IXGV25N250S [IXYS]
High Voltage IGBT For Capacitor Discharge Applications; 高电压IGBT电容器放电应用
| 型号： | IXGV25N250S |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Voltage IGBT For Capacitor Discharge Applications |
| 文件： | 总5页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
IXGH25N250
IXGT25N250
IXGV25N250S
VCES = 2500 V
IC25 = 60 A
VCE(sat)≤ 2.9 V
High Voltage IGBT
For Capacitor Discharge
Applications
TO-247 (IXGH)
Symbol
Test Conditions
Maximum Ratings
G
C
VCES
VCGR
TJ = 25°C to 150°C
2500
2500
V
AB)
E
TJ = 25°C to 150°C; RGE = 1 MΩ
V
VGES
VGEM
Continuous
Transient
± 20
± 30
V
V
TO-268 (IXGT)
IC25
IC110
ICM
TC = 25°C
60
25
A
A
A
G
E
TC = 110°C
C (TAB)
TC = 25°C, VGE = 20 V, 1 ms
200
SSOA
(RBSOA)
V
GE= 20 V, TJ = 125°C, RG = 20 Ω
ICM = 240
A
PLUS220SMD (IXGV...S)
Clamped inductive load @ 1250V
PC
TC = 25°C
250
W
TJ
-55 ... +150
150
°C
°C
°C
G
E
TJM
Tstg
C (TAB)
-55 ... +150
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
TL
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
°C
°C
TSOLD
Md
Mounting torque (TO-247)
1.13/10 Nm/lb-in
Features
ꢀ
Weight
TO-247
TO-268
6
4
g
g
High peak current capability
Low saturation voltage
MOS Gate turn-on
ꢀ
ꢀ
-drive simplicity
ꢀ
ꢀ
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Rugged NPT structure
Molding epoxies meet UL94V-0
flammability classification
Min. Typ. Max.
BVCES
VGE(th)
IC = 250 μA, VGE = 0 V
IC = 250 μA, VCE = VGE
2500
3.0
V
Applications
5.0
V
ꢀ
Capacitor discharge
ICES
VCE = 0.8 • VCES
VGE = 0 V
50
1
μA
mA
ꢀ
Pulser circuits
TJ = 125°C
IGES
VCE = 0 V, VGE = ±20 V
±100
nA
Advantages
VCE(sat)
IC = 25 A, VGE = 15 V
IC = 75 A
2.9
5.2
V
V
ꢀ
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
ꢀ
ꢀ
(isolated mounting screw hole)
© 2007 IXYS CORPORATION, All rights reserved
DS99760 (04/07)
IXGH25N250 IXGT25N250 IXGV25N250S
Symbol
Test Conditions
Characteristic Values
TO-247 (IXGH) Outline
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
gfs
IC = 50 A; VCE = 10 V, Note 1
VGE = 15V, VCE = 20V, Note 1
VCE = 25 V, VGE = 0 V, f = 1 MHz
16
26
S
A
∅ P
IC(ON)
240
1
2
3
Cies
Coes
Cres
2310
75
pF
pF
pF
23
Qg
IC = 50 A, VGE = 15 V, VCE = 0.5 VCES
75
15
30
nC
nC
nC
e
Qge
Qgc
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter) Tab - Drain (Collector)
Dim.
Millimeter
Inches
Resistive load
td(on)
tri
td(off)
tfi
68
233
209
200
ns
ns
ns
ns
Min. Max.
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
IC = 50 A, VGE = 15 V, Note 1
VCE = 1250 V, RG = 5 Ω
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
RthJC
RthCS
0.5 °C/W
°C/W
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
(TO-247)
0.25
e
5.20
5.72 0.205 0.225
Notes: 1. Pulse test, t ≤ 300 μs, duty cycle, d ≤ 2 %
2. Additional provisions for lead-to-lead voltage
isolation are required at VCE > 1200 V
L
L1
19.81 20.32
4.50
.780 .800
.177
∅P 3.55
Q
3.65
.140 .144
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
PLUS220SMD (IXGV_S) Outline
TO-268 (IXGT) Outline (D3-Pak)
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
Ref: IXYS CO 0052 RA
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXGH25N250 IXGT25N250 IXGV25N250S
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
250
150
135
120
105
90
V
= 25V
20V
GE
V
= 25V
20V
GE
225
200
175
150
125
100
75
15V
10V
15V
10V
75
60
45
30
50
15
25
0
0
0
1
2
3
4
5
6
7
8
0
-50
4
2
4
6
8
10
12
14
16
18
125
12
20
VCE - Volts
VCE - Volts
Fig. 3. Output Characteristics
@ 125ºC
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
2.4
2.2
2
200
180
160
140
120
100
80
V
= 25V
20V
GE
V
= 15V
GE
I
= 150A
C
1.8
1.6
1.4
1.2
1
15V
10V
I
= 100A
C
I
= 50A
C
60
40
0.8
0.6
0.4
20
0
0
2
4
6
8
10
12
14
16
-25
0
25
50
75
100
150
TJ - Degrees Centigrade
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
200
180
160
140
120
100
80
10
9
V
= 15V
GE
T
J
= - 40ºC
25ºC
125ºC
8
I
= 150A
C
7
6
I
= 100A
C
60
5
40
4
I
= 50A
15
C
20
3
0
7
8
9
10
11
12
13
14
16
17
5
6
7
8
9
10
11
13
VGE - Volts
VGE - Volts
© 2007 IXYS CORPORATION, All rights reserved
IXGH25N250 IXGT25N250 IXGV25N250S
Fig. 8. Resistive Turn-on Rise Time
Fig. 7. Transconductance
vs. Junction Temperature
36
33
30
27
24
21
18
15
12
9
680
640
600
560
520
480
440
400
360
320
280
240
200
R
V
V
= 5
Ω
G
I
= 150A
C
= 15V
GE
CE
= 1250V
T
J
= - 40ºC
25ºC
125ºC
I
= 50A
C
6
3
0
0
20
40
60
80
100 120 140 160 180 200
25
35
45
55
65
75
85
95
105 115 125
IC - Amperes
TJ - Degrees Centigrade
Fig. 9. Resistive Turn-on Rise Time
vs. Collector Current
Fig. 10. Resistive Turn-on Switching Times
vs. Gate Resistance
700
650
600
550
500
450
400
350
300
250
200
700
680
660
640
620
600
580
560
540
520
500
480
124
120
116
112
108
104
100
96
R
= 5
Ω
G
T = 125ºC
J
V
V
= 15V
= 1250V
GE
CE
I
= 150A
C
t r
td(on)
- - - -
T = 125ºC, V = 15V
J
GE
T = 25ºC
J
V
= 1250V
CE
92
88
I
= 50A
18
C
84
80
50
60
70
80
90
100 110 120 130 140 150
4
6
8
10
12
14
16
20
IC - Amperes
RG - Ohms
Fig. 12. Resistive Turn-off Switching Times
vs. Collector Current
Fig. 11. Resistive Turn-off Switching Times
vs. Junction Temperature
245
240
235
230
225
220
215
210
205
200
195
190
220
210
200
190
180
170
160
150
140
130
120
110
245
240
235
230
225
220
215
210
205
200
195
190
220
210
200
190
180
170
160
150
140
130
120
110
t f
R
td(off)
- - - -
= 5 , V = 15V
Ω
G
GE
V
= 1250V
t f
R
td(off)
- - - -
CE
= 5 , V = 15V
Ω
G
GE
V
= 1250V
I = 50A, 150A
C
CE
T = 25ºC
J
T = 125ºC
J
I
= 150A, 50A
C
50
60
70
80
90 100 110 120 130 140 150
25 35 45 55 65
75 85 95 105 115 125
IC - Amperes
TJ - Degrees Centigrade
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH25N250 IXGT25N250 IXGV25N250S
Fig. 13. Resistive Turn-off Switching Times
vs. Gate Resistance
Fig. 14. Gate Charge
260
255
250
245
240
235
230
225
220
215
210
205
200
280
265
250
235
220
205
190
175
160
145
130
115
100
16
14
12
10
8
t f
td(off) - - - -
V
= 1250V
CE
T = 125ºC, V = 15V
J
GE
I
I
= 50A
C
G
V
= 1250V
CE
= 10 mA
I
= 150A, 50A
C
6
4
2
0
0
10
20
30
40
50
60
70
80
4
6
8
10
12
14
16
18
20
QG - NanoCoulombs
RG - Ohms
Fig. 15. Reverse-Bias Safe Operating Area
Fig. 16. Capacitance
280
240
200
160
120
80
10000
1000
100
f = 1 MHz
C
C
C
ies
oes
res
T
= 125ºC
J
R
= 20
Ω
G
40
dV / dT < 10V / ns
10
0
0
5
10
15
20
25
30
35
40
250
500
750 1000 1250 1500 1750 2000 2250 2500
VCE - Volts
VCE - Volts
Fig. 17. Maximum Transient Thermal Impedance
1.00
0.10
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2007 IXYS CORPORATION, All rights reserved
IXYS REF: G_25N250 (5P-P528) 04-27-07-D.xls
相关型号：
IXGV32N170
Insulated Gate Bipolar Transistor, 75A I(C), 1700V V(BR)CES, N-Channel, PLASTIC, PLUS220SMD, 3 PIN
LITTELFUSE
©2020 ICPDF网 联系我们和版权申明