MIXA20WB1200TMI [IXYS]
Insulated Gate Bipolar Transistor,;
| 型号： | MIXA20WB1200TMI |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Insulated Gate Bipolar Transistor, 栅 |
| 文件： | 总11页 (文件大小：271K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MIXA20WB1200TMI
tentative
3~
Rectifier
Brake
Chopper
3~
Inverter
XPT IGBT Module
VCES
= 1200 V
VRRM
V V
V
28 A
1.8 V
= 1600
= 1200
CES
IC25
28
IDAV
70 A IC25
=
=
A
V
=
=
=
=
VCE(sat)
1.8
IFSM
270 A VCE(sat)
6-Pack + 3~ Rectifier Bridge & Brake Unit + NTC
Part number
MIXA20WB1200TMI
Backside: isolated
P P1
G1
B
G3
G5
T1
T2
L1
L2
L3
U
V
W
GB
G2
G4
G6
N
NB
EU
EV
Applications:
EW
MiniPack2B
Features / Advantages:
Package:
● Easy paralleling due to the positive temperature
coefficient of the on-state voltage
● Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
● AC motor drives
● Solar inverter
● Medical equipment
● Uninterruptible power supply
● Air-conditioning systems
● Welding equipment
● Isolation Voltage:
● Industry standard outline
● RoHS compliant
V~
3000
● Epoxy meets UL 94V-0
- low EMI
- square RBSOA @ 3x Ic
● Switched-mode and resonant-mode
power supplies
● Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
● SONIC™ diode
● Inductive heating, cookers
● Pumps, Fans
- fast and soft reverse recovery
- low operating forward voltage
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20140129
© 2014 IXYS all rights reserved
MIXA20WB1200TMI
tentative
Ratings
Rectifier
Conditions
Symbol
VRSM
Definition
min. typ. max. Unit
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
1700
1600
10
V
V
max. non-repetitive reverse blocking voltage
max. repetitive reverse blocking voltage
VRRM
IR
reverse current
VR = 1600 V
VR = 1600 V
µA
mA
V
1
forward voltage drop
VF
20
1.19
1.54
1.12
1.59
70
IF =
A
V
IF = 40 A
IF = 20 A
IF = 40 A
TC = 80°C
rectangular
TVJ
=
°C
V
125
V
bridge output current
TVJ = 150°C
TVJ = 150°C
A
IDAV
d = ⅓
VF0
0.86
V
threshold voltage
slope resistance
for power loss calculation only
rF
12.3 mΩ
1.8 K/W
K/W
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
Ptot
0.35
TC = 25°C
TVJ = 45°C
VR = 0 V
70
270
290
230
250
W
A
A
A
A
total power dissipation
max. forward surge current
IFSM
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400 V; f = 1 MHz
TVJ = 150°C
VR = 0 V
value for fusing
I²t
TVJ = 45°C
VR = 0 V
365 A²s
350 A²s
265 A²s
260 A²s
pF
TVJ = 150°C
VR = 0 V
CJ
TVJ = 25°C
10
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20140129
© 2014 IXYS all rights reserved
MIXA20WB1200TMI
tentative
Ratings
Brake IGBT
Symbol
VCES
Definition
collector emitter voltage
Conditions
min. typ. max. Unit
TVJ
=
25°C
1200
±20
±30
28
V
V
V
A
A
W
V
V
V
max. DC gate voltage
VGES
VGEM
IC25
max. transient gate emitter voltage
collector current
TC = 25°C
TC = 80°C
TC = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
IC
20
80
total power dissipation
P
tot
100
2.1
collector emitter saturation voltage
VCE(sat)
IC = 15 A; VGE = 15 V
1.8
2.1
5.9
gate emitter threshold voltage
collector emitter leakage current
VGE(th)
ICES
IC = 0.6 mA; VGE = VCE
VCE = VCES; VGE = 0 V
5.4
6.5
0.1 mA
mA
0.1
gate emitter leakage current
total gate charge
IGES
VGE = ±20 V
500
nA
nC
ns
QG(on)
td(on)
tr
VCE = 600 V; V = 15 V; IC = 15 A
48
70
GE
turn-on delay time
current rise time
40
ns
inductive load
TVJ = 125°C
turn-off delay time
td(off)
t f
250
100
1.6
1.7
ns
VCE = 600 V; IC = 15 A
VGE = ±15 V; RG = 56 Ω
current fall time
ns
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
Eon
mJ
mJ
Eoff
RBSOA
ICM
VGE = ±15 V; RG = 56 Ω
TVJ = 125°C
TVJ = 125°C
VCEK = 1200 V
45
10
A
short circuit safe operating area
short circuit duration
SCSOA
tSC
VCE = 900 V; V = ±15 V
µs
A
GE
short circuit current
ISC
RG = 56 Ω; non-repetitive
60
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
1.26 K/W
K/W
0.42
Brake Diode
max. repetitive reverse voltage
VRRM
IF25
IF80
VF
TVJ = 25°C
TC = 25°C
1200
18
V
A
A
V
V
forward current
forward voltage
reverse current
12
TC = 80°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
IF = 10A
VR = VRRM
2.20
2.20
IR
0.1 mA
0.2 mA
µC
reverse recovery charge
Qrr
VR = 600 V
-diF /dt = 250A/µs
IF = 10A
1.3
10.5
350
0.4
max. reverse recovery current
reverse recovery time
IRM
TVJ = 125°C
A
trr
ns
reverse recovery energy
Erec
RthJC
RthCH
mJ
thermal resistance junction to case
thermal resistance case to heatsink
2.5 K/W
K/W
0.83
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20140129
© 2014 IXYS all rights reserved
MIXA20WB1200TMI
tentative
Ratings
Inverter IGBT
Symbol
VCES
Definition
collector emitter voltage
Conditions
min. typ. max. Unit
TVJ
=
25°C
1200
±20
±30
28
V
V
V
A
A
W
V
V
V
max. DC gate voltage
VGES
VGEM
IC25
max. transient gate emitter voltage
collector current
TC = 25°C
TC = 80°C
TC = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
IC
20
80
total power dissipation
P
tot
100
2.1
collector emitter saturation voltage
VCE(sat)
IC = 15A; V = 15 V
1.8
2.1
5.9
GE
gate emitter threshold voltage
collector emitter leakage current
VGE(th)
ICES
IC = 0.6mA; VGE = VCE
5.4
6.5
VCE = VCES; V = 0 V
0.1 mA
mA
GE
0.1
gate emitter leakage current
total gate charge
IGES
VGE = ±20 V
500
nA
nC
ns
QG(on)
td(on)
tr
VCE = 600 V; V = 15 V; IC = 15 A
48
70
GE
turn-on delay time
current rise time
40
ns
inductive load
VCE 600V; IC = 15A
TVJ = 125°C
turn-off delay time
td(off)
t f
250
100
1.6
1.7
ns
=
current fall time
ns
VGE = ±15 V; RG= 56 Ω
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
Eon
mJ
mJ
Eoff
RBSOA
ICM
VGE = ±15 V; RG= 56 Ω
VCEmax = 1200V
TVJ = 125°C
TVJ = 125°C
A
45
10
short circuit safe operating area
short circuit duration
SCSOA
tSC
VCEmax = 900V
VCE = 900V; VGE = ±15 V
RG = 56Ω; non-repetitive
µs
A
short circuit current
ISC
60
thermal resistance junction to case
thermal resistance case to heatsink
RthJC
RthCH
1.26 K/W
K/W
0.42
Inverter Diode
max. repetitive reverse voltage
VRRM
IF25
IF80
VF
TVJ = 25°C
TC = 25°C
TC = 80°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
1200
18
V
A
A
V
V
forward current
forward voltage
reverse current
12
IF = 10A
VR = VRRM
2.20
2.20
IR
0.1 mA
mA
0.2
1.3
reverse recovery charge
Qrr
µC
VR = 600 V
max. reverse recovery current
reverse recovery time
IRM
10.5
350
0.4
A
-diF /dt = 250 A/µs
TVJ = 125°C
trr
ns
IF = 10A; V = 0 V
GE
reverse recovery energy
Erec
RthJC
RthCH
mJ
thermal resistance junction to case
thermal resistance case to heatsink
2.5 K/W
K/W
0.83
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20140129
© 2014 IXYS all rights reserved
MIXA20WB1200TMI
tentative
Ratings
Package MiniPack2B
Symbol
IRMS
Definition
Conditions
per terminal
min. typ. max.
Unit
A
RMS current
TVJ
-40
-40
-40
150
125
125
°C
°C
°C
g
virtual junction temperature
operation temperature
storage temperature
Top
Tstg
Weight
MD
39
2
2.2 Nm
mounting torque
terminal to terminal
terminal to backside
dSpp/App
dSpb/Apb
6.3
5.0
mm
mm
V
creepage distance on surface | striking distance through air
11.5 10.0
3000
t = 1 second
V
isolation voltage
ISOL
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute
2500
V
Rpin-chip
V = VCEsat + 2·R·IC resp. V = VF + 2·R·IF
6
mΩ
resistance pin to chip
max. virtual junction temperature
°C
Tvjm
175
Part number
Logo
M = Module
Date Code Location
I = IGBT
X = XPT IGBT
A = Gen 1 / std
20 = Current Rating [A]
yywwx
XXXXXXXXXXX
WB = 6-Pack + 3~ Rectifier Bridge & Brake Unit
1200 = Reverse Voltage [V]
Part number
2D Data Matrix
T = Thermistor \ Temperature sensor
MI = MiniPack2B
Ordering
Standard
Part Number
Marking on Product
MIXA20WB1200TMI
Delivery Mode
Blister
Quantity Code No.
MIXA20WB1200TMI
20
514795
105
Temperature Sensor NTC
Symbol Definition
Conditions
TVJ = 25°
min.
4.75
typ. max. Unit
104
resistance
R25
5
5.25
kΩ
R
temperature coefficient
3375
B25/50
K
[
]
103
TVJ = 150°C
* on die level
Equivalent Circuits for Simulation
Rectifier
Brake
IGBT
Brake
Diode
Inverter
IGBT
Inverter
Diode
V0
102
I
R0
0
25
50
75
100 125 150
TC [°C]
threshold voltage
slope resistance *
V0 max
R0 max
0.86
10
1.1
86
1.25
90
1.1
1.25
90
V
Typ. NTC resistance vs. temperature
86
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20140129
© 2014 IXYS all rights reserved
MIXA20WB1200TMI
tentative
Outlines MiniPack2B
W
U
V
L3
G3
G1
G5
L2
P1
T2
L1
B
T1
P
N
G6
G4
G2 NB GB
EW
EV
EU
Ø 0.4
Pin positions with tolerance
P
P1
G1
B
G3
G5
T1
T2
L1
L2
L3
U
V
W
GB
G2
G4
G6
N
NB
EU
EV
EW
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20140129
© 2014 IXYS all rights reserved
MIXA20WB1200TMI
tentative
Rectifier
t [ms]
t [s]
VF [V]
Fig. 3 I2t versus time per diode
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
Fig. 4 Power dissipation versus direct output current
and ambient temperature, sine 180°
Fig. 5 Max. forward current
versus case temperature
Fig. 6 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20140129
© 2014 IXYS all rights reserved
MIXA20WB1200TMI
tentative
Brake IGBT
30
30
20
10
0
30
13 V
VGE = 15 V
11 V
17 V
19 V
TVJ = 125°C
25°C
20
10
0
20
IC
IC
IC
9 V
[A]
[A]
[A]
10
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
4
0
0
1
2
3
0
1
2
3
5
5
6
7
8
9
10 11 12 13
VCE [V]
Fig. 3 Typ. transfer characteristics
VCE [V]
Fig. 2 Typ. output characteristics
VCE [V]
Fig. 1 Typ. output characteristics
20
15
10
5
4
3
2
1
0
2.8
RG
VCE = 600 V
VGE 15 V
TVJ = 125°C
=
56
IC =
VCE = 600 V
VGE 15 V
TVJ = 125°C
15 A
IC
= 15 A
VCE = 600 V
Eon
=
=
2.4
2.0
1.6
1.2
VGE
[V]
E
Eoff
E
[mJ]
[mJ]
Eoff
Eon
0
0
10 20 30 40 50 60
0
10
20
30
40 60 80 100 120 140 160
IC [A]
QG [nC]
RG [ ]
Fig. 4 Typ. turn-on gate charge
Fig. 5 Typ. switching energy
vs. collector current
Fig. 6 Typ. switching energy
versus gate resistance
2
1
ZthJC
R
t
i
[K/W]
i
[K/W] [s]
1
2
3
4
0.252 0.0015
0.209 0.03
0.541 0.03
0.258 0.08
0.1
0.001
0.01
0.1
1
10
t [s]
Fig. 7 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20140129
© 2014 IXYS all rights reserved
MIXA20WB1200TMI
tentative
Brake Diode
20
2.4
2.0
1.6
1.2
0.8
0.4
24
TVJ = 125°C
VR = 600 V
TVJ = 125°C
VR = 600 V
40 A
15
20
16
12
8
40 A
20 A
10 A
IC
10
[A]
IRR
[A]
Qrr
20 A
10 A
[μC]
TVJ = 125°C
5
25°C
0
0
1
2
3
200
300
400
500
200
300
400
500
-diF /dt [A/μs]
-diF /dt [A/μs]
VCE [V]
Fig. 2 Typ. reverse recovery
charge Qrr versus di/dt
Fig. 3 Typ. peak reverse current
IRM versus di/dt
Fig. 1 Typ. Forward current
versus VF
600
500
400
300
200
100
0.6
0.5
0.4
0.3
0.2
TVJ = 125°C
VR = 600 V
TVJ = 125°C
VR = 600 V
40 A
40 A
20 A
10 A
Erec
trr
20 A
10 A
[ns]
[mJ]
200
300
400
500
200
300
400
500
-diF /dt [A/μs]
-diF /dt [A/μs]
Fig. 5 Typ. recovery time
trr versus -diF /dt
Fig. 6 Typ. recovery energy
Erec versus -di/dt
Fig. 4 Dynamic parameters
Qr, IRM versus TVJ
10
ZthJC
1
[K/W]
Ri
ti
0.002
1
2
3
4
0.8
0.58 0.03
0.98 0.03
0.04 0.08
0.1
0.001
0.01
0.1
1
10
t [s]
Fig. 7 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20140129
© 2014 IXYS all rights reserved
MIXA20WB1200TMI
tentative
Inverter IGBT
30
30
20
10
0
30
13 V
VGE = 15 V
11 V
17 V
19 V
TVJ = 125°C
25°C
20
10
0
20
IC
IC
IC
9 V
[A]
[A]
[A]
10
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
4
0
0
1
2
3
0
1
2
3
5
5
6
7
8
9
10 11 12 13
VCE [V]
Fig. 3 Typ. transfer characteristics
VCE [V]
Fig. 2 Typ. output characteristics
VCE [V]
Fig. 1 Typ. output characteristics
20
15
10
5
4
3
2
1
0
2.8
RG
VCE = 600 V
VGE 15 V
TVJ = 125°C
=
56
IC =
VCE = 600 V
VGE 15 V
TVJ = 125°C
15 A
IC
= 15 A
VCE = 600 V
Eon
=
=
2.4
2.0
1.6
1.2
VGE
[V]
E
Eoff
E
[mJ]
[mJ]
Eoff
Eon
0
0
10 20 30 40 50 60
0
10
20
30
40 60 80 100 120 140 160
IC [A]
QG [nC]
RG [ ]
Fig. 4 Typ. turn-on gate charge
Fig. 5 Typ. switching energy
vs. collector current
Fig. 6 Typ. switching energy
versus gate resistance
2
1
ZthJC
R
t
i
[K/W]
i
[K/W] [s]
1
2
3
4
0.252 0.0015
0.209 0.03
0.541 0.03
0.258 0.08
0.1
0.001
0.01
0.1
1
10
t [s]
Fig. 7 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20140129
© 2014 IXYS all rights reserved
MIXA20WB1200TMI
tentative
Inverter Diode
20
2.4
2.0
1.6
1.2
0.8
0.4
24
TVJ = 125°C
VR = 600 V
TVJ = 125°C
VR = 600 V
40 A
15
20
16
12
8
40 A
20 A
10 A
IC
10
[A]
IRR
[A]
Qrr
20 A
10 A
[μC]
TVJ = 125°C
5
25°C
0
0
1
2
3
200
300
400
500
200
300
400
500
-diF /dt [A/μs]
-diF /dt [A/μs]
VCE [V]
Fig. 2 Typ. reverse recovery
charge Qrr versus di/dt
Fig. 3 Typ. peak reverse current
IRM versus di/dt
Fig. 1 Typ. Forward current
versus VF
600
500
400
300
200
100
0.6
0.5
0.4
0.3
0.2
TVJ = 125°C
VR = 600 V
TVJ = 125°C
VR = 600 V
40 A
40 A
20 A
10 A
Erec
trr
20 A
10 A
[ns]
[mJ]
200
300
400
500
200
300
400
500
-diF /dt [A/μs]
-diF /dt [A/μs]
Fig. 5 Typ. recovery time
trr versus -diF /dt
Fig. 6 Typ. recovery energy
Erec versus -di/dt
Fig. 4 Dynamic parameters
Qr, IRM versus TVJ
10
ZthJC
1
[K/W]
Ri
ti
0.002
1
2
3
4
0.8
0.58 0.03
0.98 0.03
0.04 0.08
0.1
0.001
0.01
0.1
1
10
t [s]
Fig. 7 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20140129
© 2014 IXYS all rights reserved
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