S9018WL [JCST]
Transistor;
| 型号： | S9018WL |
| 厂家： | 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD |
| 描述： | Transistor |
| 文件： | 总1页 (文件大小：239K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Transistors
S9018W TRANSISTOR (NPN)
SOT–323
FEATURES
Small Surface Mount Package
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Unit
V
Collector-Base Voltage
30
15
1. BASE
Collector-Emitter Voltage
Emitter-Base Voltage
V
2. EMITTER
3. COLLECTOR
5
V
Collector Current
50
mA
mW
℃/W
℃
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
200
PC
625
RΘJA
Tj
150
Storage Temperature
Tstg
-55～+150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
V(BR)CBO
IC=100µA, IE=0
30
V
Collector-base breakdown voltage
V(BR)CEO
V(BR)EBO
ICBO
IC=1mA, IB=0
IE=100µA, IC=0
VCB=12V, IE=0
VCE=12V, IB=0
VEB=3V, IC=0
15
5
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
50
nA
nA
nA
ICEO
100
100
190
0.5
1.4
Collector cut-off current
IEBO
Emitter cut-off current
hFE
VCE=5V, IC=1mA
70
DC current gain
VCE(sat)
VBE(sat)
fT
IC=10mA, IB=1mA
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
IC=10mA, IB=1mA
VCE=5V,IC=5mA , f=400MHz
VCB=10V, IE=0, f=1MHz
600
MHz
pF
Cob
2
Collector output capacitance
CLASSIFICATION OF hFE
RANK
L
H
105–190
J8
RANGE
70–105
MARKING
A,Oct,2010
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