MDD175-28N1 [IXYS]
Rectifier Diode, 1 Phase, 2 Element, 175A, 2800V V(RRM), Silicon, MODULE-3;
| 型号： | MDD175-28N1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Rectifier Diode, 1 Phase, 2 Element, 175A, 2800V V(RRM), Silicon, MODULE-3 局域网 高功率电源 二极管 |
| 文件： | 总5页 (文件大小：261K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MDD175-28N1
=
VRRM
IFAV
VF
2x2800V
240A
High Voltage Standard Rectifier Module
=
=
1.01V
Phase leg
Part number
MDD175-28N1
Backside: isolated
2
1
3
Y1
Features / Advantages:
Applications:
Package:
● Planar passivated chips
● Diode for main rectification
● For single and three phase
bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
● Isolation Voltage:
● Industry standard outline
● RoHS compliant
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
V~
4800
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20170116h
© 2017 IXYS all rights reserved
MDD175-28N1
Ratings
Rectifier
Symbol
VRSM
Definition
Conditions
min. typ. max. Unit
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
2900
2800
1
V
V
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
VRRM
IR
reverse current
VR =2800 V
mA
mA
V
VR =2800 V
IF = 200 A
IF = 400 A
IF = 200 A
IF = 400 A
TC = 100°C
180° sine
5
forward voltage drop
1.07
1.26
1.01
1.26
240
VF
V
TVJ
=
°C
V
125
V
average forward current
threshold voltage
TVJ = 150°C
TVJ = 150°C
A
IFAV
d = 0.5
0.74
V
VF0
for power loss calculation only
slope resistance
1.27 mΩ
0.14 K/W
K/W
rF
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
Ptot
0.04
TC = 25°C
TVJ = 45°C
VR = 0 V
900
8.50
9.18
7.23
7.81
W
kA
kA
kA
kA
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 1100 V; f = 1 MHz
IFSM
TVJ = 150°C
VR = 0 V
value for fusing
TVJ = 45°C
VR = 0 V
I²t
361.3 kA²s
350.6 kA²s
261.0 kA²s
253.4 kA²s
pF
TVJ = 150°C
VR = 0 V
TVJ = 25°C
182
CJ
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20170116h
© 2017 IXYS all rights reserved
MDD175-28N1
Ratings
Package Y1
Symbol
IRMS
Definition
Conditions
min. typ. max. Unit
per terminal
600
150
125
125
A
°C
°C
°C
g
RMS current
-40
-40
-40
TVJ
virtual junction temperature
operation temperature
storage temperature
Top
Tstg
680
Weight
4.5
11
7
Nm
MD
mounting torque
terminal torque
M
13 Nm
T
terminal to terminal
terminal to backside
16.0
16.0
4800
4000
mm
mm
V
dSpp/App
dSpb/Apb
creepage distance on surface | striking distance through air
t = 1 second
V
isolation voltage
ISOL
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute
V
Production
Index (PI)
Date Code
(DC)
Circuit
yywwAA
Part Number
Lot.No: xxxxxx
Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31),
blank (32), serial no.# (33-36)
Ordering
Ordering Number
Marking on Product
MDD175-28N1
Delivery Mode
Quantity Code No.
504295
Standard
MDD175-28N1
Box
3
TVJ = 150°C
Equivalent Circuits for Simulation
* on die level
Rectifier
V0
I
R0
threshold voltage
slope resistance *
0.74
0.75
V
V0 max
R0 max
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20170116h
© 2017 IXYS all rights reserved
MDD175-28N1
Outlines Y1
3x M8
2.8 x 0.8
20
22.5
35
28.5
1
2
3
6.2
80
92
115
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red
Type ZY 180L (L = Left for pin pair 4/5)
UL 758, style 3751
Type ZY 180R (R = Right for pin pair 6/7)
2
1
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20170116h
© 2017 IXYS all rights reserved
MDD175-28N1
Rectifier
106
600
7000
6000
50 Hz, 80%VRRM
VR = 0 V
500
TVJ = 45°C
TVJ = 45°C
400
I2t
105
IF
IFSM
5000
[A]
TVJ = 150°C
300
[A2s]
[A]
200
100
0
4000
TVJ = 150°C
TVJ
= 25°C
TVJ = 125°C
TVJ = 150°C
104
3000
0.5
1.0
VF [V]
1.5
0.001
0.01
0.1
1
1
2
3
4 5 6 7 8 10
t [s]
Fig. 2 Surge overload current
t [ms]
Fig. 3 I2t versus time per diode
Fig. 1 Forward current versus
voltage drop per diode
700
600
500
400
300
DC =
1
RthHA =
DC =
1
0.1K/W
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
0.5
0.5
0.4
IF(AV)M
0.4
0.33
0.17
0.08
Ptot
200
[W]
400
300
200
100
0
0.33
0.17
0.08
[A]
100
0
0
50
100
150
0
100
200
300
0
50
100
Tamb [°C]
150
TC [°C]
IF(AV)M [A]
Fig. 5 Max. forward current vs.
case temperature
Fig. 4 Power dissipation vs. direct output current and ambient temperature
0.16
0.12
Constants for ZthJC calculation:
ZthJC
i
Rthi (K/W)
ti (s)
0.08
1
2
3
4
5
0.155
0.332
0.713
0.3
0.0005
0.0095
0.17
[K/W]
0.04
0.00
0.8
0.00001 0.00001
1
10
100
1000
10000
t [ms]
Fig. 6 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20170116h
© 2017 IXYS all rights reserved
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