BLF175_15 [JMNIC]
HF/VHF power MOS transistor;
| 型号： | BLF175_15 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | HF/VHF power MOS transistor |
| 文件： | 总18页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF175
HF/VHF power MOS transistor
September 1992
Product specification
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
FEATURES
PIN CONFIGURATION
• High power gain
• Low intermodulation distortion
• Easy power control
• Good thermal stability
• Withstands full load mismatch
ook, halfpage
1
4
• Gold metallization ensures
excellent reliability.
d
g
DESCRIPTION
s
MBB072
Silicon N-channel enhancement
mode vertical D-MOS transistor
designed for large signal amplifier
applications in the HF/VHF frequency
range.
2
3
MSB057
The transistor has a 4-lead, SOT123
flange envelope, with a ceramic cap.
All leads are isolated from the flange.
Fig.1 Simplified outline and symbol.
A marking code, showing gate-source
voltage (VGS) information is provided
for matched pair applications. Refer
to the 'General' section for further
information.
CAUTION
The device is supplied in an antistatic package. The gate-source input must
be protected against static charge during transport and handling.
WARNING
PINNING - SOT123
Product and environmental safety - toxic materials
PIN
DESCRIPTION
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
1
2
3
4
drain
source
gate
source
QUICK REFERENCE DATA
RF performance at Th = 25 °C in a common source test circuit.
MODE OF
OPERATION
f
VDS
(V)
IDQ
(mA)
PL
(W)
GP
(dB)
ηD
(%)
d3
(dB)
(MHZ)
class-A
28
28
50
50
800
150
8 (PEP)
> 24
−
< −40
class-AB
30 (PEP)
typ. 24
typ. 40
(note 1)
typ. −35
CW, class-B
108
50
30
30
typ. 20
typ. 65
−
Note
1. 2-tone efficiency.
September 1992
2
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN.
MAX.
UNIT
−
−
−
−
110
20
V
±VGS
ID
gate-source voltage
DC drain current
V
4
A
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
up to Tmb = 25 °C
68
W
°C
°C
−65
150
200
−
THERMAL RESISTANCE
SYMBOL
THERMAL
RESISTANCE
PARAMETER
CONDITIONS
Rth j-mb
Rth mb-h
thermal resistance from junction to mounting base
thermal resistance from mounting base to heatsink
Tmb = 25 °C; Ptot = 68 W
Tmb = 25 °C; Ptot = 68 W
2.6 K/W
0.3 K/W
MRA905
MGP063
10
100
handbook, halfpage
handbook, halfpage
P
tot
(W)
80
I
D
(A)
(2)
(1)
60
40
20
(1)
(2)
1
−1
10
0
0
2
1
10
10
40
80
120
160
V
(V)
T
(°C)
DS
h
(1) Current is this area may be limited by RDS(on)
.
(1) Continuous operation.
(2) Short-time operation during mismatch.
(2) Tmb = 25 °C.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
September 1992
3
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
V(BR)DSS
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
ID = 10 mA; VGS = 0
VGS = 0; VDS = 50 V
±VGS = 20 V; VDS = 0
ID = 10 mA; VDS = 10 V
110
−
−
−
−
−
−
−
V
IDSS
100
1
µA
µA
V
IGSS
−
VGS(th)
∆VGS
2
4.5
100
gate-source voltage difference of ID = 10 mA; VDS = 10 V
matched pairs
−
mV
gfs
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
ID = 1 A; VDS = 10 V
1.1
−
1.6
−
S
RDS(on)
IDSX
Cis
ID = 1 A; VGS = 10 V
0.75 1.5
Ω
VGS = 10 V; VDS = 10 V
−
5.5
130
36
−
−
−
−
A
VGS = 0; VDS = 50 V; f = 1 MHz
VGS = 0; VDS = 50 V; f = 1 MHz
VGS = 0; VDS = 50 V; f = 1 MHz
−
pF
pF
pF
Cos
output capacitance
−
Crs
feedback capacitance
−
3.7
MGP065
MGP064
0
6
handbook, halfpage
T.C.
handbook, halfpage
(mV/K)
I
D
−1
(A)
4
−2
−3
2
−4
−5
0
0
−2
−1
10
10
1
5
10
I
(A)
V
(V)
D
GS
VDS = 10 V.
VDS = 10 V; Tj = 25 °C.
Fig.4 Temperature coefficient of gate-source
voltage as a function of drain current, typical
values.
Fig.5 Drain current as a function of gate-source
voltage, typical values.
September 1992
4
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
MGP066
MGP067
1.5
400
handbook, halfpage
handbook, halfpage
C
(pF)
R
DS(on)
(Ω)
300
200
100
1
C
is
0.5
C
os
0
0
0
0
50
100
150
10
20
30
40
V
50
(V)
T (°C)
j
DS
ID = 1 A; VGS = 10 V.
VGS = 0; f = 1 MHz.
Fig.6 Drain-source on-state resistance as a
function of junction temperature, typical
values.
Fig.7 Input and output capacitance as functions
of drain-source voltage, typical values.
MGP068
150
handbook, halfpage
C
rs
(pF)
100
50
0
0
10
20
30
40
V
50
(V)
DS
VGS = 0; f = 1 MHz.
Fig.8 Feedback capacitance as a function of
drain-source voltage, typical values.
September 1992
5
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
APPLICATION INFORMATION FOR CLASS-A OPERATION
Th = 25 °C; Rth mb-h = 0.3 K/W; unless otherwise specified.
RF performance in SSB operation in a common source circuit.
f1 = 28.000 MHz; f2 = 28.001 MHz.
d3
(dB)
(note 1)
d5
(dB)
(note 1)
PL
(W)
f
VDS
(V)
IDQ
(mA)
GP
(dB)
RGS
(Ω)
(MHz)
0 to 8 (PEP)
28
50
800
> 24
typ. 28
> −40
typ. −44
< −40
typ. −64
24
24
Note
1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are
referred to the according level of either the equal amplified tones. Related to the according peak envelope power
these figures should be decreased by 6 dB.
MGP069
MGP070
40
0
handbook, halfpage
handbook, halfpage
d
G
p
3
(dB)
(dB)
30
−20
20
10
−40
−60
0
0
−80
5
10
15
P
20
(W) PEP
0
5
10
15
P
20
(W) PEP
L
L
Class-A operation; VDS = 50 V; IDQ = 0.8 A;
Class-A operation; VDS = 50 V; IDQ = 0.8 A;
RGS = 24 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
solid line: Th = 25 °C.
RGS = 24 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
solid line: Th = 25 °C.
dotted line: Th = 70 °C.
dotted line: Th = 70 °C.
Fig.9 Power gain as a function of load power,
typical values.
Fig.10 Third order intermodulation distortion as a
function of load power, typical values.
September 1992
6
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
MGP071
MGP072
40
−20
handbook, halfpage
handbook, halfpage
G
p
(dB)
d
3
(dB)
30
20
10
0
−40
−60
0
10
20
30
40
0
10
20
30
40
f (MHz)
f (MHz)
Class-A operation; VDS = 50 V; IDQ = 0.8 A;
Class-A operation; VDS = 50 V; IDQ = 0.8 A;
PL = 8 W (PEP); RGS = 24 Ω; f1 − f2 = 1 MHz.
PL = 8 W (PEP); RGS = 24 Ω; f1 − f2 = 1 MHz.
Fig.11 Power gain as a function of frequency,
typical values.
Fig.12 Third order intermodulation distortion as a
function of frequency, typical values.
C4
R2
C5
D.U.T.
L4
50 Ω
output
C2
T1
50 Ω
input
C9
C1
L2
R1
C6
C7
L1
C3
R3
L3
C8
+V
G
+V
MGP073
D
f = 28 MHz.
Fig.13 Test circuit for class-A operation.
September 1992
7
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
List of components (class-A test circuit)
COMPONENT
C1
DESCRIPTION
VALUE
39 pF
DIMENSIONS
CATALOGUE NO.
multilayer ceramic chip capacitor
(note 1)
C2
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
aluminium electrolytic capacitor
3 × 10 nF
100 nF
2222 852 47103
2222 852 47104
2222 852 47103
2222 852 47104
2222 030 28109
C3, C4, C6
C5
C7
C8
C9
10 nF
3 × 100 nF
10 µF, 63 V
24 pF
multilayer ceramic chip capacitor
(note 1)
L1
L2
4 turns enamelled 0.6 mm copper
wire
86 nH
length 3.3 mm;
int. dia. 5 mm;
leads 2 x 2 mm
36 turns enamelled 0.7 mm copper 20 µH
wire wound on a rod grade 4B1
Ferroxcube drain choke
length 30 mm;
int. dia. 5 mm
4330 030 30031
4312 020 36640
L3
L4
grade 3B Ferroxcube wideband RF
choke
8 turns enamelled 1 mm copper wire 189 nH
length 9.5 mm;
int. dia. 5 mm;
leads 2 x 3 mm
R1
R2
R3
T1
0.4 W metal film resistor
0.4 W metal film resistor
0.4 W metal film resistor
24 Ω
1500 Ω
10 Ω
4 : 1 transformer; 18 turns twisted
pair of 0.25 mm copper wire with
10 twists per cm, wound on a grade
4C6 toroidal core
dimensions
9 x 6 x 3 mm
4322 020 97171
Note
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
September 1992
8
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
100
mounting screw
90
strap
strap
L3
+V
DD
+V
G
C7
L1
C6
C8
R3
C3
L2
R1
L4
T1
C5
C2
C9
C1
R2
C4
MGP074
Note: The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being
fully metallized to serve as earth. Earth connections are made by means of hollow rivets and straps at the two
edges and under the source contacts.
Fig.14 Component layout for 28 MHz class-A test circuit.
9
September 1992
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
APPLICATION INFORMATION FOR CLASS-AB OPERATION
Th = 25 °C; Rth mb-h = 0.3 K/W; unless otherwise specified.
RF performance in SSB operation in a common source circuit.
f1 = 28.000 MHz; f2 = 28.001 MHz.
d3
(dB)
(note 1)
d5
(dB)
(note 1)
PL
(W)
f
VDS
(V)
IDQ
(mA)
GP
(dB)
ηD
(%)
RGS
(Ω)
(MHz)
30 (PEP)
28
50
150
typ. 24
typ. 40
typ. −35
typ. −40
22
(note 2)
Notes
1. Stated figures are maximum values encountered at
any driving level between the specified value of PEP
and are referred to the according level of either the
equal amplified tones. Related to the according peak
envelope power these figures should be decreased by
6 dB.
2. 2-tone efficiency.
Ruggedness in class-AB operation
The BLF175 is capable of withstanding a load mismatch
corresponding to VSWR = 50 through all phases at
PL = 30 W single tone under the following conditions:
VDS = 50 V; f = 28 MHz.
MGP076
MGP077
28
60
handbook, halfpage
handbook, halfpage
η
G
p
(dB)
D
(%)
26
50
24
22
20
40
30
20
0
0
20
40
60
20
40
60
P
(W) PEP
P (W) PEP
L
L
Class-AB operation; VDS = 50 V; IDQ = 0.15 A;
RGS = 22 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
Class-AB operation; VDS = 50 V; IDQ = 0.15 A;
RGS = 22 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
Fig.16 Two tone efficiency as a function of load
power, typical values.
Fig.15 Power gain as a function of load power,
typical values.
September 1992
10
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
MGP078
MGP079
0
0
handbook, halfpage
handbook, halfpage
d
5
d
3
(dB)
(dB)
−20
−20
−40
−60
−40
−60
0
20
40
60
0
20
40
60
P
(W) PEP
P
(W) PEP
L
L
Class-AB operation; VDS = 50 V; IDQ = 0.15 A;
GS = 22 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
Class-AB operation; VDS = 50 V; IDQ = 0.15 A;
RGS = 22 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.
R
Fig.17 Third order intermodulation distortion as a
function of load power, typical values.
Fig.18 Fifth order intermodulation distortion as a
function of load power, typical values.
C10
C7
C1
D.U.T.
L3
C11
L5
C3
50 Ω
output
C2
L2
L1
50 Ω
output
C8
L4
C4
R1
R3
+V
D
C5
L6
C6
C12
R2
C9
MGP080
+V
G
f = 28 MHz.
Fig.19 Test circuit for class-AB operation.
September 1992
11
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
List of components (class-AB test circuit)
COMPONENT
C1, C10
DESCRIPTION
VALUE
62 pF
DIMENSIONS
CATALOGUE NO.
multilayer ceramic chip capacitor
(note 1)
C2, C4, C8, C11
C3
film dielectric trimmer
5 to 60 pF
51 pF
2222 809 07011
2222 852 47104
2222 030 28109
multilayer ceramic chip capacitor
(note 1)
C5, C6, C9
C7
multilayer ceramic chip capacitor
100 nF
10 pF
multilayer ceramic chip capacitor
(note 1)
C12
L1
aluminium electrolytic capacitor
10 µF, 63 V
9 turns enamelled 1 mm copper wire 280 nH
length 11 mm;
int. dia. 6 mm;
leads 2 x 4 mm
L2, L3
L4
stripline (note 2)
30 Ω
length 10 mm;
width 6 mm
14 turns enamelled 1 mm copper
wire
1650 nH
length 20 mm;
int. dia. 12 mm;
leads 2 x 2 mm
L5
L6
10 turns enamelled 1 mm copper
wire
380 nH
length 13 mm;
int. dia. 7 mm;
leads 2 x 3 mm
grade 3B Ferroxcube wideband RF
choke
4312 020 36640
R1
R2
R3
0.4 W metal film resistor
0.4 W metal film resistor
0.4 W metal film resistor
22 Ω
1 MΩ
10 Ω
Notes
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.
2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 4.5),
thickness 1.6 mm.
September 1992
12
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
150
mounting screw
strap
strap
strap
rivet
70
R3
L6
C9
C6
C12
R2
C5
L4
L5
R1
L1
L2
L3
C1
C3
C10
C7
C8
C11
C2
C4
MGP081
Note: The circuit and components are situated on one side of the epoxy fibre-glass board, the other side being
fully metallized to serve as earth. Earth connections are made by means of hollow rivets and straps at the two
edges and under the source contacts.
Dimensions in mm.
Fig.20 Component layout for 28 MHz class-AB test circuit.
13
September 1992
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
MGP084
MGP083
30
50
handbook, halfpage
handbook, halfpage
Z
Z
i
L
(Ω)
(Ω)
20
40
r
i
R
L
10
0
30
20
10
x
i
−10
−20
X
L
0
0
0
10
20
30
40
10
20
30
f (MHz)
f (MHz)
Class-AB operation; VDS = 50 V; IDQ = 0.15 A;
Class-AB operation; VDS = 50 V; IDQ = 0.15 A;
PL = 30 W (PEP); RGS = 22 Ω.
PL = 30 W (PEP); RGS = 22 Ω.
Fig.21 Input impedance as a function of frequency
(series components), typical values.
Fig.22 Load impedance as a function of frequency
(series components), typical values.
MGP085
30
handbook, halfpage
G
p
(dB)
20
10
0
0
10
20
30
f (MHz)
Class-AB operation; VDS = 50 V; IDQ = 0.15 A;
PL = 30 W (PEP); RGS = 22 Ω.
Fig.23 Power gain as a function of frequency,
typical values.
September 1992
14
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
APPLICATION INFORMATION FOR CLASS-AB OPERATION
RF performance in SSB operation in a common source circuit.
MODE OF
OPERATION
f
VDS
(V)
IDQ
(mA)
PL
(W)
GP
(dB)
ηD
(%)
RGS
(Ω)
(MHz)
CW, class-B
108
50
30
30
typ. 20
typ. 65
10
MGP086
MGP087
10
50
handbook, halfpage
handbook, halfpage
Z
L
Z
i
(Ω)
(Ω)
40
5
r
i
30
20
10
X
R
L
0
L
x
i
−5
0
0
0
100
200
100
200
f (MHz)
f (MHz)
Class-B operation; VDS = 50 V; IDQ = 30 mA;
Class-B operation; VDS = 50 V; IDQ = 30 mA;
PL = 30 W; RGS = 10 Ω.
PL = 30 W; RGS = 10 Ω.
Fig.24 Input impedance as a function of frequency
(series components), typical values.
Fig.25 Load impedance as a function of frequency
(series components), typical values.
September 1992
15
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
MGP088
30
handbook, halfpage
G
p
(dB)
20
10
0
0
100
200
f (MHz)
Class-B operation; VDS = 50 V; IDQ = 30 mA;
PL = 30 W; RGS = 10 Ω.
Fig.26 Power gain as a function of frequency,
typical values.
September 1992
16
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
SOT123A
D
A
F
q
C
M
B
U
1
w
2
C
c
H
b
L
4
3
A
α
p
U
3
U
2
w
M
A
B
1
1
2
H
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
c
A
b
D
D
F
H
L
p
Q
q
U
U
U
w
w
2
α
UNIT
mm
1
1
2
3
1
5.82
5.56
9.63
9.42
7.47
6.37
9.73
9.47
2.72 20.71 5.61
2.31 19.93 5.16
3.33
3.04
4.63
4.11
25.15 6.61
24.38 6.09
9.78
9.39
0.18
0.10
18.42
0.725
0.51 1.02
0.02 0.04
45°
0.229
0.219
0.397
0.371
0.294
0.251
0.383
0.373
0.107 0.815 0.221 0.131
0.091 0.785 0.203 0.120
0.26 0.385
0.24 0.370
0.007
0.004
0.182
0.162
0.99
0.96
inches
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT123A
97-06-28
September 1992
17
Philips Semiconductors
Product specification
HF/VHF power MOS transistor
BLF175
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1992
18
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