MMBTA45L-AE3-R [UTC]
HIGH VOLTAGE TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR; 高压晶体管NPN外延硅晶体管
| 型号： | MMBTA45L-AE3-R |
| 厂家： | 
Unisonic Technologies |
| 描述： | HIGH VOLTAGE TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR |
| 文件： | 总5页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO.,LTD.
MMBTA44/45
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE
TRANSISTOR
3
ꢀ
FEATURES
*Collector-Emitter voltage: VCEO=400V (UTC MMBTA44)
CEO=350V (UTC MMBTA45)
V
*Collector current up to 300mA
*Complement to UTC MMBTA94/93
*Power Dissipation: PD(max)=350mW
1
2
ꢀ
MARKING (MMBTA44)
SOT-23
* Pb-free plating product number:
MMBTA44L/MMBTA45L
3D
ꢀ
PIN CONFIGURATION
PIN NO.
PIN NAME
Emitter
1
2
3
Base
Collector
ꢀ ORDERING INFORMATION
Order Number
Package
Packing
Normal
Lead free
MMBTA44-AE3-R MMBTA44L-AE3-R SOT-23
MMBTA45-AE3-R MMBTA45L-AE3-R SOT-23
Tape Reel
Tape Reel
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co.,LTD.
1
QW-R206-007.B
MMBTA44/45
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
ꢀ
PARAMETER
MMBTA44
SYMBOL
VCBO
RATINGS
500
UNIT
V
Collector-Base Voltage
MMBTA45
MMBTA44
MMBTA45
400
400
Collector-Emitter Voltage
VCEO
V
350
Emitter-Base Voltage
Collector Current
VEBO
Ic
6
V
mA
mW
W
300
Ta=25°C
Tc=25°C
350
Power Dissipation
PD
1.5
Junction Temperature
Storage Temperature
TJ
+150
-40 ~ +150
°C
°C
TSTG
ELECTRICAL CHARACTERISTICS
ꢀ
(Tj =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
V
Collector-Base Breakdown
Voltage
MMBTA44
MMBTA45
500
400
400
350
6
BVCBO
Ic=100µA, IB=0
Collector-Emitter Breakdown MMBTA44
Voltage
BVCEO
BVEBO
Ic=1mA, IB=0
V
MMBTA45
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IE=100µA, Ic=0
V
Ic=1mA, IB=0.1mA
Ic=10mA, IB=1mA
Ic=50mA, IB=5mA
Ic=10mA, IB=1mA
VCB=400V, IE =0
0.4
VCE(sat)
0.5
0.75
0.75
0.1
V
VBE(sat)
ICBO
V
MMBTA44
Collector Cut-off Current
µA
MMBTA45
MMBTA44
MMBTA45
V
CB=320V, IE =0
VCE =400V, IB=0
CE =320V, IB=0
0.1
0.5
Collector Cut-off Current
Emitter Cut-off Current
ICES
IEBO
µA
µA
V
0.5
VEB=4V, Ic=0
0.1
VCE =10V, Ic=1mA
40
50
45
40
VCE =10V, Ic=10mA
VCE =10V, Ic=50mA
VCE =10V, Ic=100mA
VCE =20V, Ic=10mA
240
DC Current Gain(Note)
hFE
Current Gain Bandwidth Product
fT
50
MHz
pF
f=100MHz
Output Capacitance
Cob
VCB=20V, IE =0, f=1MHz
7
Note: Pulse test: PW<300µs, Duty Cycle<2%
UNISONIC TECHNOLOGIES CO., LTD
2
www.unisonic.com.tw
QW-R206-007.B
MMBTA44/45
NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
ꢀ
DC current gain
Turn-on switching times
101
VCE=150V
VCE=10V
140
120
100
80
Ic
/I
B
=10
Ta=25℃
=4V
VBE( OFF)
100
60
40
20
0
Tf
-20
-40
Td
-1
10
1
100
10
Collector Current, IC
102
103
(mA)
104
100
101
102
(mA)
Collector Current, IC
Capacitance
Turn - off switching times
102
103
VCE =150V
Ic/I =10
B
25℃
Ta=
101
100
102
Cib
ts
1
10
tF
Cob
1
-
100
10
100
101
Collector Current, IC
102
1
-
10
100
101
102
( )
103
( mA)
V
Collector Voltage
UNISONIC TECHNOLOGIES CO., LTD
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QW-R206-007.B
MMBTA44/45
NPN EPITAXIAL SILICON TRANSISTOR
ON voltage
Collector saturation region
0.5
1. 0
Ta=25℃
0.8
0.4
Ic =1mA
VBE (sat ) , Ic/IB=10
Ic=10mA
Ic=50mA
0.3
0.6
VBE(ON), V =10V
CE
0.2
0.1
0.4
0. 2
0
VCE(sat ),Ic/I =10
B
Ta=25℃
0
1
1
10
103
101
10
103
104
105
100
102
( mA)
-
2
10
Collector Current, IC
Base Current, IB (μA)
TYPICAL CHARACTERISTICS(cont.)
ꢀ
High frequency
Safe operating area
current gain
102
101
104
Valid Duty
Cycle<10%
VCE =10V
f=10MHz
Ta=25℃
1ms
1s
103
102
101
100
0.1ms
T
a
=
2
5
T
a
=
2
℃
5
℃
100
MPSA44
101 102
Collector voltage (V)
10-1
100
102
( mA)
10-1
103
100
103
104
1
10
Collector current, IC
UNISONIC TECHNOLOGIES CO., LTD
4
www.unisonic.com.tw
QW-R206-007.B
MMBTA44/45
NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
5
www.unisonic.com.tw
QW-R206-007.B
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