MUBW2512T7 [IXYS]
Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, MODULE-24;型号: | MUBW2512T7 |
厂家: | IXYS CORPORATION |
描述: | Insulated Gate Bipolar Transistor, 45A I(C), 1200V V(BR)CES, N-Channel, MODULE-24 局域网 栅 开关 功率控制 晶体管 |
文件: | 总4页 (文件大小:90K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MUBW 25-12 T7
Converter - Brake - Inverter Module (CBI2)
with Trench IGBT technology
Preliminary data
21 22
D11 D13 D15
D7
16
D1
D3
D5
NTC
8
18
17
20
19
T1
T2
T3
T4
T5
T6
7
1
2
3
15
6
5
4
D2
D12 D14 D16
D4
D6
11
10
14
13
12
T7
9
23 24
ThreePhase BrakeChopper
Rectifier
ThreePhase
Inverter
VRRM = 1600 V VCES = 1200 V VCES = 1200 V
IFAVM = 38 A
IC25
= 30 A
IC25
= 45 A
IFSM = 300 A
VCE(sat) = 1.7 V
VCE(sat) = 1.7 V
Application: AC motor drives with
Input Rectifier Bridge D11 - D16
• Input from single or three phase grid
• Three phase synchronous or
asynchronous motor
Symbol
VRRM
Conditions
Maximum Ratings
1600
V
• electric braking operation
IFAV
IDAVM
IFSM
TC = 80°C; sine 180°
25
72
300
A
A
A
TC = 80°C; rectangular; d = 1/3; bridge
TVJ = 25°C; t = 10 ms; sine 50 Hz
Features
• High level of integration - only one power
semiconductor module required for the
whole drive
Ptot
TC = 25°C
100
W
• Inverter with Trench IGBTs
- low saturation voltage
- positive temperature coefficient
- fast switching
- short tail current
• Epitaxial free wheeling diodes with
Hiperfast and soft reverse recovery
• Industry standard package with insulated
copper base plate and soldering pins for
PCB mounting
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IF = 25 A; TVJ = 25°C
TVJ = 125°C
1.1
1.1
1.3
V
V
• Temperature sense included
IR
VR = VRRM;TVJ = 25°C
TVJ = 125°C
0.02 mA
mA
0.4
RthJC
(per diode)
1.3 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
1 - 4
MUBW 25-12 T7
Output Inverter T1 - T6
EquivalentCircuitsforSimulation
Conduction
Symbol
VCES
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
Continuous
1200
20
V
VGES
V
IC25
IC80
ICM
TC = 25°C
TC = 80°C
TC = 80°C; tp = 1 ms
45
25
50
A
A
A
IGBT (typ. at VGE = 15 V; TJ = 125°C)
T1-T6
Ptot
TC = 25°C
170
W
V0 = 0.92 V; R0 = 42.8 mΩ
Symbol
Conditions
Characteristic Values
T7
(TVJ = 25°C, unless otherwise specified)
V0 = 0.92 V; R0 = 72 mΩ
min.
typ. max.
VCE(sat)
IC = 25 A; VGE = 15 V; TVJ
=
25°C
1.7 2.15
2.0
V
V
Diode (typ. at TJ = 125°C)
TVJ = 125°C
D1-D6
V0 = tbd V; R0 = tbd mΩ
VGE(th)
ICES
IC = 1 mA; VGE = VCE
5
5.8
6.5
V
D7
VCE = VCES;VGE = 0 V; TVJ = 25°C
TVJ = 125°C
2.7 mA
mA
V0 = tbd V; R0 = tbd mΩ
0.7
D11-D16
IGES
Cies
QGon
VCE = 0 V; VGE
=
20 V
400 nA
nF
V0 = tbd V; R0 = tbd mΩ
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE= 600 V; VGE = 15 V; IC = 25 A
1.8
Thermal Response
240
nC
td(on)
tr
td(off)
tf
Eon
Eoff
90
50
520
90
2.5
3.4
ns
ns
ns
ns
mJ
mJ
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 25 A
VGE = 15 V; RG = 36 Ω
RBSOA
IC = ICM; VGE = 15 V
IGBT (typ.)
RG = 36 Ω; TVJ = 125°C
VCEK < VCES - LS di/dt
100
V
A
T1-T6
Cth1 = tbd J/K; Rth1 = tbd K/W
Cth2 = tbd J/K; Rth2 = tbd K/W
ISC
(SCSOA)
VCE = 720 V; VGE = 15 V; RG = 36 Ω;
tp < 10 µs; non-repetitive; TVJ = 125°C
T7
RthJC
(per IGBT)
0.73 K/W
Cth1 = tbd J/K; Rth1 = tbd K/W
Cth2 = tbd J/K; Rth2 = tbd K/W
Output Inverter D1 - D6
Diode (typ.)
D1-D6
Symbol
Conditions
Maximum Ratings
Cth1 = tbd J/K; Rth1 = tbd K/W
Cth2 = tbd J/K; Rth2 = tbd K/W
IF25
IF80
TC = 25°C
TC = 80°C
25
17
A
A
D7
Cth1 = tbd J/K; Rth1 = tbd K/W
Cth2 = tbd J/K; Rth2 = tbd K/W
Symbol
VF
Conditions
Characteristic Values
min. typ. max.
D11-D16
Cth1 = tbd J/K; Rth1 = tbd K/W
Cth2 = tbd J/K; Rth2 = tbd K/W
IF = 25 A; VGE = 0 V; TVJ = 25°C
TVJ = 125°C
2.1
1.6
2.6
V
V
IRM
Qrr
trr
tbd
tbd
tbd
tbd
A
µC
ns
IF = tbd A; diF/dt = -tbd A/µs; TVJ = 125°C
VR = 600 V; VGE = 0 V
Erec
mJ
RthJC
(per diode)
2.1 K/W
© 2006 IXYS All rights reserved
2 - 4
MUBW 25-12 T7
Brake Chopper T7
Symbol
VCES
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
Continuous
1200
20
V
V
VGES
IC25
IC80
ICM
TC = 25°C
TC = 80°C
TC = 80°C; tp = 1 ms
30
15
30
A
A
A
Ptot
TC = 25°C
120
W
Symbol
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
VCE(sat)
IC = 15 A; VGE = 15 V; TVJ
=
25°C
1.7
2.0
2.1
V
V
TVJ = 125°C
VGE(th)
ICES
IC = 0.5 mA; VGE = VCE
5
5.8
6.5
V
VCE = VCES;VGE = 0 V; TVJ = 25°C
TVJ = 125°C
0.1 mA
mA
0.25
IGES
Cies
QGon
VCE = 0 V; VGE
=
20 V
400 nA
nF
VCE = 25 V; VGE = 0 V; f = 1 MH z
VCE= 600 V; VGE = 15 V; IC = 15 A
1.1
150
nC
td(on)
tr
td(off)
tf
90
50
520
90
ns
ns
ns
ns
mJ
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 15 A
VGE = 15 V; RG = 75 Ω
Eoff
1.5
RBSOA
IC = ICM; VGE = 15 V
RG = 75 Ω; TVJ = 125°C
VCEK < VCES - LS di/dt
60
V
A
ISC
(SCSOA)
VCE = 720 V; VGE = 15 V; RG = 75 Ω
tp < 10 µs; non-repetitive; TVJ = 125°C
RthJC
1.05 K/W
Brake Chopper D7
Symbol
VRRM
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200
V
IF25
IF80
TC = 25°C
TC = 80°C
16
11
A
A
Symbol
VF
Conditions
Characteristic Values
min. typ. max.
IF = 65 A; TVJ
=
25°C
3.0
2.6
3.3
V
V
TVJ = 125°C
IR
VR = VRRM; TVJ 25°C
=
0.06 mA
mA
TVJ = 125°C
0.07
RthJC
3.2 K/W
© 2006 IXYS All rights reserved
3 - 4
MUBW 25-12 T7
Temperature Sensor NTC
Symbol
Conditions
Characteristic Values
min.
typ. max.
R25
B25/50
T = 25°C
4.75
5.0 5.25 kΩ
3375
K
Module
Symbol
Conditions
Maximum Ratings
TVJ
TJM
Tstg
operating
-40...+125
150
-40...+125
°C
°C
°C
VISOL
Md
IISOL ≤ 1 mA; 50/60 Hz
2500
V~
Mounting torque (M5)
2.7 - 3.3
Nm
Symbol
Conditions
Characteristic Values
min.
typ. max.
Rpin-chip
5
mΩ
dS
dA
Creepage distance on surface
Strike distance in air
6
6
mm
mm
RthCH
with heatsink compound
0.02
180
K/W
g
Weight
Dimensions in mm (1 mm = 0.0394")
© 2006 IXYS All rights reserved
4 - 4
相关型号:
MUBW40-12T7
Insulated Gate Bipolar Transistor, 62A I(C), 1200V V(BR)CES, N-Channel, MODULE-24
LITTELFUSE
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