2SB824 [JMNIC]
Silicon PNP Power Transistors;型号: | 2SB824 |
厂家: | QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
描述: | Silicon PNP Power Transistors |
文件: | 总4页 (文件大小:211K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon PNP Power Transistors
2SB824
DESCRIPTION
·With TO-220 package
·Low collector-emitter saturation voltage
·Complement to type 2SD1060
APPLICATIONS
·Suitable for relay drivers,high-speed
Inverters,converters,and other general
large-current switching applications
PINNING
PIN
1
DESCRIPTION
Emitter
Collector;connected to
mounting base
2
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
CONDITIONS
Open emitter
VALUE
-60
UNIT
V
Open base
-50
V
Open collector
-6
V
Collector current (DC)
Collector current (Pulse)
Collector power dissipation
Junction temperature
Storage temperature
-5
A
ICP
-9
A
PC
TC=25℃
30
W
℃
℃
Tj
150
-55~150
Tstg
JMnic
Product Specification
Silicon PNP Power Transistors
2SB824
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
IC=-1mA ;RBE=∞
MIN
-50
-60
-6
TYP.
MAX
UNIT
V
IC=-1mA ;IE=0
V
IE=-1mA ;IC=0
V
IC=-3A; IB=-0.3A
VCB=-40V;IE=0
-0.4
-0.1
-0.1
280
V
mA
mA
IEBO
VEB=-4V; IC=0
hFE-1
DC current gain
IC=-1A ; VCE=-2V
IC=-3A ; VCE=-2V
IE=0 ; VCB=-10V;f=1MHz
IC=-1A ; VCE=-5V
70
30
hFE-2
DC current gain
COB
Output capacitance
160
30
pF
fT
Transition frequency
MHz
Switching times
ton Turn-on time
ts
0.1
0.7
0.2
μs
μs
μs
IC=-2.0A; IB1=- IB2=-0.2A
Storage time
Fall time
tf
hFE-1 classifications
Q
R
S
70-140
100-200
140-280
2
JMnic
Product Specification
Silicon PNP Power Transistors
2SB824
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SB824
4
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