IXTH3N200P3HV [IXYS]
Power Field-Effect Transistor;
| 型号： | IXTH3N200P3HV |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总4页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
High Voltage
Power MOSFET
VDSS
ID25
RDS(on) 8
= 2000V
= 3A
IXTT3N200P3HV
IXTH3N200P3HV
TO-268HV (IXTT)
N-Channel Enhancement Mode
G
S
D (Tab)
TO-247HV (IXTH)
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
2000
2000
V
V
VDGR
VGSS
VGSM
Continuous
Transient
20
30
V
V
G
S
ID25
ID110
IDM
TC = 25C
TC = 110C
TC = 25C, Pulse Width Limited by TJM
3.0
2.6
9.0
A
A
A
D (Tab)
D
G = Gate
D
= Drain
PD
TC = 25C
520
W
S = Source
Tab = Drain
TJ
TJM
Tstg
- 55 ... +150
150
- 55 ... +150
C
C
C
TL
TSOLD
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300
260
°C
°C
Features
Md
Mounting Torque
1.13/10
Nm/lb.in
High Blocking Voltage
High Voltage Packages
Weight
TO-268HV
TO-247HV
4
6
g
g
Advantages
Easy to Mount
Space Savings
High Power Density
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
2000
3.0
Typ. Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250A
VDS = VGS, ID = 250A
VGS = 20V, VDS = 0V
VDS = VDSS, VGS = 0V
V
V
Applications
5.0
High Voltage Power Supplies
Capacitor Discharge Applications
Pulse Circuits
Laser and X-Ray Generation Systems
100 nA
IDSS
10 A
TJ = 125C
250 μA
RDS(on)
VGS = 10V, ID = 1.5A, Note 1
8
DS100687(8/15)
© 2015 IXYS CORPORATION, All Rights Reserved
IXTT3N200P3HV
IXTH3N200P3HV
Symbol
Test Conditions
Characteristic Values
TO-268HV Outline
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
E
A
E1
L2
C2
gfs
VDS = 50V, ID = 1.5A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
Gate Input Resistance
2.3
3.8
S
3
D1
3
D
H
D2
Ciss
Coss
Crss
1860
133
58
pF
pF
pF
1
2
D3
2
1
A1
L4
C
e
e
b
RGi
3.8
PINS:
1 - Gate 2 - Source
3 - Drain
td(on)
tr
td(off)
tf
21
27
67
60
ns
ns
ns
ns
Resistive Switching Times
VGS = 10V, VDS = 500V, ID = 0.5 • ID25
RG = 5 (External)
L3
A2
L
Qg(on)
Qgs
70
8
nC
nC
nC
VGS = 10V, VDS = 1kV, ID = 0.5 • ID25
Qgd
39
RthJC
RthCS
0.24 °C/W
°C/W
TO-247HV
0.21
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
TO-247HV Outline
IS
VGS = 0V
3
A
A
V
E1
E
A
R
0P
0P1
A2
ISM
VSD
Repetitive, Pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
12
Q
S
1.5
D1
D2
D
4
trr
420
380
1.8
ns
nC
A
IF = 1.5A, -di/dt = 100A/s
1
2
3
QRM
IRM
L1
A3
2X
D3
E2
E3
4X
VR = 100V, VGS = 0V
A1
L
e
b
b1
c
e1
3X
3X
Note:
1. Pulse test, t 300s, duty cycle, d 2%.
PINS:
1 - Gate 2 - Source
3, 4 - Drain
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTT3N200P3HV
IXTH3N200P3HV
Fig. 2. Output Characteristics @ TJ = 125ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
= 10V
GS
V
= 10V
GS
6V
7V
6V
5V
5V
4V
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 1.5A Value vs.
Drain Current
Fig. 3. RDS(on) Normalized to ID = 1.5A Value vs.
Junction Temperature
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
V
= 10V
GS
V
= 10V
GS
T
J
= 125ºC
I
= 3.0A
D
I
= 1.5A
D
T
J
= 25ºC
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
ID - Amperes
TJ - Degrees Centigrade
Fig. 5. Maximum Drain Current vs.
Case Temperature
Fig. 6. Input Admittance
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
T
J
= 125ºC
25ºC
-40ºC
-50
-25
0
25
50
75
100
125
150
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
TC - Degrees Centigrade
VGS - Volts
© 2015 IXYS CORPORATION, All Rights Reserved
IXTT3N200P3HV
IXTH3N200P3HV
Fig. 7. Transconductance
Fig. 8. Forward Voltage Drop of Intrinsic Diode
8
7
6
5
4
3
2
1
0
9
8
7
6
5
4
3
2
1
0
T
J
= - 40ºC
25ºC
125ºC
T
J
= 125ºC
T
J
= 25ºC
0
0.5
1
1.5
2
2.5
3
3.5
4
0.3
0.4
0.5
0.6
0.7
0.8
0.9
40
10
ID - Amperes
VSD - Volts
Fig. 9. Gate Charge
Fig. 10. Capacitance
10,000
1,000
100
10
8
= 1 MHz
f
V
= 1kV
DS
I
I
= 1.5A
D
G
= 10mA
C
C
iss
6
oss
4
2
C
rss
10
0
535
0
10
15
20
25
30
0
10
20
30
40
50
60
70
VDS - Volts
QG - NanoCoulombs
Fig. 12 Maximum Transient Thermal Impedance
Fig. 11. Forward-Bias Safe Operating Area
aaaa
0.4
0.1
10
25µs
100µs
1ms
R
Limit
)
on
1
DS(
10ms
0.1
100ms
T = 150ºC
DC
J
T
C
= 25ºC
Single Pulse
0.01
0.01
100
1,000
10,000
0.0001
0.001
0.01
0.1
1
VDS - Volts
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_3N200P3HV (H7-AT653) 8-20-15
相关型号：
IXTH40N50L2
Power Field-Effect Transistor, 40A I(D), 500V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3
IXYS
IXTH41N25
Power Field-Effect Transistor, 41A I(D), 250V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
IXYS
IXTH42N20
Power Field-Effect Transistor, 42A I(D), 200V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
IXYS
©2020 ICPDF网 联系我们和版权申明