IXTH1N300P3HV [IXYS]
Power Field-Effect Transistor;
| 型号： | IXTH1N300P3HV |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总5页 (文件大小：216K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
High Voltage
Power MOSFET
VDSS
ID25
RDS(on) 50
= 3000V
= 1.00A
IXTT1N300P3HV
IXTH1N300P3HV
N-Channel Enhancement Mode
TO-268HV (IXTT)
G
S
D (Tab)
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
3000
3000
V
V
TO-247HV (IXTH)
VDGR
VGSS
VGSM
Continuous
Transient
20
30
V
V
ID25
ID110
IDM
TC = 25C
TC = 110C
TC = 25C, Pulse Width Limited by TJM
1.00
0.65
2.60
A
A
A
G
S
D (Tab)
D
PD
TC = 25C
195
W
TJ
TJM
Tstg
- 55 ... +150
150
- 55 ... +150
C
C
C
G = Gate
S = Source
D
= Drain
Tab = Drain
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Features
Md
Mounting Torque (TO-247)
1.13/10
Nm/lb.in
Weight
TO-268HV
TO-247HV
4.0
6.0
g
g
High Blocking Voltage
High Voltage Packages
Advantages
Easy to Mount
Space Savings
High Power Density
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
3000
2.0
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VGS = 20V, VDS = 0V
VDS = 0.8 • VDSS, VGS = 0V
V
V
Applications
4.0
High Voltage Power Supplies
Capacitor Discharge Applications
Pulse Circuits
Laser and X-Ray Generation Systems
100 nA
IDSS
25 A
TJ = 125C
250 A
RDS(on)
VGS = 10V, ID = 0.5A, Note 1
50
DS100590A(6/14)
© 2014 IXYS CORPORATION, All Rights Reserved
IXTT1N300P3HV
IXTH1N300P3HV
Symbol
Test Conditions
Characteristic Values
TO-268HV Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
E
A
E1
L2
C2
gfs
VDS = 50V, ID = 0.5A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
0.4
0.7
S
3
D1
3
D
H
D2
Ciss
Coss
Crss
895
48
pF
pF
pF
1
2
D3
2
1
A1
L4
C
e
e
b
17
td(on)
tr
td(off)
tf
22
35
78
60
ns
ns
ns
ns
Resistive Switching Times
V
GS = 10V, VDS = 500V, ID = 0.5 • ID25
L3
A2
RG = 20 (External)
L
Qg(on)
Qgs
30.6
4.0
nC
nC
nC
VGS = 10V, VDS = 1kV, ID = 0.5 • ID25
Qgd
15.7
RthJC
RthCS
0.64 C/W
C/W
TO-247HV
0.21
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
IS
VGS = 0V
1.0
A
A
ISM
VSD
trr
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
4.0
TO-247HV Outline
E1
E
A
R
0P
0P1
A2
1.5
V
Q
S
IF = 1A, -di/dt = 100A/μs, VR = 100V
1.8
μs
D1
D2
D
4
1
2
3
L1
A3
2X
D3
E2
E3
4X
A1
L
Note:
1. Pulse test, t 300s, duty cycle, d 2%.
e
b
b1
c
e1
3X
3X
PINS:
1 - Gate 2 - Source
3, 4 - Drain
PRELIMANARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1
4,835,592 4,931,844 5,049,961 5,237,481 6,162,665
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTT1N300P3HV
IXTH1N300P3HV
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Output Characteristics @ TJ = 125ºC
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V
= 10V
7V
V
= 10V
GS
GS
6V
6V
5V
5.5V
5V
4V
4V
0
20
40
60
80
100
0
10
20
30
40
50
60
70
80
90
100
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 0.5A Value vs.
Drain Current
Fig. 3. RDS(on) Normalized to ID = 0.5A Value vs.
Junction Temperature
3.0
2.6
2.2
1.8
1.4
1.0
0.6
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
V
= 10V
V
= 10V
GS
GS
T
J
= 125ºC
I
= 1A
D
I
= 0.5A
D
T
J
= 25ºC
1.2
0
0.2
0.4
0.6
0.8
1
1.4
-50
-25
0
25
50
75
100
125
150
ID - Amperes
TJ - Degrees Centigrade
Fig. 5. Maximum Drain Current vs.
Case Temperature
Fig. 6. Input Admittance
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1.2
1.0
0.8
0.6
0.4
0.2
0.0
T
J
= 125ºC
25ºC
- 40ºC
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
-50
-25
0
25
50
75
100
125
150
VGS - Volts
TC - Degrees Centigrade
© 2014 IXYS CORPORATION, All Rights Reserved
IXTT1N300P3HV
IXTH1N300P3HV
Fig. 7. Transconductance
Fig. 8. Forward Voltage Drop of Intrinsic Diode
1.2
1.0
0.8
0.6
0.4
0.2
0.0
3.0
2.5
2.0
1.5
1.0
0.5
0.0
T
J
= - 40ºC
25ºC
125ºC
T
J
= 125ºC
T
J
= 25ºC
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
VSD - Volts
ID - Amperes
Fig. 10. Capacitance
Fig. 9. Gate Charge
10,000
1,000
100
10
9
8
7
6
5
4
3
2
1
0
f
= 1 MHz
V
= 1000V
DS
I
I
= 0.5A
D
G
= 10mA
C
iss
C
oss
Crss
10
0
4
8
12
16
20
24
28
32
0
5
10
15
20
25
30
35
40
QG - NanoCoulombs
VDS - Volts
Fig. 11. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTT1N300P3HV
IXTH1N300P3HV
Fig. 12. Forward-Bias Safe Operating Area
@ TC = 25ºC
Fig. 13. Forward-Bias Safe Operating Area
@ TC = 75ºC
10
10
R
DS(on)
Limit
R
DS(on)
Limit
100µs
1ms
100µs
1ms
1
1
10ms
0.1
0.1
DC
10ms
100ms
DC
T
= 150ºC
= 75ºC
100ms
T
= 150ºC
= 25ºC
J
J
T
C
T
C
Single Pulse
Single Pulse
0.01
0.01
100
1,000
10,000
100
1,000
10,000
VDS - Volts
VDS - Volts
© 2014 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_1N300P3(M4) 6-02-14-A
相关型号：
IXTH200N085T
Power Field-Effect Transistor, 200A I(D), 85V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
IXYS
IXTH20N50D
Power Field-Effect Transistor, 20A I(D), 500V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA, GREEN, PLASTIC, TO-247, 3 PIN
IXYS
IXTH20N50D
Power Field-Effect Transistor, 20A I(D), 500V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA, GREEN, PLASTIC, TO-247, 3 PIN
LITTELFUSE
©2020 ICPDF网 联系我们和版权申明