B772O(TO-251) [JCST]
Transistor;
| 型号： | B772O(TO-251) |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：327K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251 Plastic-Encapsulate Transistors
TO-251
B772 TRANSISTOR (PNP)
FEATURES
Low Speed Switching
1. EMITTER
2. COLLECTOR
3 BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
-40
-30
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
-6
V
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance, junction to Ambient
Junction Temperature
-3
A
PC
1.25
100
150
-55-150
W
RӨJA
Tj
℃/W
℃
Tstg
Storage Temperature
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
Min
-40
Typ
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
IC=-100μA ,IE=0
IC= -10mA , IB=0
IE= -100μA,IC=0
VCB= -40V, IE=0
VCE=-30V, IB=0
VEB=-6V, IC=0
-30
-6
V
V
-1
-10
-1
μA
μA
μA
Collector cut-off current
ICEO
Emitter cut-off current
IEBO
DC current gain
hFE
VCE= -2V, IC= -1A
IC=-2A, IB= -0.2A
60
50
400
-0.5
Collector-emitter saturation voltage
VCE(sat)
V
V
Base-emitter saturation voltage
VBE(sat)
IC=-2A, IB= -0.2A
-1.5
VCE= -5V, IC=-0.1A
f =10MHz
Transition frequency
80
MHz
fT
CLASSIFICATION OF hFE
Rank
R
O
Y
GR
Range
60-120
100-200
160-320
200-400
A,Jun,2011
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