VID50-12P1 [IXYS]
IGBT Modules; IGBT模块
| 型号： | VID50-12P1 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | IGBT Modules |
| 文件： | 总4页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VDI50-12P1 VII 50-12P1
VID50-12P1 VIO50-12P1
IC25
VCES
= 49 A
= 1200 V
IGBT Modules in ECO-PAC 2
Short Circuit SOA Capability
VCE(sat) typ. = 3.1 V
Square RBSOA
Preliminary data sheet
VII
VIO
VDI
VID
L9
X15
L9
X13
NTC
NTC
X16
E2
A
S
X15
L9
F1
B3
T16
X15
NTC
X16
K10
Pin arangement see outlines
X16
Features
IGBTs
• NPT IGBT's
- positive temperature coefficient of
saturation voltage
Symbol
VCES
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
1200
20
V
- fast switching
VGES
V
• FRED diodes
- fast reverse recovery
- low forward voltage
IC25
IC80
TC = 25°C
TC = 80°C
49
33
A
A
• Industry Standard Package
- solderable pins for PCB mounting
- isolated DCB ceramic base plate
ICM
VCEK
VGE = 15 V; RG = 47 Ω; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
50
VCES
A
µs
W
tSC
(SCSOA)
VCE = VCES; VGE
non-repetitive
=
15 V; RG = 47 Ω; TVJ = 125°C
10
Advantages
• space and weight savings
• reduced protection circuits
Ptot
TC = 25°C
208
• leads with expansion bend for stress relief
Symbol
Conditions
Characteristic Values
Typical Applications
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
• AC and DC motor control
• AC servo and robot drives
• power supplies
VCE(sat)
IC = 50 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
3.1
3.5
3.7
V
V
• welding inverters
VGE(th)
ICES
IC = 1 mA; VGE = VCE
4.5
6.5
V
VCE = VCES
;
VGE = 0 V; TVJ = 25°C
TVJ = 125°C
1.1 mA
4.2 mA
IGES
VCE = 0 V; VGE
=
20 V
180 nA
td(on)
tr
td(off)
tf
Eon
Eoff
100
70
500
70
4.6
3.4
ns
ns
ns
ns
mJ
mJ
Inductive load, TVJ = 125°C
VCE = 600 V; IC = 30 A
VGE = 15/0 V; RG = 47 Ω
Cies
VCE = 25 V; VGE = 0 V; f = 1 MHz
1.65
nF
RthJC
RthJH
(per IGBT)
with heatsink compound (0.42 K/m.K; 50 µm)
0.6 K/W
K/W
1.2
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
1 - 4
VDI50-12P1 VII 50-12P1
VID50-12P1 VIO50-12P1
VII
Reverse diodes (FRED)
Symbol
Conditions
Maximum Ratings
IF25
IF80
TC = 25°C
TC = 80°C
49
31
A
A
Symbol
VF
Conditions
Characteristic Values
min. typ. max.
IF = 30 A; TVJ = 25°C
TVJ = 125°C
2.4
2.7
V
V
1.77
IRM
trr
IF = 30 A; di /dt = 500 A/µs; TVJ = 125°C
VR = 600 V;FVGE = 0 V
27
150
A
ns
RthJC
RthJH
1.3 K/W
K/W
B3
with heatsink compound (0.42 K/m.K; 50 µm)
2.6
Temperature Sensor NTC
Symbol
Conditions
Characteristic Values
min. typ. max.
VIO
R25
B25/50
T = 25°C
4.75
5.0
3375
5.25 kΩ
K
Module
Symbol
Conditions
Maximum Ratings
TVJ
Tstg
-40...+150
-40...+150
°C
°C
VISOL
Md
IISOL ≤ 1 mA; 50/60 Hz
3000
V~
mounting torque (M4)
1.5 - 2.0
14 - 18
50
Nm
lb.in.
m/s2
a
Max. allowable acceleration
Symbol
Conditions
Characteristic Values
min. typ. max.
dS
dA
Creepage distance on surface (Pin to heatsink)
Strike distance in air (Pin to heatsink)
11.2
11.2
mm
mm
Weight
24
g
VID
VDI
Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
2 - 4
VDI50-12P1 VII 50-12P1
VID50-12P1 VIO50-12P1
80
80
VGE = 17V
A
A
VGE = 17 V
15V
13V
IC
15 V
13 V
IC 60
60
11V
9V
11V
9V
40
20
0
40
20
0
TVJ = 25°C
42T120
TVJ = 125°C
42T120
V
V
7
0
1
2
3
4
5
6
0
1
2
3
4
5
6
7
VCE
VCE
B3
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
50
80
A
A
IF
60
IC
VCE = 20V
30
20
10
0
TVJ = 125°C
TVJ = 25°C
40
20
0
TVJ = 125°C
TVJ = 25°C
10
42T120
42T120
V
0
1
2
3
4
4
6
8
12
VGE
14
16
V
VF
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
50
A
30
20
10
0
200
20
V
trr
ns
trr
15
IRM
VGE
120
80
40
0
10
5
TVJ = 125°C
VR = 600 V
IF = 15 A
VCE = 600V
IC
= 25A
IRM
42T120
42T120
0
0
200
400
600
-di/dt
A/µs 1000
0
40
80
120 nC 160
QG
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
3 - 4
VDI50-12P1 VII 50-12P1
VID50-12P1 VIO50-12P1
15
150
ns
12
mJ
8
600
VCE = 600 V
VGE 15 V
=
mJ
ns
RG = 47 Ω
TVJ = 125°C
td(off)
VCE = 600V
VGE 15V
Eoff
Eon
t
t
=
10
5
100
50
0
400
RG = 47Ω
TVJ = 125°C
Eoff
td(on)
tr
4
0
200
Eon
tf
42T120
42T120
0
0
60
A
0
20
40
IC
0
20
40
IC
A
60
B3
Fig. 7 Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current times
versus collector current
4
mJ
3
160
ns
8
800
td(off)
td(on)
mJ
ns
Eoff
Eon
120
6
4
2
0
600
t
Eoff
t
Eon
tr
2
1
0
80
40
0
400
200
0
VCE = 600 V
VCE = 600 V
VGE 15 V
VGE
= 15 V
=
IC = 25 A
IC = 25 A
TVJ = 125°C
TVJ = 125°C
tf
42T120
42T120
0
20
40
60
80 Ω 100
0
20
40
60
RG
80 Ω 100
RG
Fig. 9 Typ. turn on energy and switching
Fig. 10 Typ. turn off energy and switching
times versus gate resistor times
versus gate resistor
60
A
10
diode
IGBT
K/W
1
ZthJC
RG = 47 Ω
ICM
40
TVJ = 125°C
0,1
0,01
0,001
20
0
single pulse
MDI...50-12P1
42T120
0,0001
0,000010,0001 0,001 0,01
0,1
1
10
s
0
200 400 600 800 1000 1200 1400V
VCE
t
Fig. 11 Reverse biased safe operating area
Fig. 12 Typ. transient thermal impedance
RBSOA
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
4 - 4
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