KTA1049-O [KEXIN]
PNP Transistors;
| 型号： | KTA1049-O |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | PNP Transistors |
| 文件： | 总2页 (文件大小：1322K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DIP Type
Transistors
PNP Transistors
KTA1049
Unit: mm
TO-220F
±0.20
±0.20
±0.20
20
.
2.54
8±0
1
±0.20
0.70
φ3.
■ Features
● Low collector saturation voltage
● Complementary to KTC2028
±0.20
2.76
1.47max
±0.20
0.50
±0.20
0.80
1. Base
2.54typ
2.54typ
2. Collector
3. Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current - Continuous
Base Current
Symbol
Rating
-100
-100
-5
Unit
V
VCBO
VCEO
VEBO
I
C
-5
A
I
B
-0.5
P
C
30
W
℃
Collector Power Dissipation
Junction Temperature
Tc = 25℃
T
J
150
Storage Temperature range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Ic= -10 mA， I =0
Ic= -50 mA，I =0
= -10 mA， I =0
CB= -100V , I =0
EB= -5V , I =0
Min
Typ
Max
Unit
Collector- base breakdown voltage
Collector- emitter breakdown voltage
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
-100
-100
-5
E
V
uA
V
B
I
E
C
I
CBO
EBO
V
V
E
-0.1
-0.1
-2
I
C
Collector-emitter saturation voltage
Base - emitter saturation voltage
Base - emitter voltage
V
CE(sat)
BE(sat)
I
I
C
=-4 A, I
B
=-400mA
=-400mA
V
C=-4 A, I
B
-1.2
-1.5
240
V
BE
V
V
V
V
V
CE= -5V, I
CE= -5V, I
CE= -5V, I
C
C
C
= -4 A
= -1 A
= -4 A
hFE(1)
70
20
DC current gain
hFE(2)
Collector output capacitance
Transition frequency
Cob
CB= -10V, I
E= 0,f=1MHz
270
30
pF
f
T
CE= -5V, I = -1 A
C
MHz
■ Classification of hfe(1)
Type
KTA1049-O
KTA1049-Y
120-240
Range
70-140
1
www.kexin.com.cn
DIP Type
Transistors
PNP Transistors
KTA1049
■ Typical Characterisitics
2
www.kexin.com.cn
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