IXGR50N60A2U1 [IXYS]
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN;
| 型号： | IXGR50N60A2U1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN 栅 功率控制 晶体管 |
| 文件： | 总6页 (文件大小：143K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
VCES
IC25
VCE(sat)
= 600 V
= 75 A
= 1.7 V
IXGR 50N60A2U1
IGBT with Diode
Low Saturation Voltage IGBT with
Low Forward Drop Diode
Electrically Isolated Mounting Tab
PreliminaryDataSheet
Symbol
TestConditions
Maximum Ratings
ISOPLUS247(IXGR)
E153432
VCES
VCGR
TJ = 25°C to 150°C
600
600
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ
VGES
VGEM
Continuous
Transient
20
30
V
V
C
E
ISOLATEDTAB
IC25
IC110
IF110
ICM
TC = 25°C (limited by leads)
TC = 110°C
75
50
A
A
A
A
G = Gate
E = Emitter
C = Collector
TC = 110°C (50N60A2U1 Diode)
TC = 25°C, 1 ms
25
200
Features
• Low on-state voltage IGBT and
anti-parallel diode in one package
• High current handling capability
SSOA
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load @ VCE ≤ 600 V
ICM = 80
A
(RBSOA)
• MOS Gate turn-on for drive simplicity
PC
TC = 25°C
200
W
TJ
-55 ... +150
150
°C
°C
°C
Applications
TJM
Tstg
• Lighting controls
• Heating controls
• AC/DC relays
-55 ... +150
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
FC
Mounting Force
22..130/5..29
N/lb
Advantages
VISOL
50/60 Hz, RMS, t = 1 minute
ISOL = 1mA, t = 1 s
2500
3000
V~
V~
• Space savings (two devices in one
package)
• Easy to mount with 1 screw or spring
Weight
4
g
clip
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°C
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
VGE(th)
ICES
IC = 250 µA, VCE = VGE
3.0
5.0
V
VCE = VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
650
5
µA
mA
IGES
VCE = 0 V, VGE = 20 V
100
1.7
nA
VCE(sat)
IC = 50 A, VGE = 15 V
Note 1
V
V
TJ = 125°C
1.3
© 2005 IXYS All rights reserved
DS99343(03/05)
IXGR 50N60A2U1
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
ISOPLUS247 Outline
IC = 50 A; VCE = 10 V,
Note 1
40
55
S
Cies
Coes
Cres
3500
400
50
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
Qg
140
23
nC
nC
nC
Qge
Qgc
IC = 50 A, VGE = 15 V, VCE = 0.5 VCES
44
td(on)
tri
td(off)
tfi
20
25
ns
ns
ns
ns
mJ
Inductive load, TJ = 25°C
IC = 50 A, VGE = 15 V
410
260
3.5
VCE = 480 V, RG = Roff = 5.0 Ω
Eoff
td(on)
tri
20
25
ns
ns
Eon
td(off)
tfi
1.0
720
510
7.7
mJ
ns
Inductive load, TJ = 125°C
IC = 50 A, VGE = 15 V
ns
VCE = 480 V, RG = Roff = 5.0 Ω
Eoff
mJ
RthJC
RthCK
0.62 K/W
K/W
0.15
ReverseDiode(FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
VF
TestConditions
IF = 50 A, VGE = 0 V,
Note 1
1.6
V
RthJC
0.95 K/W
Note 1: Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered by
oneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728 B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2
6,710,463
6,727,585
6,759,692
6771478B2
IXGR 50N60A2U1
Fig. 1. Output Characteristics
@ 25
Fig. 2. Extended Output Characteristics
@ 25 ºC
ºC
300
250
200
150
100
50
100
90
80
70
60
50
40
30
20
10
0
V
= 15V
13V
V
=15V
13V
11V
GE
GE
11V
9V
9V
7V
7V
5V
5V
4
0
0
0
5
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
0
-50
4
0.5
1
1.5
2
2.5
3
VC E - Volts
3.5
4.5
5
VC E - Volts
Fig. 3. Output Characteristics
@ 125 ºC
Fig. 4. Dependence of VCE(sat) on
Temperature
100
90
80
70
60
50
40
30
20
10
0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
V
= 15V
13V
11V
V
= 15V
GE
GE
I
= 100A
C
9V
7V
I
= 50A
C
I
= 25A
C
5V
0.2 0.4 0.6 0.8
1
VCE - Volts
1.2 1.4 1.6 1.8
2
-25
0
25
50
TJ - Degrees Centigrade
75
100 125 150
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter voltage
Fig. 6. Input Admittance
250
225
200
175
150
125
100
75
3.5
3
T
J
= 25 C
º
I
= 100A
50A
25A
C
2.5
2
T = 125 C
º
J
25ºC
-40ºC
1.5
1
50
25
0
6
7
8
9
10 11 12 13 14 15 16 17
VG E - Volts
4.5
5
5.5
6
6.5
7
VG E - Volts
7.5
8
8.5
9
9.5
© 2005 IXYS All rights reserved
IXGR 50N60A2U1
Fig. 8. Dependence of Turn-off
Fig. 7. Transconductance
Energy Loss on RG
80
70
60
50
40
30
20
10
0
20
18
16
14
12
10
8
I
= 100A
C
T = 125 C
º
J
V
= 15V
GE
CE
V
= 400V
T = -40 C
º
J
25ºC
125 C
º
I
I
= 50A
C
C
6
4
= 25A
60
2
0
0
25
50
75 100 125 150 175 200 225
I C - Amperes
0
10
20
30 40
- Ohms
G
50
70
R
Fig. 9. Dependence of Turn-Off
Energy Loss on IC
Fig. 10. Dependence of Turn-off
Energy Loss on Temperature
18
16
14
12
10
8
20
18
16
14
12
10
8
= 5Ω
= 5Ω
R
R
G
G
I
= 100A
C
V
V
= 15V
V
V
= 15V
GE
CE
GE
T = 125ºC
J
= 400V
= 400V
CE
I
= 50A
C
6
6
T = 25 C
º
J
4
4
2
2
I
= 25A
C
0
0
25 35 45 55 65 75 85 95 105 115 125
T - Degrees Centigrade
20
30
40
50
60
I C - Amperes
70
80
90
100
J
Fig. 11. Dependence of Turn-off
Switching Time on RG
Fig. 12. Dependence of Turn-off
Switching Time on IC
1800
1600
1400
1200
1000
800
900
800
700
600
500
400
300
200
td(off)
td(off)
tfi
- - - - -
I
= 25A
50A
100A
C
tfi
- - - - - -
= 5Ω, V
R
= 15V
G
GE
T = 125ºC
J
V
CE
= 400V
V
= 15V
GE
CE
T = 125ºC
J
V
= 400V
25A < I < 100A
C
T = 25ºC
J
600
400
20
30
40
50
60
I C - Amperes
70
80
90
100
10
20
30
40
R G - Ohms
50
60
70
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGR 50N60A2U1
Fig. 13. Dependence of Turn-off
Switching Time on Temperature
Fig. 14. Gate Charge
1000
900
800
700
600
500
400
300
200
15
13.5
12
td(off)
V
= 300V
CE
tfi
- - - - - -
I
I
= 50A
C
G
I
= 25A
50A
R
= 5Ω
C
G
= 10mA
10.5
9
V
V
= 15V
GE
CE
100A
= 400V
7.5
6
4.5
3
I
= 50A
25A
C
1.5
0
I
= 10 0A
C
25 35 45 55 65 75 85 95 105 115 125
0
20
40
60
80
100
120
140
TJ - Degrees Centigrade
Q G - nanoCoulombs
Fig. 16. Reverse-Bias Safe
Operating Area
Fig. 15. Capacitance
10000
1000
100
160
f = 1 MHz
140
120
100
80
C
ies
C
oes
60
T = 125ºC
J
40
R
= 10Ω
G
C
dV/dT < 10V/ns
20
res
10
0
0
5
10
15
20
25
30
35
40
100 150 200 250 300 350 400 450 500 550 600
VC E - Volts
VC E - Volts
© 2005 IXYS All rights reserved
IXGR 50N60A2U1
Fig. 17. Maximum Transient Thermal Resistance
1
0.1
0.01
0.1
1
10
100
1000
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
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