IXTA62N15P [IXYS]
PolarHT Power MOSFET; PolarHT功率MOSFET
| 型号： | IXTA62N15P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | PolarHT Power MOSFET |
| 文件： | 总5页 (文件大小：251K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarHTTM
Power MOSFET
IXTA 62N15P
IXTP 62N15P
IXTQ 62N15P
VDSS = 150 V
ID25 = 62 A
RDS(on) ≤ 40 mΩ
N-Channel Enhancement Mode
Avalanche Rated
TO-263 (IXTA)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25° C to 175° C
TJ = 25° C to 175° C; RGS = 1 MΩ
150
150
V
V
G
S
(TAB)
VGS
VGSM
Continuous
Transient
20
30
V
V
TO-220 (IXTP)
ID25
IDM
TC =25° C
TC = 25° C, pulse width limited by TJM
62
150
A
A
IAR
TC =25° C
50
A
(TAB)
G
D
EAR
EAS
TC =25° C
TC =25° C
30
mJ
J
S
1.0
TO-3P (IXTQ)
dv/dt
PD
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS
TJ ≤150° C, RG = 10 Ω
,
10
V/ns
TC =25° C
350
W
G
TJ
TJM
Tstg
-55 ... +175
175
-55 ... +150
°C
°C
°C
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
2600
°C
°C
Md
Mounting torque
(TO-3P / TO-220)
1.13/10 Nm/lb.in.
Weight
TO-3P
TO-220
TO-263
5.5
4
3
g
g
g
Features
l
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
Characteristic Values
(TJ = 25° C, unless otherwise specified)
Min. Typ.
Max.
l
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 250µA
VGS = 20 VDC, VDS = 0
150
V
V
3.0
5.5
100
nA
Advantages
l
IDSS
VDS = VDSS
VGS = 0 V
25
250
µA
µA
Easy to mount
Space savings
High power density
l
TJ = 150° C
l
RDS(on)
VGS = 10 V, ID = 0.5 ID25
33
40 mΩ
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
DS99154E(12/05)
© 2006 IXYS All rights reserved
IXTA 62N15P IXTP 62N15P
IXTQ 62N15P
Symbol
gfs
Test Conditions
Characteristic Values
TO-3P (IXTQ) Outline
(TJ = 25° C, unless otherwise specified)
Min.
Typ.
Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
14
24
S
Ciss
Coss
Crss
2250
660
pF
pF
pF
185
td(on)
tr
td(off)
tf
27
38
76
35
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 10 Ω (External)
Qg(on)
Qgs
70
20
38
nC
nC
nC
VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCS
0.42°C/W
(TO-3P)
(TO-220)
0.21
0.25
°C/W
°C/W
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0 V
Repetitive
62
A
A
V
ISM
150
1.5
TO-220 (IXTP) Outline
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤300 µs, duty cycle d≤ 2 %
trr
QRM
IF = 25 A, -di/dt = 100 A/µs
VR = 100 V, VGS = 0 V
150
2.0
ns
µC
TO-263 (IXTA) Outline
Pins: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
IXTA 62N15P IXTP 62N15P
IXTQ 62N15P
Fig. 1. Output Characteristics
Fig. 2. Extended Output Characteristics
@ 25
º
C
@ 25 C
º
110
100
90
80
70
60
50
40
30
20
10
0
V
GS
= 10V
60
50
40
30
20
10
0
V
GS
= 10V
9V
9V
8V
8V
7V
6V
7V
6V
0
2
4
6
8 10 12 14 16 18 20
VD S - Volts
0
0.5
1
1.5
2
2.5
3
3.5
VD S - Volts
Fig. 3. Output Characteristics
@ 150 C
º
Fig. 4. RDS(on Normalized to 0.5 ID25
)
Value vs. Junction Temperature
2.8
2.6
2.4
2.2
2
V
GS
= 10V
9V
60
50
40
30
20
10
0
V
GS
= 10V
8V
I
= 62A
D
1.8
1.6
1.4
1.2
1
7V
6V
I
= 31A
D
0.8
0.6
5V
4
0
1
2
3
5
6
7
-50 -25
0
25
50
TJ - Degrees Centigrade
75 100 125 150 175
VD S - Volts
Fig. 5. RDS(on) Normalized to
0.5 ID25 Value vs. ID
Fig. 6. Drain Current vs. Case
Temperature
4
3.5
3
70
60
50
40
30
20
10
0
T = 175ºC
J
2.5
2
V
GS
= 10V
V
GS
= 15V
1.5
1
T = 25ºC
J
0.5
-50 -25
0
25
50
TC - Degrees Centigrade
75 100 125 150 175
0
20
40
60
80 100 120 140 160 180
I D - Amperes
© 2006 IXYS All rights reserved
IXTA 62N15P IXTP 62N15P
IXTQ 62N15P
Fig. 8. Transconductance
Fig. 7. Input Admittance
36
32
28
24
20
16
12
8
120
105
90
75
60
45
30
15
0
T = -40ºC
J
25ºC
150ºC
T = 150ºC
J
25ºC
-40ºC
4
0
5
0.4
0
6
7
8
VG S - Volts
9
10
11
1.6
40
0
0
1
15 30 45 60 75 90 105 120 135 150
I D - Amperes
Fig. 9. Source Current vs.
Source-To-Drain Voltage
Fig. 10. Gate Charge
180
150
120
90
10
9
8
7
6
5
4
3
2
1
0
V
= 75V
DS
I
I
= 31A
D
G
= 10mA
60
T = 150ºC
J
30
T = 25ºC
J
0
0.6
0.8
1
VS D - Volts
1.2
1.4
10
20
30
40
Q G - nanoCoulombs
50
60
70
Fig. 12. Forward-Bias
Safe Operating Area
Fig. 11. Capacitance
1000
100
10
10000
1000
100
f = 1MHz
T = 175ºC
J
T
C
= 25ºC
R
Limit
C
DS(on)
iss
25µs
100µs
C
C
oss
rss
1ms
10ms
DC
1
5
10
15
20
VD S - Volts
25
30
35
10
100
1000
VD S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA 62N15P IXTP 62N15P
IXTQ 62N15P
Fig . 13. M axim u m T r an s ie n t T h e r m al Re s is tan ce
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
1
10
100
1000
Puls e W idth - millis ec onds
© 2006 IXYS All rights reserved
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