MMBTA45-L-HF [KEXIN]
NPN Transistors;
| 型号： | MMBTA45-L-HF |
| 厂家： | 
GUANGDONG KEXIN INDUSTRIAL CO.,LTD |
| 描述： | NPN Transistors |
| 文件： | 总2页 (文件大小：1314K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Type
Transistors
NPN Transistors
MMBTA45-HF (KMBT45-HF)
SOT-23-3
Unit: mm
+0.2
-0.1
2.9
0.4
+0.1
-0.1
3
■ Features
● High Collector-Emitter Voltage
● Complement to MMBTA93-HF
1
2
+0.02
-0.02
+0.1
0.15
0.95
-0.1
+0.1
-0.2
1.9
● Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
1. Base
2. Emitter
3. Collector
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
400
Unit
V
Collector - Base Voltage
VCBO
VCEO
VEBO
Collector - Emitter Voltage
Emitter - Base Voltage
350
6
Collector Current - Continuous
Collector Current -Pulsed
I
C
200
mA
I
CM
300
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
P
C
350
mW
RθJA
357
℃/W
T
J
150
℃
Storage Temperature Range
T
stg
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
V
Collector- base breakdown voltage
Collector- emitter breakdown voltage *1
Emitter - base breakdown voltage
Collector-base cut-off current
Emitter cut-off current
VCBO
VCEO
VEBO
400
350
6
Ic= 100 μA， I
Ic= 1 mA， I = 0
= 100μA， I = 0
CB= 400 V , I = 0
EB= 4V , I =0
E= 0
B
I
E
C
I
CBO
EBO
V
V
E
100
100
0.2
nA
V
I
C
V
V
CE(sat)1
CE(sat)2
I
I
I
C
=10 mA, I
=50 mA, I
=10 mA, I
CE= 10V, I
CE= 10V, I
CE= 10V, I
CE= 10V, I
CB= 20V, I
B
B
B
=1mA
=5mA
=1mA
Collector-emitter saturation voltage *1
Base - emitter saturation voltage *1
C
C
0.3
V
BE(sat)
0.75
h
FE(1)
FE(2)
FE(3)
FE(4)
V
V
V
V
V
C
C
C
C
= 1mA
50
80
40
40
h
= 10mA
= 50mA
= 100mA
300
7
DC current gain *1
h
h
Collector output capacitance
Transition frequency
Cob
E
= 0,f=1MHz
pF
f
T
VC
E
=20, I
C= 10mA,f=30MHz
50
MHz
*1: Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
■ Classification of hfe(2)
Type
Range
Marking
MMBTA45-HF MMBTA45-L-HF
80-300 100-200
3D
F
1
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SMD Type
Transistors
NPN Transistors
MMBTA45-HF (KMBT45-HF)
■ Typical Characterisitics
hFE —— IC
Static Characteristic
16
14
12
10
8
1000
VCE= 10V
COMMON
EMITTER
Ta=25℃
80uA
72uA
Ta=100℃
Ta=25℃
64uA
56uA
48uA
40uA
100
6
32uA
24uA
4
16uA
IB=8uA
2
0
10
0.1
0
5
10
15
20
100
20
1
10
100
100
150
COLLECTOR CURRENT IC (mA)
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCEsat —— IC
VBEsat —— IC
1.0
0.8
0.6
0.4
0.2
0.0
300
100
β=10
β=10
Ta=25℃
Ta=100℃
Ta=100℃
Ta=25℃
30
10
0.1
1
10
1
10
COLLECTOR CURRENT IC (mA)
COLLECTOR CURRENT IC (mA)
Pc —— Ta
Cob / Cib ——
VCB / VEB
400
350
300
250
200
150
100
50
500
f=1MHz
IE=0 / IC=0
Ta=25℃
Cib
100
10
1
Cob
0
0.1
1
10
0
25
50
75
100
125
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE Ta (℃)
2
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