IXSN62N60U1 [IXYS]

IGBT with Diode - Short Circuit SOA Capability; IGBT与二极管 - 短路SOA能力
IXSN62N60U1
型号: IXSN62N60U1
厂家: IXYS CORPORATION    IXYS CORPORATION
描述:

IGBT with Diode - Short Circuit SOA Capability
IGBT与二极管 - 短路SOA能力

二极管 双极性晶体管
文件: 总2页 (文件大小:72K)
下载:  下载PDF数据表文档文件

IXSN80N60A

High Current IGBT - Short Circuit SOA Capability

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35 IXYS

IXSN80N60AU1

IGBT with Diode - Short Circuit SOA Capability

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60 IXYS

IXSN80N60B

Insulated Gate Bipolar Transistor, 100A I(C), N-Channel, MINIBLOC-4

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0 IXYS

IXSN80N60BD1

IGBT with Diode Short Circuit SOA Capability

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39 IXYS

IXSP10N60B2D1

High Speed IGBT with Diode

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55 IXYS

IXSP15N120B

S Series - Improved SCSOA Capability

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32 IXYS

IXSP16N60

Low V CE(sat) IGBT - Short Circuit SOA Capability

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14 IXYS

IXSP20N60B2

Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN

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0 IXYS

IXSP20N60B2D1

Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, TO-263AB, TO-263, 3 PIN

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0 IXYS

IXSP24N60B

Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN

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0 IXYS

IXSP2N100

TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 3A I(C) | TO-220AB

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6 ETC

IXSP2N100A

TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 3A I(C) | TO-220AB

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19 ETC

IXSR35N120BD1

IGBT with Diode ISOPLUS 247 (Electrically Isolated Backside)

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15 IXYS

IXSR35N120BD1

Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN

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0 IXYS

IXSR40N60BD1

IGBT with Diode ISOPLUS 247 (Electrically Isolated Backside)

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28 IXYS