IXSN55N120A [IXYS]

High Voltage IGBT; 高压IGBT
IXSN55N120A
元器件型号: IXSN55N120A
生产厂家: IXYS CORPORATION    IXYS CORPORATION
描述和应用:

High Voltage IGBT
高压IGBT

双极性晶体管 高压
PDF文件: 总2页 (文件大小:74K)
下载文档:  下载PDF数据表文档文件
型号参数:IXSN55N120A参数

IXSN55N120AU1

High Voltage IGBT with Diode - Short Circuit SOA Capability

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35 IXYS

IXSN55N120AU1

Insulated Gate Bipolar Transistor, 110A I(C), 1200V V(BR)CES, N-Channel, MINIBLOC-4

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1 IXYS

IXSN55N120U1

TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 83A I(C) | SOT-227B

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14 ETC

IXSN62N60AU1

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 90A I(C) | SOT-227B

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18 ETC

IXSN62N60U1

IGBT with Diode - Short Circuit SOA Capability

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61 IXYS

IXSN80N60A

High Current IGBT - Short Circuit SOA Capability

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35 IXYS

IXSN80N60AU1

IGBT with Diode - Short Circuit SOA Capability

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60 IXYS

IXSN80N60B

Insulated Gate Bipolar Transistor, 100A I(C), N-Channel, MINIBLOC-4

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0 IXYS

IXSN80N60BD1

IGBT with Diode Short Circuit SOA Capability

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39 IXYS

IXSP10N60B2D1

High Speed IGBT with Diode

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55 IXYS

IXSP15N120B

S Series - Improved SCSOA Capability

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32 IXYS

IXSP16N60

Low V CE(sat) IGBT - Short Circuit SOA Capability

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14 IXYS

IXSP20N60B2

Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220AB, 3 PIN

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0 IXYS

IXSP20N60B2D1

Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, TO-263AB, TO-263, 3 PIN

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0 IXYS

IXSP24N60B

Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN

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0 IXYS