VVZB135-16IOXT [IXYS]
Silicon Controlled Rectifier, 1600V V(RRM), 3 Element, ROHS COMPLIANT MODULE-22;
| 型号： | VVZB135-16IOXT |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Silicon Controlled Rectifier, 1600V V(RRM), 3 Element, ROHS COMPLIANT MODULE-22 局域网 栅 双极性晶体管 栅极 |
| 文件： | 总8页 (文件大小：573K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VVZB135-16ioXT
3~
Rectifier
Brake
Chopper
Thyristor Module
VRRM
VCES
= 1200
= 1600
IDAV
150
700
IC25
120
1,8
=
=
=
=
IFSM
VCE(sat)
3~ Rectifier Bridge, half-controlled (high-side) + Brake Unit + NTC
Part number
VVZB135-16ioXT
Backside: isolated
13
12
19/20
10/11
14
15
16
NTC
1
2/3
4/5
6/7
17
22
8/9
18 21
E2-Pack
Features / Advantages:
Applications:
Package:
● Package with DCB ceramic
● 3~ Rectifier with brake unit
for drive inverters
● Isolation Voltage:
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: DCB ceramic
● Reduced weight
V~
3600
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● NTC
● Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150914d
© 2015 IXYS all rights reserved
VVZB135-16ioXT
Ratings
Rectifier
Symbol
VRSM/DSM
Definition
Conditions
min. typ. max. Unit
TVJ = 25°C
TVJ = 25°C
TVJ = 25°C
TVJ = 150°C
TVJ = 25°C
1700
1600
100
V
V
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
VRRM/DRM
IR/D
VR/D =1600 V
VR/D =1600 V
IT = 50 A
IT = 150 A
IT = 50 A
IT = 150 A
TC = 85°C
rectangular
µA
reverse current, drain current
20 mA
forward voltage drop
1,32
V
V
V
V
A
VT
1,92
1,26
1,96
150
TVJ
=
°C
125
bridge output current
threshold voltage
TVJ = 150°C
TVJ = 150°C
IDAV
d = ⅓
0,88
V
VT0
for power loss calculation only
slope resistance
7,3 mΩ
0,65 K/W
K/W
rT
RthJC
RthCH
Ptot
ITSM
thermal resistance junction to case
thermal resistance case to heatsink
0,10
TC = 25°C
TVJ = 45°C
VR = 0 V
190
700
755
595
645
W
A
A
A
A
total power dissipation
max. forward surge current
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VR = 400V f = 1 MHz
tP = 30 µs
TVJ = 150°C
VR = 0 V
value for fusing
TVJ = 45°C
VR = 0 V
I²t
2,45 kA²s
2,37 kA²s
1,77 kA²s
1,73 kA²s
pF
TVJ = 150°C
VR = 0 V
junction capacitance
TVJ = 25°C
TC = 150°C
32
CJ
10
5
W
W
W
PGM
max. gate power dissipation
tP = 300 µs
0,5
PGAV
average gate power dissipation
critical rate of rise of current
TVJ = 150°C; f = 50 Hz
repetitive, IT = 150 A
150 A/µs
(di/dt)cr
0,45
tP = 200 µs;diG /dt =
A/µs;
IG = 0,45A; V = ⅔ VDRM
V = ⅔ VDRM
non-repet., IT = 50 A
TVJ = 150°C
500 A/µs
critical rate of rise of voltage
gate trigger voltage
1000 V/µs
(dv/dt)cr
VGT
RGK = ∞; method 1 (linear voltage rise)
VD = 6 V
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
TVJ = 150°C
1,4
1,6
V
V
gate trigger current
VD = 6 V
80 mA
IGT
200 mA
gate non-trigger voltage
gate non-trigger current
latching current
VD = ⅔ VDRM
0,2
5
V
VGD
IGD
IL
mA
10 µs
tp =
TVJ = 25°C
450 mA
IG = 0,45A; diG/dt = 0,45 A/µs
holding current
VD = 6 V RGK = ∞
TVJ = 25°C
TVJ = 25°C
100 mA
IH
gate controlled delay time
VD = ½ V
2
µs
µs
tgd
DRM
IG = 0,45A; diG/dt = 0,45 A/µs
turn-off time
VR = 100 V; IT = 50 A; V = ⅔ VDRM TVJ =125 °C
di/dt = 10 A/µs dv/dt = 20 V/µs µs
150
tq
tp = 200
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150914d
© 2015 IXYS all rights reserved
VVZB135-16ioXT
Ratings
Brake IGBT
Symbol
VCES
Definition
Conditions
min. typ. max. Unit
collector emitter voltage
TVJ
=
25°C
1200
20
V
V
max. DC gate voltage
VGES
VGEM
IC25
max. transient gate emitter voltage
collector current
30
V
TC = 25°C
TC = 80°C
TC = 25°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 25°C
TVJ = 125°C
120
84
A
A
IC80
total power dissipation
390
2,1
W
V
P
tot
collector emitter saturation voltage
IC = 75 A; VGE = 15 V
1,8
2,1
6,0
VCE(sat)
V
gate emitter threshold voltage
collector emitter leakage current
IC = 3 mA; VGE = VCE
VCE = VCES; VGE = 0 V
5,5
6,5
V
VGE(th)
ICES
0,2 mA
mA
0,6
gate emitter leakage current
total gate charge
VGE = 20 V
500
nA
nC
ns
IGES
VCE = 600 V; V = 15 V; IC = 75 A
GE
230
70
QG(on)
td(on)
tr
turn-on delay time
current rise time
40
ns
inductive load
TVJ = 125°C
turn-off delay time
250
100
6,8
8,3
ns
td(off)
tf
VCE =600 V; IC = 75 A
VGE = 15 V; RG = 10 Ω
current fall time
ns
turn-on energy per pulse
turn-off energy per pulse
reverse bias safe operating area
mJ
mJ
Eon
Eoff
VGE = 15 V; RG = 10 Ω
TVJ = 125°C
TVJ = 125°C
RBSOA
ICM
VCEK = 1200 V
225
10
A
short circuit safe operating area
short circuit duration
SCSOA
tSC
VCEK = 1200 V
VCE = 900 V; V = 15 V
GE
µs
A
short circuit current
RG = 10 Ω; non-repetitive
300
ISC
thermal resistance junction to case
thermal resistance case to heatsink
0,32 K/W
K/W
RthJC
RthCH
0,15
Brake Diode
max. repetitive reverse voltage
TVJ = 25°C
TC = 25°C
1200
48
V
A
A
V
V
VRRM
IF25
IF80
VF
forward current
forward voltage
reverse current
32
TC = 80°C
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
IF = 30 A
2,75
1,99
V = VRRM
R
0,25 mA
IR
1
mA
µC
A
reverse recovery charge
max. reverse recovery current
reverse recovery time
VR = 600 V
-diF /dt = 400A/µs
IF = 30A
1,8
23
Qrr
IRM
trr
TVJ = 125°C
150
ns
thermal resistance junction to case
thermal resistance case to heatsink
0,9 K/W
K/W
RthJC
RthCH
0,3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150914d
© 2015 IXYS all rights reserved
VVZB135-16ioXT
Ratings
Package E2-Pack
Symbol
IRMS
Definition
Conditions
min. typ. max. Unit
per terminal
200
150
125
125
A
°C
°C
°C
g
RMS current
-40
-40
-40
TVJ
virtual junction temperature
Top
operation temperature
storage temperature
Tstg
176
Weight
MD
3
6
Nm
mounting torque
terminal to terminal
terminal to backside
6,0
12,0
mm
mm
V
dSpp/App
dSpb/Apb
creepage distance on surface | striking distance through air
t = 1 second
3600
3000
V
isolation voltage
ISOL
50/60 Hz, RMS; IISOL ≤ 1 mA
t = 1 minute
V
2D Data Matrix
XXXXXXXXXX yywwx
Logo
UL Part number Date Code Location
Ordering
Standard
Ordering Number
Marking on Product
VVZB135-16ioXT
Delivery Mode
Quantity Code No.
VVZB135-16ioXT
Box
6
510134
105
Temperature Sensor NTC
Symbol Definition
Conditions
min. typ. max. Unit
104
resistance
TVJ = 25°
4,75
5
5,25
kΩ
R25
R
temperature coefficient
3375
K
B25/50
[
]
103
TVJ = 150°C
Equivalent Circuits for Simulation
* on die level
Thyristor
Brake
IGBT
Brake
Diode
V0
102
I
R0
0
25
50
75
100 125 150
TC [°C]
threshold voltage
slope resistance *
0,88
4,1
1,1
1,31
8
V
V0 max
R0 max
Typ. NTC resistance vs. temperature
17,9
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150914d
© 2015 IXYS all rights reserved
VVZB135-16ioXT
Outlines E2-Pack
Dimensions w/o tolerances
acc. DIN ISO 2768-T1-m
13
12
19/20
10/11
14
15
16
NTC
1
2/3
4/5
6/7
17
22
8/9
18 21
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150914d
© 2015 IXYS all rights reserved
VVZB135-16ioXT
Thyristor
160
600
500
10000
120
TVJ = 45°C
I2t
1000
TVJ= 45°C
IF
I
FSM 400
80
TVJ= 150°C
[A]
[A2s]
[A]
TVJ = 150°C
TVJ = 150°C
40
0
300
200
TVJ = 125°C
TVJ 25°C
=
50Hz, 80% VRRM
0.01
100
0.5
1.0
1.5
2.0
1
2
3
4 5 6 7 8 9
0.001
0.1
1
t [ms]
t [s]
VF [V]
Fig. 3 I2t vs. time per thyristor
Fig. 1 Forward current vs.
voltage drop per thyristor
Fig. 2 Surge overload current
vs. time per thyristor
10
1000
100
140
120
100
1: I
, T = 150°C
25°C
GD VJ
2: I , T
GT VJ
=
DC =
1
3: I , T = -40°C
GT VJ
6
0.5
5
0.4
4
3
0.33
0.17
0.08
IT(AV)M
2
VG
[V]
Limit
typ.
tgd
80
60
40
20
0
1
1
[A]
[μs]
10
T
= 125°C
VJ
4: P
= 0.5 W
GAV
GM
GM
5: P
6: P
=
1 W
= 10 W
0.1
1
10
1
10
100
1000 10000
100
IG [mA]
1000
0
25 50 75 100 125 150 175
TC [°C]
IG [mA]
Fig. 5 Gate controlled delay time
Fig. 4 Gate trigger characteristics
Fig. 5 Max. forward current vs.
case temperature per thyristor
100
80
0.8
RthA
:
DC =
1
0.2 K/W
0.4 K/W
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
0.5
0.4
0.6
ZthJC
0.4
[K/W]
0.33
0.17
0.08
Ptot
60
40
20
0
[W]
Constants for ZthJC calc.:
i
Rth (K/W)
ti (s)
1
2
3
4
5
0.080
0.030
0.160
0.160
0.247
0.004
0.010
0.025
0.400
0.090
0.2
0.0
0
20
40
IT(AV)M [A]
Fig. 4 Power dissipation vs. forward current
and ambient temperature per thyristor
60
0
50
100
150
1
10
100
t [ms]
1000
10000
Tamb [°C]
Fig. 6 Transient thermal impedance junction to case
vs. time per thyristor
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150914d
© 2015 IXYS all rights reserved
VVZB135-16ioXT
Brake IGBT
150
150
125
100
75
150
VGE = 15 V
13V
VGE = 15 V
17 V
19 V
11V
125
100
75
50
25
0
125
100
75
50
25
0
TVJ = 25°C
IC
IC
IC
TVJ = 125°C
[A]
[A]
[A]
9 V
50
TVJ = 125°C
TVJ = 125°C
25
TVJ = 25°C
0
0
1
2
3
0
1
2
3
4
5
6
7
8
9
10 11 12 13
VGE [V]
Fig. 3 Typ. tranfer characteristics
VCE [V]
Fig. 1 Typ. output characteristics
VCE [V]
Fig. 2 Typ. output characteristics
20
16
10
RG = 10
CE = 600 V
VGE 15 V
IC
=
75 A
V
VCE = 600 V
9
8
7
6
5
=
15
10
5
12
8
TVJ = 125°C
Eoff
VGE
[V]
E
E
[mJ]
[mJ]
Eon
Eoff
IC =
VCE = 600 V
VGE 15 V
75 A
4
Eon
=
TVJ = 125°C
0
0
0
100
QG [nC]
Fig. 4 Typ. turn-on gate charge
200
300
0
40
80
120
160
8
12
16
20 24
RG [ ]
IC [A]
Fig. 5 Typ. switching energy
versus collector current
Fig. 6 Typ. switching energy
versus gate resistance
1
ZthJC
0.1
[K/W]
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
t [s]
Fig. 7 Typ. transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150914d
© 2015 IXYS all rights reserved
VVZB135-16ioXT
Brake Diode
80
5
4
3
2
1
0
60
50
40
30
20
10
0
TVJ = 125°C
VR = 800 V
70
60
IF = 60 A
30 A
15 A
IF = 60 A
50
30 A
15 A
IF
IRM
[A]
Qr
40
TVJ = 125°C
25°C
[A]
[μC]
30
20
10
0
TVJ = 125°C
VR = 800 V
0
1
2
3
100
1000
0
200 400 600 800 1000
VF [V]
-diF /dt [A/μs]
-diF /dt [A/μs]
Fig. 2 Typ. reverse recovery charge
Qr versus -diF /dt
Fig. 3 Typ. peak reverse current
IRM versus -diF /dt
Fig. 1 Forward current IF vs. VF
2.0
1.5
1.0
0.5
0.0
220
120
100
80
60
40
20
0
1.2
TVJ = 125°C
VR = 800 V
TVJ = 125°C
IF 30 A
1.0
0.8
200
=
IF = 60 A
30 A
15 A
180
160
140
120
trr
VFR
[V]
trr
[μs]
Kf
[ns]
0.4
0.2
0.
IRM
QR
trr
VFR
0
40
80
120
160
0
200 400 600 800 1000
0
200 400 600 800 1000
TVJ [°C]
-diF /dt [A/μs]
-diF /dt [A/μs]
Fig. 4 Dynamic parameters
Qr, IRM versus TVJ
Fig. 5 Typ. recovery time
trr versus -diF /dt
Fig. 6 Typ. peak forward voltage
VFR and tfr versus diF/dt
1
ZthJC
0.1
i
R
t
i
[s]
i
[K/W]
[K/W]
1
2
3
0.465 0.0052
0.179 0.0003
0.256 0.0397
0.01
0.001
0.01
0.1
1
t [s]
Fig. 7 Transient thermal impedance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20150914d
© 2015 IXYS all rights reserved
相关型号：
VVZB135-16NO1
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System
IXYS
VVZB135-16NO1
Silicon Controlled Rectifier, 211.95A I(T)RMS, 1600V V(RRM), 3 Element, MODULE-22
LITTELFUSE
©2020 ICPDF网 联系我们和版权申明