KTC2874_03 [KEC]
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE; 硅NPN晶体管外延平面型
| 型号： | KTC2874_03 |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE |
| 文件： | 总3页 (文件大小：403K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KTC2874
SEMICONDUCTOR
SILICON NPN TRANSISTOR
EPITAXIAL PLANAR TYPE
TECHNICAL DATA
FOR MUTING AND SWITCHING APPLICATION.
B
C
FEATURES
High Emitter-Base Voltage : VEBO=25V(Min.)
High Reverse hFE
: Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)
Low on Resistance : RON=1 (Typ.), (IB=5mA)
DIM MILLIMETERS
A
B
C
d
4.7 MAX
5.1 MAX
4.1 MAX
0.45
D
d
0.55 MAX
0.8
D
E
G
L
P
1.8
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
12.7 MIN
1.27
SYMBOL
VCBO
VCEO
VEBO
IC
RATING
50
UNIT
V
T
0.45
P
P
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
20
V
3
1
2
1. EMITTER
2. COLLECTOR
3. BASE
25
V
300
mA
mA
mW
IB
Base Current
60
PC
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
625
TO-92
Tj
150
Tstg
-55 150
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Collector Cut-off Current
Emitter Cut-off Current
SYMBOL
ICBO
TEST CONDITION
MIN.
TYP.
-
MAX.
0.1
0.1
1200
0.1
-
UNIT
VCB=50V, IE=0
-
A
A
IEBO
VEB=25V, IC=0
-
-
hFE
*
VCE=2V, IC=4mA
IC=30mA, IB=3mA
VCE=2V, IC=4mA
VCE=6V, IC=4mA
VCB=10V, IE=0, f=1MHz
DC Current Gain (Note)
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
200
-
VCE(sat)
VBE
fT
-
-
-
-
0.042
0.61
30
V
V
MHz
pF
Transition Frequency
-
Cob
Collector Output Capacitance
4.8
7
OUTPUT
tON
tstg
tf
Turn-on Time
-
-
-
160
500
130
-
-
-
4kΩ
INPUT
Switching
Storage Time
Time
10V
nS
1µs
DUTY CYCLE 2%
V
=12V
CC
Fall Time
<
V
BB
=-3V
=
*Note) : hFE Classification A:200~700, B: 350 1200
2003. 6. 30
Revision No : 4
1/3
KTC2874
I C - VCE
I C - VCE (REVERSE REGION)
50
40
30
20
10
0
-10
-8
-6
-4
-2
0
160
COMMON
EMITTER
Ta=25 C
COMMON
EMITTER
Ta=25 C
50
140
120
100
40
30
80
60
40
20
I
=20µA
B
I
=10µA
B
0
0
0
2
4
6
8
10
0
-2
-4
-6
-8
-10
COLLECTOR-EMITTER VOLTAGE V
(V)
COLLECTOR-EMITTER VOLTAGE V
(V)
CE
CE
hFE - IC
VCE(sat) - IC
500
300
5k
COMMON EMITTER
COMMON EMITTER
/I =10
B
3k
I
C
100
Ta=100 C
1k
50
30
V
=6V
=2V
500
300
CE
Ta=25 C
Ta=-25 C
10
5
3
V
CE
100
50
1
0.3
1
3
10
30
100
0.1
0.3
1
3
10
30
100
300
COLLECTOR CURRENT I (mA)
C
COLLECTOR CURRENT I (mA)
C
IC - VBE
fT - IE
300
200
100
500
COMMON EMITTER
300
COMMON EMITTER
V
=6V
Ta=25 C
CE
V
CE
=2V
100
50
30
Ta=25 C
Ta=-25 C
10
5
0
0
0.4
0.8
1.2
1.6
-0.1
-0.3
-1
-3
-10
-30
-100
BASE-EMITTER VOLTAGE V
BE
(V)
EMITTER CURRENT I (mA)
E
2003. 6. 30
Revision No : 4
2/3
KTC2874
Cob - VCB
R ON - IB
100
30
10
1kΩ
f=1MHz
=0
50
30
I
E
Ta=25 C
10kΩ
I
B
10
5
3
5
3
1
0.5
0.3
1
0.3 0.5
1
3
5
10
30
0.01
0.03
0.1
0.3
1
3
10
BASE CURRENT I (mA)
COLLECTOR-BASE VOLTAGE V
(V)
CB
B
Pc - Ta
700
600
500
400
300
200
100
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE Ta ( C)
2003. 6. 30
Revision No : 4
3/3
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