STK0380D [KODENSHI]

SWWITCHINNG REGGULATOOR APPLICATIOON; SWWITCHINNG REGGULATOOR APPLICATIOON
STK0380D
型号: STK0380D
厂家: KODENSHI KOREA CORP.    KODENSHI KOREA CORP.
描述:

SWWITCHINNG REGGULATOOR APPLICATIOON
SWWITCHINNG REGGULATOOR APPLICATIOON

文件: 总8页 (文件大小:373K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
STK0380D  
Advanced N-Ch Power MOSFET  
SWITCHING REGULATOR APPLICATION  
Features  
BVDDS=880V @Tjmax  
Low gate charge: Qg=19nC (Typ.)  
Low drain-source On resistance: RDS(on)=4.2(Max.)  
RoHS compliant device  
D
Halogen free package  
G
Ordering Information  
S
Part Number  
Marking  
Package  
TO-252  
TO-252  
STK0380D  
STK0380  
Marking Information  
STK  
0380  
YWW  
Column 1, 2: Device Code  
Column 3: Production Information  
e.g.) YWW  
-. YWW: Date Code (year, week)  
Absolute maximum ratings (TC=25C unless otherwise noted)  
Characteristic  
Symbol  
Rating  
Unit  
Drain-source voltage  
VDSS  
VGSS  
800  
30  
3
V
V
Gate-source voltage  
Drain current (DC) *  
A
Tc=25C  
ID  
1.83  
12  
A
Tc=100C  
Drain current (Pulsed) *  
IDM  
EAS  
IAR  
A
Single pulsed avalanche energy (Note 2)  
Repetitive avalanche current (Note 1)  
Repetitive avalanche energy (Note 1)  
Power dissipation  
200  
3
mJ  
A
EAR  
PD  
7
mJ  
W
70  
Peak diode recovery dv/dt (Note 3)  
dv/dt  
TJ  
4.5  
V/ns  
C  
C  
Junction temperature  
150  
-55~150  
Storage temperature range  
Tstg  
* Limited only maximum junction temperature  
Rev. date: 09-FEB-11  
KSD-T6O029-000  
www.auk.co.kr  
1 of 8  
STK0380D  
Thermal Characteristics  
Characteristic  
Symbol  
Rth(j-c)  
Rating  
Max. 1.78  
Max. 110  
Unit  
Thermal resistance, junction to case  
Thermal resistance, junction to ambient  
C/W  
Rth(j-a)  
Electrical Characteristics (TC=25C unless otherwise noted)  
Characteristic  
Drain-source breakdown voltage  
Gate threshold voltage  
Symbol  
Test Condition  
Min.  
Typ. Max.  
Unit  
BVDSS  
ID=250uA, VGS=0  
800  
-
-
-
V
V
VGS(th)  
ID=250uA, VDS=VGS  
VDS=800V, VGS=0V  
VDS=640V, Tc=125C  
VDS=0V, VGS=30V  
VGS=10V, ID=1.5A  
VDS=30V, ID=1.5A  
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
4
-
10  
uA  
uA  
nA  
Drain-source cut-off current  
IDSS  
-
100  
Gate leakage current  
IGSS  
RDS(ON)  
gfs  
-
100  
Drain-source on-resistance  
Forward transfer conductance (Note 4)  
Input capacitance  
3.36  
3.7  
696  
65  
10.2  
48  
36  
106  
41  
19  
4
4.2  
-
-
-
-
-
-
-
-
-
-
-
S
Ciss  
Coss  
Crss  
td(on)  
tr  
VDS=25V, VGS=0V,  
f=1.0MHz  
Output capacitance  
pF  
ns  
Reverse transfer capacitance  
Turn-on delay time (Note 4,5)  
Rise time (Note 4,5)  
V
DD=400V, ID=3A  
RG=25  
Turn-off delay time (Note 4,5)  
Fall time (Note 4,5)  
td(off)  
tf  
Total gate charge (Note 4,5)  
Gate-source charge (Note 4,5)  
Gate-drain charge (Note 4,5)  
Qg  
VDS=640V, VGS=10V  
ID=3A  
Qgs  
Qgd  
nC  
7.6  
Source-Drain Diode Ratings and Characteristics (TC=25C unless otherwise noted)  
Characteristic  
Symbol  
Test Condition  
Min.  
Typ. Max.  
Unit  
A
Source current (DC)  
IS  
ISM  
VSD  
trr  
-
-
-
-
-
-
-
3
12  
1.5  
-
Integral reverse diode  
in the MOSFET  
Source current (Pulsed)  
Forward voltage  
A
VGS=0V, IS=3A  
-
V
Reverse recovery time (Note 4,5)  
Reverse recovery charge (Note 4,5)  
Note:  
372  
1.8  
ns  
uC  
IS=3A, VGS=0V  
dIF/dt=100A/us  
Qrr  
-
1. Repeated rating: Pulse width limited by safe operating area  
2. L=42mH, IAS=3A, VDD=50V, RG=25, Starting TJ=25C  
3. ISD3A, di/dt200A/us, VDDBVDSS, Starting TJ=25C  
4. Pulse test: Pulse width300us, Duty cycle2%  
5. Essentially independent of operating temperature typical characteristics  
Rev. date: 09-FEB-11  
KSD-T6O029-000  
www.auk.co.kr  
2 of 8  
STK0380D  
Electrical Characteristic Curves  
Fig. 1 ID - VDS  
Fig. 2 ID – VGS  
Fig. 3 RDS(ON) - ID  
Fig. 4 IDR - VSD  
Fig. 5 Capacitance - VDS  
Fig. 6 VGS - QG  
Rev. date: 09-FEB-11  
KSD-T6O029-000  
www.auk.co.kr  
3 of 8  
STK0380D  
Electrical Characteristic Curves (Continue)  
Fig. 7 BVDSS - TJ  
Fig. 8 RDS(ON) - TJ  
Fig. 9 ID - TC  
Fig. 10 VGS(th) – TJ  
Fig. 11 Safe Operating Area  
Fig. 12 Zth(j-c) - t  
Rev. date: 09-FEB-11  
KSD-T6O029-000  
www.auk.co.kr  
4 of 8  
STK0380D  
Fig. 13 Gate Charge Test Circuit & Waveform  
Fig. 14 Resistive Switching Test Circuit & Waveform  
Fig. 15 EAS Test Circuit & Waveform  
Rev. date: 09-FEB-11  
KSD-T6O029-000  
www.auk.co.kr  
5 of 8  
STK0380D  
Fig. 16 Diode Reverse Recovery Time Test Circuit & Waveform  
Rev. date: 09-FEB-11  
KSD-T6O029-000  
www.auk.co.kr  
6 of 8  
STK0380D  
Package Outline Dimensions  
Recommended Land Pattern [unit: mm]  
7.00  
1.50  
4.60  
Rev. date: 09-FEB-11  
KSD-T6O029-000  
www.auk.co.kr  
7 of 8  
STK0380D  
The AUK Corp. products are intended for the use as components in general electronic  
equipment (Office and communication equipment, measuring equipment, home  
appliance, etc.).  
Please make sure that you consult with us before you use these AUK Corp. products  
in equipments which require high quality and / or reliability, and in equipments which  
could have major impact to the welfare of human life(atomic energy control, airplane,  
spaceship, transportation, combustion control, all types of safety device, etc.). AUK  
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.  
products were used in the mentioned equipments without prior consultation with AUK  
Corp..  
Specifications mentioned in this publication are subject to change without notice.  
Rev. date: 09-FEB-11  
KSD-T6O029-000  
www.auk.co.kr  
8 of 8  

相关型号:

STK0380F

SWITCHING REGULATOR APPLICATION
KODENSHI

STK0380P

Advanced Power MOSFET
AUK

STK03Y60

Advanced Power MOSFET
AUK

STK040

10,15,20W MIN AF POWER AMP
ETC

STK0460F

Advanced Power MOSFET
AUK

STK0460P

Advanced Power MOSFET
AUK

STK050

1 Channel by 2 Power Supplies
SANYO

STK0602

N-Channel Enhancement-Mode MOSFET
AUK

STK0602U

N-Channel Enhancement-Mode MOSFET
AUK

STK0602UF

N-Channel Enhancement-Mode MOSFET
AUK

STK070

1 Channel by 2 Power Supplies
SANYO

STK075

THICK FILM HYBRID IC
ETC