KO3403 [KEXIN]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | KO3403 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总2页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
P-Channel Enhancement Mode Field Effect Transistor
KO3403
SOT-23
Unit: mm
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
Features
VDS (V) = -30V
ID =-2.6 A (VGS=-10V)
1
2
RDS(ON)
RDS(ON)
RDS(ON)
130 m (VGS = -10V)
+0.1
0.95
-0.1
+0.05
0.1
-0.01
+0.1
1.9
-0.1
180 m (VGS = -4.5V)
260m (VGS = -2.5V)
1. Gate
2. Source
3. Drain
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Symbol
VDS
Rating
-30
Unit
V
V
Gate-Source Voltage
VGS
12
-2.6
Continuous Drain TA=25
ID
A
-2.2
Current *1
TA=70
Pulsed Drain Current *2
Power Dissipation *1 TA=25
TA=70
IDM
PD
-20
1.4
W
1
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
*1The value of R èJA is measured with the device mounted on 1in 2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25
*2 Repetitive rating, pulse width limited by junction temperature.
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient*1
Maximum Junction-to-Ambient *1
Maximum Junction-to-Lead *2
Symbol
Typ
70
Max
90
Unit
/W
t
10s
RèJA
Steady-State
Steady-State
100
63
125
80
/W
RèJL
/W
*1The value of R èJA is measured with the device mounted on 1in 2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25
*2 . The R èJA is the sum of the thermal impedence from junction to lead R èJL and lead to ambient.
1
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SMD Type
Transistors
KO3403
Electrical Characteristics Ta = 25
Parameter
Symbol
BVDSS
Testconditons
Min
-30
Typ
Max
Unit
V
Drain-Source Breakdown Voltage
ID=-250 A, VGS=0V
VDS=-24V, VGS=0V
-1
-5
Zero Gate Voltage Drain Current
IDSS
A
VDS=-24V, VGS=0V ,TJ=55
VDS=0V, VGS= 12V
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
IGSS
VGS(th)
ID(ON)
nA
V
100
-1.4
-0.6
-10
-1
VDS=VGS ID=-250
A
VGS=-4.5V, VDS=-5V
VGS=-10V, ID=-2.6A
VGS=-10V, ID=-2.6A
VGS=-4.5V, ID=-2A
VGS=-2.5V, ID=-1A
VDS=5V, ID=-2.5A
IS=-1A,VGS=0V
A
102
154
128
187
4.5
130
200
180
260
m
TJ=125
Static Drain-Source On-Resistance
RDS(ON)
m
m
S
Forward Transconductance
Diode Forward Voltage
Maximum Body-Diode Continuous Current
Reverse Transfer Capacitance
Gate resistance
gFS
VSD
IS
3
-0.85
-1
-2
V
A
Ciss
Coss
Crss
Rg
400
55
500
pF
pF
pF
VGS=0V, VDS=-15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=-4.5V, VDS=-15V, ID=-2.5A
Input Capacitance
42
Output Capacitance
12
16
Total Gate Charge
Qg
4.4
0.8
1.32
5.3
4.4
31.5
8
5.3
nC
nC
nC
ns
ns
ns
ns
ns
nC
Gate Source Charge
Qgs
Qgd
tD(on)
tr
Gate Drain Charge
Turn-On Rise Time
8
Turn-Off DelayTime
9
VGS=-10V, VDS=-15V, RL=6 ,RGEN=3
Turn-Off Fall Time
tD(off)
tf
45
16
19
12
Turn-On DelayTime
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
15.8
8
IF=-2.5A, dI/dt=100A/
IF=-2.5A, dI/dt=100A/
s
s
Qrr
Marking
Marking
A3
2
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