IXSN55N120 [IXYS]
High Voltage IGBT; 高压IGBT
| 型号： | IXSN55N120 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Voltage IGBT |
| 文件： | 总2页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VCES = 1200 V
HighVoltageIGBT
IXSN 55N120A
IC25
= 110 A
= 4 V
VCE(sat)
3
Short Circuit SOA Capability
2
Preliminary Data
4
miniBLOC, SOT-227 B
Symbol
TestConditions
MaximumRatings
1
VCES
VCGR
TJ = 25°C to 150°C
1200
1200
V
2
TJ = 25°C to 150°C; RGE = 1 MW
A
VGES
VGEM
Continuous
Transient
±20
±30
V
V
4
3
IC25
IC90
ICM
TC = 25°C
110
55
A
A
A
TC = 90°C
1 = Emitter
2 = Gate
3 = Collector
4 = Emitter
TC = 25°C, 1 ms
160
SSOA
(RBSOA)
VGE= 15 V, TVJ = 125°C, RG = 22 W
Clamped inductive load, L = 30 mH
ICM = 110
@ 0.8 VCES
A
ms
W
Either Emitter terminal can be used as Main or
Kelvin Emitter
tSC
(SCSOA)
VGE= 15 V, VCE = 0.6 VCES, TJ = 125°C
RG = 22 W, non-repetitive
10
Features
Internationalstandardpackage
miniBLOC
PC
TC = 25°C
IGBT
500
Aluminium-nitrideisolation
- highpowerdissipation
Isolation voltage 3000 V~
UL registered E 153432
Low VCE(sat)
VISOL
50/60 Hz
IISOL £ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
- forminimumon-stateconduction
losses
-55 ... +150
Md
Mountingtorque
Terminalconnectiontorque(M4)
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Low collector-to-case capacitance
(<100 pF)
- reduces RFI
Low package inductance (< 10 nH)
- easy to drive and to protect
Weight
30
g
Applications
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptiblepowersupplies(UPS)
Switch-modeandresonant-mode
powersupplies
BVCES
VGE(th)
IC = 6 mA, VGE = 0 V
IC = 8 mA, VCE = VGE
1200
4
V
8
1
V
ICES
VCE = 0.8 VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
mA
2.5 mA
Advantages
IGES
VCE = 0 V, VGE = ±20 V
±200
nA
V
Space savings
Easy to mount with 2 screws
High power density
VCE(sat)
IC = IC90, VGE = 15 V
4
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
95594B(6/97)
1 - 2
IXSN55N120A
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
miniBLOC, SOT-227 B
gfs
IC = IC90; VCE = 10 V
32
45
S
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IC(on)
VCE = 10 V, VGE = 15 V
340
A
Cies
Coes
Cres
8000
590
pF
pF
pF
VCE = 25 V, VGE = 0 V, f = 1 MHz
120
M4 screws (4x) supplied
Qg
300
80
nC
nC
nC
Dim.
Millimeter
Min. Max.
31.50 31.88 1.240 1.255
Inches
Min.
Max.
Qge
Qgc
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
A
B
7.80
8.20 0.307 0.323
140
C
D
4.09
4.09
4.29 0.161 0.169
4.29 0.161 0.169
td(on)
tri
td(off)
tfi
140
ns
ns
E
F
4.09
4.29 0.161 0.169
Inductive load, TJ = 25°C
14.91 15.11 0.587 0.595
220
G
H
30.12 30.30 1.186 1.193
38.00 38.23 1.496 1.505
IC = IC90, VGE = 15 V, VCE = 0.8 VCES, RG = 2.7 W
400
ns
J
K
11.68 12.22 0.460 0.481
Remarks: Switching times may increase for VCE
(Clamp) > 0.8 VCES, higher TJ or increased RG
700 1000
18
ns
8.92
9.60 0.351 0.378
L
M
0.76
0.84 0.030 0.033
Eoff
mJ
12.60 12.85 0.496 0.506
25.15 25.42 0.990 1.001
N
O
td(on)
tri
td(off)
tsi
140
250
600
900
950
6
ns
ns
1.98
2.13 0.078 0.084
P
Q
4.95
5.97 0.195 0.235
Inductive load, TJ = 125°C
26.54 26.90 1.045 1.059
R
S
3.94
4.72
4.42 0.155 0.174
4.85 0.186 0.191
ns
IC = IC90, VGE = 15 V, VCE = 0.8 VCES, RG = 2.7 W
ns
T
U
24.59 25.07 0.968 0.987
-0.05 0.1 -0.002 0.004
Remarks: Switching times may increase for VCE
(Clamp) > 0.8 VCES, higher TJ or increased RG
tc
ns
E(on)
Eoff
mJ
mJ
25
RthJC
RthCK
0.25 K/W
K/W
0.05
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 2
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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