IXGR39N60BD1 [IXYS]
Insulated Gate Bipolar Transistor, 66A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN;
| 型号： | IXGR39N60BD1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 66A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN 电动机控制 栅 晶体管 |
| 文件： | 总2页 (文件大小：514K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFASTTM IGBT
VCES = 600 V
IC25 = 66 A
VCE(sat) = 1.8 V
tfi(typ) = 200 ns
IXGR 39N60B
IXGR 39N60BD1
ISOPLUS247TM
(Electrically Isolated Backside)
Preliminary data sheet
(D1)
Symbol
TestConditions
Maximum Ratings
ISOPLUS 247
E153432
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
600
600
V
V
VGES
VGEM
Continuous
Transient
20
30
V
V
G
C
E
Isolated Backside*
IC25
IC110
ICM
TC = 25°C
TC = 110°C
TC = 25°C, 1 ms
66
35
152
A
A
A
G = Gate,
E=Emitter
C = Collector
SSOA
V
= 15 V, T = 125°C, RG = 10 Ω
I
= 76
A
(RBSOA)
CGlaE mped indVuJctive load, L = 100 µH
@ 0C.8M VCES
* Patent pending
PC
TC = 25°C
140
W
VISOL
50/60 Hz RMS t = 1 minute
2500
V
Features
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
z
DCB Isolated mounting tab
z
z
z
z
Meets TO-247AD package Outline
High current handling capability
Latest generation HDMOSTM process
MOS Gate turn-on
- drive simplicity
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Weight
Symbol
5
g
Applications
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
z
Uninterruptible power supplies (UPS)
Min. Typ. Max.
z
Switched-mode and resonant-mode
BVCES
VGE(th)
ICES
I
= 250 µA, VGE = 0 V
39N60B
600
600
V
ICC = 750 µA
39N60BD1
power supplies
z
AC motor speed control
z
I
= 250 µA, VCE = VGE
39N60B
2.5
5.0
5.0
V
V
DC servo and robot drives
DC choppers
ICC = 500 µA
39N60BD1 2.5
z
VCE = 0.8 • VCES TJ = 25°C
VGE = 0 V; note 1 TJ = 25°C
TJ = 125°C
39N60B
200 µA
650 µA
39N60BD1
39N60B
Advantages
1
3
mA
mA
TJ = 125°C
39N60BD1
z Easy assembly
z
High power density
Very fast switching speeds for high
frequency applications
IGES
VCE = 0 V, VGE = 20 V
100 nA
1.8
z
VCE(sat)
IC = IT, VGE = 15 V
V
© 2004 IXYS All rights reserved
DS98738B(01/04)
IXGR 39N60B
IXGR 39N60BD1
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS247OUTLINE
gfs
IC = IT; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
19
S
Cies
2750
200
pF
pF
pF
39N60B
Coes
Cres
VCE = 25 V, VGE = 0 V, f = 1 MHz 39N60BD1 250
50
pF
Qg
125
nC
nC
nC
Qge
Qgc
IC = IT, VGE = 15 V, VCE = 0.5 VCES
25
40
1 Gate, 2 Drain (Collector)
3 Source (Emitter)
td(on)
tri
td(off)
tfi
25
ns
ns
ns
ns
4 no connection
Inductive load, TJ = 25°C
30
IC = IT, VGE = 15 V
Dim.
Millimeter
Inches
250 500
200 360
Min.
Max. Min. Max.
VCE = 0.8 • VCES, RG = Roff = 4.7 Ω
A
4.83
2.29
1.91
1.14
1.91
2.92
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
Remarks: Switching times may increase
for V (Clamp) > 0.8 • VCES, higher TJ or
increCaEsed RG
A
A12
Eoff
4.0
6.0 mJ
b
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
b
b12
td(on)
tri
25
30
ns
ns
C
D
E
0.61
0.80
.024 .031
.819 .840
.620 .635
Inductive load, TJ = 125°C
20.80 21.34
15.75 16.13
IC = IT, VGE = 15 V
Eon
td(off)
tfi
39N60B
0.3
mJ
mJ
ns
e
5.45 BSC
.215 BSC
.780 .800
.150 .170
VCE = 0.8 • VCES, RG = Roff = 4.7 Ω
39N60BD1 1.0
L
19.81 20.32
L1
3.81
4.32
Remarks: Switching times may increase
for V (Clamp) > 0.8 • VCES, higher TJ or
increCaEsed RG
360
350
6.0
Q
5.59
6.20
.220 .244
R
4.32
4.83
.170 .190
ns
Eoff
mJ
Please see IXGH 39N60B data
sheet for characteristic curves.
RthJC
RthCK
0.9 K/W
K/W
0.15
ReverseDiode(FRED)(IXGR39N60BD1only)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
VF
TestConditions
min. typ. max.
IF = 30A, VGE = 0 V,
Note 1
TJ = 150°C
1.6
2.5
V
V
IRM
I = 50A, VGE = 0 V, VR = 100 V TJ = 100°C
-FdiF/dt = 100 A/µs
2.5
175
25
A
ns
ns
trr
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V
RthJC
1.1 K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
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Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN
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IXGR40N60BD1
Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN
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