KRF7494 [KEXIN]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | KRF7494 |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总2页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
IC
HEXFET Power MOSFET
KRF7494
Features
High frequency DC-DC converters
Absolute Maximum Ratings Ta = 25
Parameter
Continuous Drain Current, VGS @ 10V,Ta = 25
Continuous Drain Current, VGS @ 10V,TA = 100
Pulsed Drain Current*1
Symbol
ID
Rating
Unit
A
5.2
ID
3.7
IDM
PD
42
3
0.02
20
W
W/
V
Power Dissipation Ta = 25 *1
Linear Derating Factor
Gate-to-Source Voltage
VGS
VDS
Drain-Source Voltage
150
V
Operating Junction and Storage Temperature Range
Junction-to-Ambient
TJ,TSTG
-55 to + 150
50
R
JA
/W
/W
mJ
A
Junction-to-Drain Lead
R
JL
20
Single Pulse Avalanche Energy*3
Avalanche Current *2
EAS
IAR
370
3.1
*1 Pulse width
400 s; duty cycle
2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
*3 Starting TJ = 25 , L = 77mH,RG = 25 , IAS = 3.1A.
1
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SMD Type
IC
KRF7494
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
VGS = 0V, ID = 250
V(BR)DSS/ TJ ID = 1mA,Reference to 25
Min
150
Typ
Max
Unit
V
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V(BR)DSS
A
0.15
35
V/
m
RDS(on)
VGS(th)
gfs
VGS = 10V, ID = 3.1A*1
44
2.5
12
4.5
V
VDS = VGS, ID = 250
VDS = 50V, ID = 5.2A*1
VDS = 120V, VGS = 0V
VDS = 120V, VGS = 0V, TJ = 125
VGS = 20V
A
Forward Transconductance
S
1.0
250
100
-100
54
Drain-to-Source Leakage Current
IDSS
A
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
nA
VGS = -20V
Qg
Qgs
ID = 3.1A
36
7.5
13
nC
ns
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
VDS = 75V
Qgd
VGS = 10V,*1
td(on)
tr
td(off)
tf
VDD = 100V
15
Rise Time
ID = 3.1A
13
Turn-Off Delay Time
36
RG =6.5
Fall Time
VGS=10V
14
Input Capacitance
Ciss
VGS = 0V
1750
220
100
870
120
170
Output Capacitance
Coss
Crss
Coss
Coss
Coss eff.
VDS = 25V
Reverse Transfer Capacitance
Output Capacitance
ƒ= 1.0MHz
pF
VGS = 0V, VDS = 1.0V, f = 1.0MHz
VGS = 0V, VDS = 120V, f= 1.0MHz
VGS = 0V, VDS = 0V to 120V
Output Capacitance
Effective Output Capacitance
IS
2.7
Continuous Source Current Body Diode)
Pulsed Source Current Body Diode) *2
A
ISM
42
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
VSD
trr
1.3
V
TJ = 25 , IS = 3.1A, VGS = 0V*1
TJ = 25 , IF = 3.1A.VDD=25V
di/dt = 100A/ s*1
55
ns
nC
Qrr
ton
140
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
*1 Pulse width
400µs; duty cycle
2%.
*2 Repetitive rating; pulse width limited bymax
2
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