CESD3V3D7 [LGE]
SOD-723 Plastic-Encapsulate Diodes; SOD- 723塑封装二极管
| 型号： | CESD3V3D7 |
| 厂家： | 
LGE |
| 描述： | SOD-723 Plastic-Encapsulate Diodes |
| 文件： | 总3页 (文件大小：199K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOD-723 Plastic-Encapsulate Diodes
SOD-723
CESD3V3D7 ESD Protection Diodes
+
DESCRIPTION
The CESD3V3D7 is designed to protect voltage sensitive
components from ESD. Excellent clamping capability, low leakage,
and fast response time provide best in class protection on designs that
are exposed to ESD. Because of its small size, it is suited for use in
cellular phones, MP3 players, digital cameras and many other portable
applications where board space is at a premium.
-
FEATURES
z
z
z
z
z
z
Stand−off Voltage: 3.3 V−12 V
Low Leakage
Response Time is Typically < 1 ns
ESD Rating of Class 3 (> 16 kV) per Human Body Model
IEC61000−4−2 Level 4 ESD Protection
These are Pb−Free Devices
Maximum Ratings @TA=25℃
Parameter
Limits
Unit
Symbol
±30
±30
16
IEC61000−4−2(ESD)
Air
KV
Contact
KV
V
ESD voltage
per human body model
Per machine model
400
100
1250
260
mW
℃/W
℃
Total power dissipation on FR-5 board (Note 1)
Thermal Resistance Junction−to−Ambient
PD
RΘJA
TL
Lead Solder Temperature − Maximum (10 Second Duration)
Junction and Storage temperature range
Tj, Tstg
-55 ~ +150
℃
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.
Functional operation above the Recommended. Operating Conditions is not implied. Extended exposure to
stresses above the Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
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mail:lge@luguang.cn
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
IPP
VC
VRWM
IR
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
VBR
IT
Test Current
IF
Forward Current
VF
Ppk
C
Forward Voltage @ IF
Peak Power Dissipation
Max. Capacitance @VR=0 and f =1MHz
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10mA for all types)
IR (μA)
@ VRWM
Max
V
BR (V)
VC (V) @Max
Device
VRWM (V)
IT
IPP(A) +
Ppk + (W)
C (pF)
+
Device*
@ IT(Note 2)
IPP
Marking
Max
3.3
5.0
12
Min
5.0
Max
mA
1.0
1.0
1.0
Max
10.4
8.8
Max
11.9
13.3
23.7
Max
113
117
128
Typ
80
CESD3V3D7
CESD5V0D7
CESD12VD7
E0
E2
E3
2.5
5.9
7.3
1.0
6.2
65
1.0
13.5
15.6
5.4
30
*Other voltages available upon request.
+Surge current waveform per Figure 1.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
TYPICAL CHARACTERISTICS
http://www.luguang.cn
mail:lge@luguang.cn
http://www.luguang.cn
mail:lge@luguang.cn
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