KF5N65D [KEC]
N CHANNEL MOS FIELD EFFECT TRANSISTOR;型号: | KF5N65D |
厂家: | KEC(KOREA ELECTRONICS) |
描述: | N CHANNEL MOS FIELD EFFECT TRANSISTOR |
文件: | 总6页 (文件大小:487K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
KF5N65D/I
SEMICONDUCTOR
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
TECHNICAL DATA
General Description
KF5N65D
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
electronic ballast and switching mode power supplies.
A
C
K
DIM MILLIMETERS
L
D
B
_
A
B
C
D
E
6.60 + 0.20
_
6.10+0.20
_
5.34 + 0.30
_
0.70+0.20
_
2.70 + 0.15
FEATURES
_
2.30+0.10
F
0.96 MAX
0.90 MAX
G
H
J
· VDSS= 650V, ID= 4.4A
H
J
_
1.80+0.20
· Drain-Source ON Resistance : RDS(ON)=1.75Ω (Max) @VGS = 10V
· Qg(typ) = 14.5nC
E
_
2.30+0.10
K
L
G
N
_
0.50 + 0.10
_
F
F
M
M
N
O
0.50+0.10
0.70 MIN
0.1 MAX
1
2
3
MAXIMUM RATING (Tc=25℃)
O
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
@TC=25℃
SYMBOL
VDSS
RATING
650
UNIT
V
VGSS
V
±30
4.4
DPAK (1)
ID
Drain Current
@TC=100℃
2.7
A
KF5N65I
IDP
Pulsed (Note1)
15
A
C
H
J
Single Pulsed Avalanche Energy
(Note 2)
EAS
150
3.8
4.5
mJ
mJ
Repetitive Avalanche Energy
(Note 1)
EAR
DIM MILLIMETERS
_
A
B
C
D
E
F
6.6
+
0.2
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
V/ns
_
6.1 0.2
+
M
_
5.34 0.3
+
P
_
0.7 0.2
+
69.4
0.56
W
W/℃
℃
Tc=25℃
N
Drain Power
Dissipation
PD
_
9.3 0.3
+
_
Derate above 25℃
2.3 0.2
+
_
0.76 0.1
G
H
J
+
Tj
Maximum Junction Temperature
Storage Temperature Range
150
G
_
2.3 0.1
+
_
L
0.5 0.1
+
F
F
Tstg
-55∼ 150
℃
_
K
L
M
N
P
1.8 0.2
+
_
+
0.5
0.1
Thermal Characteristics
_
1.0 0.1
+
0.96 MAX
_
1
2
3
RthJC
RthJA
Thermal Resistance, Junction-to-Case
1.8
℃/W
℃/W
1.02 0.3
+
Thermal Resistance, Junction-to-
Ambient
110
PIN CONNECTION
IPAK(1)
D
G
S
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Revision No : 0
1/6
KF5N65D/I
ELECTRICAL CHARACTERISTICS (Tc=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP. MAX. UNIT
Static
BVDSS
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj ID=250㎂, Referenced to 25℃
Drain-Source Breakdown Voltage
ID=250㎂ , VGS=0V
650
-
0.7
-
-
-
V
V/℃
㎂
-
-
IDSS
Vth
VDS=650V, VGS=0V,
VDS=VGS, ID=250㎂
VGS=±30V, VDS=0V
VGS=10V, ID=2.2A
Drain Cut-off Current
Gate Threshold Voltage
Gate Leakage Current
Drain-Source ON Resistance
Dynamic
10
2.5
-
-
4.5
±100
1.75
V
IGSS
-
nA
RDS(ON)
-
1.5
Ω
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
-
-
-
-
-
-
-
-
-
-
14.5
3.0
5.8
35
-
-
-
-
-
-
-
-
-
-
VDS=520V, ID=5A
Gate-Source Charge
Gate-Drain Charge
nC
VGS=10V
(Note4,5)
(Note4,5)
Turn-on Delay time
Turn-on Rise time
VDD=325V
ID=5A
35
ns
td(off)
tf
Turn-off Delay time
Turn-off Fall time
65
RG=25Ω
25
Ciss
Coss
Crss
Input Capacitance
720
72
VDS=25V, VGS=0V, f=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode Ratings
pF
7.2
IS
ISP
VSD
trr
Continuous Source Current
Pulsed Source Current
-
-
-
-
-
-
-
5.5
22
1.4
-
VGS<Vth
A
IS=4.4A, VGS=0V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
-
V
ns
300
1.8
IS=5.0A, VGS=0V,
dIs/dt=100A/㎲
Qrr
-
μC
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=12.4mH, IS=5.0A, VDD=50V, RG=25Ω , Starting Tj=25℃.
Note 3) IS≤ 5A, dI/dt≤ 100A/㎲, VDD≤ BVDSS, Starting Tj=25℃.
Note 4) Pulse Test : Pulse width ≤ 300㎲, Duty Cycle≤ 2%.
Note 5) Essentially independent of operating temperature.
Marking
1
1
KF5N65
001
KF5N65
001
I
2
2
D
1
2
PRODUCT NAME
LOT NO
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Revision No : 0
2/6
KF5N65D/I
Fig1. I - V
Fig2. I - V
D
D
GS
DS
100
10
V
=25V
DS
101
V
=10V, 7V
GS
100 C
25 C
100
V
=5V
GS
1
10-1
0.1
0.1
10
2
4
6
8
10
1
100
Drain - Source Voltage VDS (V)
Gate - Source Voltage VGS (V)
Fig3. BV
- T
Fig4. R
- I
DSS
j
DS(ON) D
1.2
1.1
1.0
0.9
0.8
6.0
5.0
4.0
3.0
2.0
1.0
0
VGS = 0V
IDS = 250
V
=7V
GS
V
=10V
GS
100
-100
-50
0
50
150
0
1
2
3
4
5
6
7
8
Junction Temperature Tj (
)
Drain Current ID (A)
C
Fig6. R
- T
j
DS(ON)
Fig5. I - V
S
SD
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
I
=10V
= 2.2A
GS
DS
101
100
10-1
150 C
25 C
-100
-50
0
50
100
150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
(V)
Junction Temperature T (
)
C
Source - Drain Voltage VSD
j
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Revision No : 0
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KF5N65D/I
Fig 7. C - V
DS
Fig8. Q - V
g
GS
104
103
12
10
8
ID=5A
C
iss
V
= 520V
DS
102
101
6
C
oss
4
2
C
rss
0
100
3
9
12
21
24
0
6
15
18
(nC)
0
5
10
15
20
25
30
35
40
Gate - Charge
Q
g
Drain - Source Voltage VDS (V)
Fig9. Safe Operation Area
Fig10. I - T
D
j
102
101
100
6
5
4
3
2
1
0
Operation in this
area is limited by RDS(ON)
10µs
100µs
1ms
10ms
10-1
102
DC
T = 25
C
c
C
T = 150
j
Single pulse
102
103
100
101
50
75
125
150
0
25
100
Drain - Source Voltage V
(V)
DS
Junction Temperature T
(
)
C
j
Fig11. Transient Thermal Response Curve
101
100
Duty=0.5
P
DM
t
1
10-1
t
2
- Duty Factor, D= t1/t2
Tj(max) - Tc
- RthJC
=
PD
10-2
10-5
10-4
10-3
10-2
10-1
100
101
TIME (sec)
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Revision No : 0
4/6
KF5N65D/I
2011. 10. 27
Revision No : 0
5/6
KF5N65D/I
Fig15. Source - Drain Diode Reverse Recovery and dv /dt
Body Diode Forword Current
DUT
V
DS
I
SD
(DUT)
di/dt
I
F
I
RM
I
S
Body Diode Reverse Current
Body Diode Recovery dv/dt
0.5
V
DSS
V
DS
(DUT)
driver
VSD
V
DD
V
GS
10V
Body Diode Forword Voltage drop
2011. 10. 27
Revision No : 0
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