IXTP3N120 [IXYS]
High Voltage Power MOSFETs; 高电压功率MOSFET
| 型号： | IXTP3N120 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Voltage Power MOSFETs |
| 文件： | 总4页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VDSS
ID25
RDS(on)
High Voltage
IXTA/IXTP3N120
IXTA/IXTP3N110
1200 V 3 A 4.5 Ω
1100 V 3 A 4.0 Ω
Power MOSFETs
N-ChannelEnhancementMode
AvalancheRated,Highdv/dt
PreliminaryDataSheet
Symbol
VDSS
TestConditions
Maximum Ratings
TO-220 (IXTP)
TJ = 25°C to 150°C
3N120
3N110
1200
1100
V
V
VDGR
TJ = 25°C to 150°C; RGS = 1 MΩ
3N120
1200
1100
V
V
3N110
D (TAB)
VGS
Continuous
Transient
±20
±30
V
V
G
D
S
VGSM
ID25
IDM
IAR
TC = 25°C
3
12
3
A
A
A
TO-263(IXTA)
TC = 25°C, pulse width limited by TJM
TC = 25°C
EAR
EAS
TC = 25°C
20
mJ
mJ
G
D (TAB)
S
700
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
,
5
V/ns
TJ ≤ 150°C, RG = 2 Ω
G = Gate
D
= Drain
S = Source
TAB = Drain
PD
TC = 25°C
150
W
TJ
-55 to +150
150
°C
°C
°C
TJM
Tstg
Features
-55 to +150
l
International standard packages
Low RDS (on)
l
l
TL
1.6 mm (0.063 in) from case for 10 s
Mounting torque (TO-220)
300
°C
Rated for unclamped Inductive load
Switching (UIS)
Md
1.13/10 Nm/lb.in.
l
Molding epoxies meet UL 94 V-0
flammability classification
Weight
TO-220
TO-263
4
2
g
g
Advantages
Symbol
VDSS
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
l
Easy to mount
min.
typ.
max.
l
Space savings
l
High power density
VGS = 0 V, ID = 1 mA
3N120
3N110
1200
1100
V
V
VGS(th)
IGSS
VDS = VGS, ID = 250 µA
VGS = ±20 VDC, VDS = 0
2.5
4.5
V
±100
nA
IDSS
VDS = 0.8 VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
25
1
µA
mA
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Note 1
3N120
3N110
4.5
4.0
Ω
Ω
© 2001 IXYS All rights reserved
98844A (11/01)
IXTA/IXTP 3N120
IXTA/IXTP 3N110
TO-220 (IXTP) Outline
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, Note 1
1.5
2.2
S
Ciss
Coss
Crss
1050 1300
100 125
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
25
50
td(on)
tr
td(off)
tf
17
15
32
18
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 4.7 Ω (External),
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
Bottom Side
Qg(on)
Qgs
39
9
nC
nC
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
22
RthJC
RthCK
0.8
K/W
K/W
(TO-220)
0.25
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
TestConditions
IS
VGS = 0 V
3
12
A
ISM
VSD
trr
Repetitive; pulse width limited by TJM
IF = IS, VGS = 0 V, Note 1
A
V
TO-263(IXTA)Outline
1.5
IF = IS, -di/dt = 100 A/µs, VR = 100 V
700
ns
Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1. Gate
2. Drain
3. Source
4. Drain
BottomSide
Dim.
Millimeter
Inches
Min.
Max.
Min.
.160
Max.
.190
A
4.06
2.03
4.83
A1
2.79.080
.110
b
0.51
1.14
0.99
1.40
.020
.045
.039
.055
b2
c
0.46
1.14
0.74
1.40
.018
.045
.029
.055
c2
D
8.64
7.11
9.65
8.13
.340
.280
.380
.320
D1
E
9.65
6.86
2.54
10.29
8.13
.380
.270
.100
.405
.320
BSC
E1
e
BSC
L
14.61
15.88
.575
.625
L1
L2
L3
L4
2.2902.79.09.110
1.02
1.27
0
1.40
1.78
0.38
.040
.050
0
.055
.070
.015
R
0.46
0.74
.018
.029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
IXTA/IXTP 3N120
IXTA/IXTP 3N110
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
5
4
3
2
1
0
VGS = 9V
TJ = 125OC
VGS = 9V
TJ = 25OC
8V
7V
6V
8V
7V
6V
5V
5V
4V
4V
12 15 18 21 24 27 30
VDS - Volts
0
3
6
9
0
2
4
6
8
10 12 14 16 18 20
VDS - Volts
Fig.1 Output Characteristics @ Tj = 25°C
Fig. 2 Output Characteristics @ Tj = 125°C
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
2.8
VGS = 10V
VGS = 10V
TJ = 125OC
2.5
2.2
1.9
1.6
1.3
1.0
ID = 3A
ID =1.5A
TJ = 25OC
0
1
2
3
4
5
25
50
75
100
125
150
ID - Amperes
Fig. 3 RDS(on) vs. Drain Current
TJ - Degrees C
Fig.4 Temperature Dependence of Drain
to Source Resistance
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
3.0
2.5
2.0
IXT_3N110
IXT_3N120
1.5
TJ = 125oC
1.0
TJ = 25oC
0.5
0.0
-50 -25
0
25 50 75 100 125 150
3.5
4.0
4.5
VGS - Volts
Fig. 6 Drain Current vs Gate Source Voltage
5.0
5.5
6.0
TC - Degrees C
Fig.5 Drain Current vs. Case Temperature
© 2001 IXYS All rights reserved
IXTA/IXTP 3N120
IXTA/IXTP 3N110
12
10
8
Ciss
f = 1MHz
1000
100
10
V
DS = 600V
ID = 1.5A
Coss
Crss
6
4
2
0
0
10
20
30
40
50
60
0
5
10 15 20 25 30 35 40
Gate Charge - nC
Fig.7GateChargeCharacteristicCurve
VDS - Volts
Fig.8 CapacitanceCurves
5
VGS = 0V
4
3
2
1
0
TJ = 125OC
TJ = 25OC
0.2
0.4
0.6
VSD - Volts
Fig.9DrainCurrentvsDraintoSourceVoltage
0.8
1.0
1.00
0.10
0.01
0.00
Single Pulse
10-4
10-3
10-2
10-1
100
101
Pulse Width - Seconds
Fig.10TransientThermalImpedance
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
相关型号：
IXTP3N60P
Power Field-Effect Transistor, 3A I(D), 600V, 2.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
IXYS
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