IXTV200N10TS [IXYS]
Power Field-Effect Transistor, 200A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220SMD, 3 PIN;
| 型号： | IXTV200N10TS |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, 200A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS220SMD, 3 PIN 局域网 开关 脉冲 晶体管 |
| 文件： | 总5页 (文件大小：208K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TrenchMVTM Power
MOSFET
VDSS = 100V
ID25 = 200A
RDS(on) ≤ 5.5mΩ
IXTV200N10T
IXTV200N10TS
N-Channel Enhancement Mode
Avalanche Rated
PLUS220 (IXFV)
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
100
100
V
V
G
D
S
VDGR
D (TAB)
VGSM
Transient
± 30
V
ID25
ILRMS
IDM
TC = 25°C
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
200
75
A
A
A
PLUS220SMD(IXFV_S)
500
IA
TC = 25°C
TC = 25°C
TC = 25°C
40
1.5
A
J
G
S
EAS
PD
D (TAB)
550
W
G = Gate
S = Source
D
TAB
=
=
Drain
Drain
TJ
-55 ... +175
175
°C
°C
°C
TJM
Tstg
-55 ... +175
Features
TL
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
300
260
°C
°C
ꢀInternationalstandardpackages
ꢀ175°COperatingTemperature
ꢀAvalancheRated
FC
Mounting force (PLUS220)
PLUS220 types
11.65 / 2.5..14.6
4
N/lb.
g
Weight
ꢀ
Low RDS(on)
Advantages
ꢀ
Easy to mount
Space savings
Highpowerdensity
ꢀ
Symbol
Test Conditions
Characteristic Values
ꢀ
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 250μA
VGS = ± 20V, VDS = 0V
100
2.5
V
V
Applications
4.5
ꢀ
Automotive
±200 nA
μA
- MotorDrives
- High Side Switch
- 12VBattery
IDSS
VDS = VDSS
VGS = 0V
5
TJ = 150°C
250 μA
5.5 mΩ
- ABS Systems
ꢀ
DC/DC Converters and Off-line UPS
Primary - Side Switch
High Current Switching Applications
RDS(on)
VGS = 10V, ID = 50A, Notes 1, 2
4.5
ꢀ
ꢀ
DS99714A(10/08)
© 2008 IXYS CORPORATION, All rights reserved
IXTV200N10T
IXTV200N10TS
Symbol
Test Conditions
Characteristic Values
Min. Typ. Max.
PLUS220 (IXTV) Outline
(TJ = 25°C, unless otherwise specified)
gfs
VDS = 10V, ID = 60A, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
60
96
S
Ciss
Coss
Crss
9400
1087
140
pF
pF
pF
td(on)
tr
td(off)
tf
35
31
45
34
ns
ns
ns
ns
ResistiveSwitchingTimes
V
GS = 10V, VDS = 0.5 • VDSS, ID = 50A
RG = 3.3Ω (External)
Qg(on)
Qgs
152
47
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 50A
Qgd
47
RthJC
RthCH
0.27 °C/W
°C/W
PLUS220
0.21
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
200
500
1.0
IS
VGS = 0V
A
A
V
ISM
VSD
Repetitive, Pulse width limited by TJM
IF = 50A, VGS = 0V, Note 1
PLUS220SMD (IXTV_S) Outline
trr
QRM
IRM
76
205
5.4
ns
nC
A
IF = 100A, VGS = 0V,-di/dt = 100A/μs
VR = 50V
Notes: 1. Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
IXTV200N10T
IXTV200N10TS
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
350
300
250
200
150
100
50
200
180
160
140
120
100
80
VGS = 10V
VGS = 10V
9V
8V
9V
8V
7V
6V
7V
60
6V
5V
40
20
5V
0
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VDS - Volts
0
1
2
3
4
5
6
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 100A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 150ºC
200
180
160
140
120
100
80
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
VGS = 10V
VGS = 10V
9V
8V
7V
6V
I D = 200A
I D = 100A
60
40
20
5V
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
VDS - Volts
-50
-25
0
25
50
75
100
125
150
175
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 100A Value
vs. Drain Current
Fig. 6. Drain Current vs. Case Temperature
90
80
70
60
50
40
30
20
10
0
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
External Lead Current Limit
VGS = 10V
15V
- - - -
TJ = 175ºC
TJ = 25ºC
0
40
80
120
160
200
240
280
320
-50
-25
0
25
50
75
100
125
150
175
ID - Amperes
TC - Degrees Centigrade
© 2008 IXYS CORPORATION, All rights reserved
IXTV200N10T
IXTV200N10TS
Fig. 8. Transconductance
Fig. 7. Input Admittance
250
225
200
175
150
125
100
75
160
140
120
100
80
TJ = - 40ºC
25ºC
150ºC
TJ = 150ºC
25ºC
- 40ºC
60
40
50
20
25
0
0
0
25
50
75
100 125 150 175 200 225 250
ID - Amperes
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
300
270
240
210
180
150
120
90
VDS = 50V
I D = 25A
I G = 10mA
TJ = 150ºC
TJ = 25ºC
60
30
0
0
20
40
60
80
100
120
140
160
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
QG - NanoCoulombs
VSD - Volts
Fig. 12. Maximum Transient Thermal
Impedance
Fig. 11. Capacitance
100,000
10,000
1,000
100
1.00
0.10
0.01
= 1MHz
f
C
iss
C
oss
C
rss
0
5
10
15
20
25
30
35
40
0.0001
0.001
0.01
0.1
1
10
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
Pulse Width - Seconds
IXYS REF: T_200N10T(6V)9-30-08-D
IXTV200N10T
IXTV200N10TS
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
34
33
32
31
30
29
28
27
26
25
24
23
22
33
32
31
30
29
28
27
26
25
24
23
22
RG = 3.3Ω
RG = 3.3ꢀ
VGS = 10V
VDS = 50V
VGS = 10V
VDS = 50V
TJ = 25ºC
I D = 50A
TJ = 125ºC
I D = 25A
24 26 28 30 32 34 36 38 40 42 44 46 48 50
ID - Amperes
25
35
45
55
65
75
85
95
105 115 125
TJ - Degrees Centigrade
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
42
40
38
36
34
32
30
28
75
220
200
180
160
140
120
100
80
85
80
75
70
65
60
55
50
45
40
35
30
t f
t
d(off) - - - -
RG = 3.3Ω, VGS = 10V
t r
t
d(on) - - - -
TJ = 125ºC, VGS = 10V
70
65
60
55
50
45
40
VDS = 50V
VDS = 50V
I D = 25A
I D = 50A
I D = 25A
I D = 50A
60
40
20
0
2
4
6
8
10
12
14
16
18
20
25
35
45
55
65
75
85
95
105 115 125
RG - Ohms
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
38
37
36
35
34
33
32
31
30
80
75
70
65
60
55
50
45
40
200
180
160
140
120
100
80
300
275
250
225
200
175
150
125
100
75
t f
t
d(off) - - - -
RG = 3.3Ω, VGS = 10V
t f
t
d(off) - - - -
TJ = 125ºC, VGS = 10V
TJ = 125ºC
VDS = 50V
VDS = 50V
TJ = 25ºC
TJ = 25ºC
I D = 25A
I D = 50A
60
40
TJ = 125ºC
20
0
50
24 26 28 30 32 34 36 38 40 42 44 46 48 50
ID - Amperes
2
4
6
8
10
12
14
16
18
20
RG - Ohms
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: T_200N10T(6V)9-30-08-D
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