14
15
16
17
18
19
20
21
22
23
24
20
30
40
50
60
70
80
90
100
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
60
55
50
45
40
35
30
25
20
15
10
24
23
22
21
20
19
18
17
16
15
14
tr i
td(on)
- - - -
RG = 22
, VGE = 15V
Ω
VCE = 400V
I C = 24A
I C = 12A
105
25
35
45
55
65
75
85
95
115
125
TJ - Degrees Centigrade
© 2010 IXYS CORPORATION, All Rights Reserved
IXYS REF: IXG_16N60B3D1(3D)8-02-10
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