KI5441DC [KEXIN]

P-Channel 2.5-V (G-S) MOSFET; P沟道2.5 -V (G -S )的MOSFET
KI5441DC
型号: KI5441DC
厂家: GUANGDONG KEXIN INDUSTRIAL CO.,LTD    GUANGDONG KEXIN INDUSTRIAL CO.,LTD
描述:

P-Channel 2.5-V (G-S) MOSFET
P沟道2.5 -V (G -S )的MOSFET

文件: 总2页 (文件大小:63K)
中文:  中文翻译
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SMD Type  
IC  
P-Channel 2.5-V (G-S) MOSFET  
KI5441DC  
Features  
TrenchFET Power MOSFET  
2.5-V Rated  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain-Source Voltage  
Symbol  
VDS  
5 secs  
Steady State  
-20  
12  
Unit  
V
Gate-Source Voltage  
VGS  
-5.3  
-3.9  
-2.8  
TA = 25  
ID  
Continuous Drain Current (TJ = 150 ) *  
-3.8  
TA = 85  
A
Pulsed Drain Current  
-20  
IDM  
IS  
Continuous Source Current *  
-2.1  
2.5  
1.3  
-1.1  
1.3  
0.7  
TA = 25  
TA = 85  
Maximum Power Dissipation *  
PD  
W
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
Parameter  
-55 to 150  
260  
TJ, Tstg  
Symbol  
RthJA  
Typ  
40  
Max  
50  
Unit  
/W  
t
5 sec  
Maximum Junction-to-Ambienta  
Steady-State  
Steady-State  
80  
95  
Maximum Junction-to-Foot (Drain)  
RthJF  
15  
20  
* Surface Mounted on 1" X 1' FR4 Board.  
1
www.kexin.com.cn  
SMD Type  
IC  
KI5441DC  
Electrical Characteristics Ta = 25  
Parameter  
Gate Threshold Voltage  
Gate-Body Leakage  
Symbol  
VGS(th)  
IGSS  
Testconditons  
VDS = VGS, ID = -250  
Min  
-0.6  
Typ  
Max  
-1.0  
100  
-1  
Unit  
V
A
nA  
A
VDS = 0 V, VGS = 12 V  
VDS = -20V, VGS = 0 V  
VDS = -20V, VGS = 0 V, TJ = 85  
VDS - 5 V, VGS = -4.5 V  
VGS = -4.5 V, ID = -3.9A  
VGS = -3.6 V, ID = -3.7A  
VGS = -2.5 V, ID = -3.1A  
VDS = -10 V, ID = -3.9A  
IS = -1.1 A, VGS = 0 V  
Zero Gate Voltage Drain Current  
On-State Drain Current*  
IDSS  
-5  
A
ID(on)  
-20  
A
0.046  
0.05  
0.07  
12  
0.055  
0.06  
Drain-Source On-State Resistance*  
rDS(on)  
0.083  
Forward Transconductance*  
Schottky Diode Forward Voltage*  
Total Gate Charge  
gfs  
VSD  
Qg  
S
-0.8  
11  
-1.2  
22  
V
nC  
nC  
nC  
ns  
ns  
ns  
ns  
ns  
Gate-Source Charge  
Gate-Drain Charge  
Qgs  
Qgd  
td(on)  
tr  
VDS = -10V, VGS = -4.5 V, ID = -3.9 A  
3.0  
2.5  
20  
Turn-On Delay Time  
Rise Time  
30  
55  
35  
VDD = -10 V, RL = 10  
Turn-Off Delay Time  
Fall Time  
td(off)  
tf  
65  
100  
70  
ID = -1 A, VGEN = -4.5V, RG = 6  
45  
Source-Drain Reverse Recovery Time  
trr  
30  
60  
IF = -1.1 A, di/dt = 100 A/  
s
* Pulse test; pulse width  
300 s, duty cycle  
2%.  
2
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