3DD13002 [JCST]
TRANSISTOR (NPN); 晶体管（ NPN ）
| 型号： | 3DD13002 |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | TRANSISTOR (NPN) |
| 文件： | 总1页 (文件大小：35K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DD13002/ 3DD13002B TRANSISTOR (NPN)
TO-92
FEATURE
Power dissipation
1. EMITTER
2. COLLECTOR
3. BASE
PCM:
900
mW (Tamb=25℃)
Collector current
ICM:
3DD13002:
1
A
1 2 3
3DD13002B: 0.8
A
Collector-base voltage
V(BR)CBO:
600
V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic=100µA, IE=0
Ic= 1mA, IB=0
MIN
600
400
6
TYP
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
IE= 100µA, IC=0
VCB= 600V, IE=0
100
100
40
µA
µA
IEBO
VEB= 6V, IC=0
Emitter cut-off current
hFE(1)
VCE= 10V, IC= 200 mA
VCE= 10V, IC= 10 mA
IC=200mA, IB= 40 mA
IC=200mA, IB=40 mA
9
6
hFE(2)
VCE(sat)
VBE(sat)
0.5
1.1
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE=10V, Ic=100mA
f =1MHz
fT
5
MHz
Transition frequency
tf
0.5
2.5
µs
µs
Fall time
IC=1A, IB1=-IB2=0.2A
VCC=100V
ts
Storage time
CLASSIFICATION OF hFE
(1)
9-15
15-20
20-25
25-30
30-35
35-40
Range
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