IXGX55N120A3D1 [LITTELFUSE]
Insulated Gate Bipolar Transistor, 125A I(C), 1200V V(BR)CES, N-Channel,;
| 型号： | IXGX55N120A3D1 |
| 厂家： | 
LITTELFUSE |
| 描述： | Insulated Gate Bipolar Transistor, 125A I(C), 1200V V(BR)CES, N-Channel, 栅 |
| 文件： | 总2页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
GenX3TM 1200V
IGBTs w/ Diode
VCES = 1200V
IC110 = 55A
VCE(sat) ≤ 2.2V
IXGK55N120A3D1
IXGX55N120A3D1
Ultra-Low-Vsat PT IGBTs for
up to 3kHz Switching
TO-264 (IXGK)
Symbol
VCES
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Maximum Ratings
1200
1200
±20
V
V
V
V
G
C
Tab
VCGR
E
VGES
VGEM
Transient
±30
PLUS247TM (IXGX)
IC25
TC = 25°C ( Chip Capability )
TC = 110°C
125
55
A
A
A
A
IC110
ILRMS
ICM
TC = 25°C (Lead RMS Limit)
TC = 25°C, 1ms
120
400
SSOA
(RBSOA)
VGE= 15V, TVJ = 125°C, RG = 3Ω
Clamped Inductive Load
ICM = 110
A
G
C
E
Tab
@ 0.8 • VCES
PC
TC = 25°C
460
W
G = Gate
C = Collector
E
= Emitter
TJ
-55 ... +150
150
°C
°C
°C
Tab = Collector
TJM
Tstg
-55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
300
260
°C
°C
Features
z Optimized for Low Conduction Losses
z International Standard Packages
Md
FC
Mounting Torque ( IXGK )
Mounting Force ( IXGX )
1.13/10
20..120/4.5..27
Nm/lb.in.
N/lb.
Weight
TO-264
PLUS247
10
6
g
g
Advantages
z High Power Density
z Low Gate Drive Requirement
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
Applications
VGE(th)
ICES
IC = 1mA, VCE = VGE
VCE = VCES, VGE = 0V
3.0
5.0
V
z Power Inverters
z UPS
100 μA
Note 1, TJ = 125°C
2.0 mA
z Motor Drives
z SMPS
z PFC Circuits
z Battery Chargers
z Welding Machines
z Lamp Ballasts
z Inrush Current Protection Circuits
IGES
VCE = 0V, VGE = ±20V
±100 nA
VCE(sat)
IC = IC110, VGE = 15V, Note 2
TJ = 125°C
1.85
1.90
2.2
V
DS100207(10/09)
© 2009 IXYS CORPORATION, All Rights Reserved
IXGK55N120A3D1
IXGX55N120A3D1
Symbol
Test Conditions
Characteristic Values
TO-264 AA ( IXGK) Outline
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
gfs
IC = IC110, VCE = 10V, Note 2
VCE = 25V, VGE = 0V, f = 1 MHz
30
45
S
Cies
Coes
Cres
Qg(on)
Qge
Qgc
td(on)
tri
4340
300
115
185
25
pF
pF
pF
nC
nC
nC
ns
ns
mJ
ns
ns
IC = IC110, VGE = 15V, VCE = 0.5 • VCES
75
23
Inductive load, TJ = 25°C
IC = IC110, VGE = 15V
VCE = 0.8 • VCES, RG = 3Ω
Note 3
42
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
Eon
td(off)
tfi
5.1
365
282
13.3
24
A
A1
A2
4.82
2.54
2.00
5.13
2.89
2.10
.190
.100
.079
.202
.114
.083
b
b1
b2
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
Eoff
td(on)
tri
mJ
ns
c
D
E
e
0.53
25.91 26.16
19.81 19.96
5.46 BSC
0.83
.021
1.020
.780
.033
1.030
.786
Inductive load, TJ = 125°C
46
ns
.215 BSC
J
K
L
L1
P
Q
Q1
R
0.00
0.00
20.32 20.83
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
0.25
0.25
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
IC = IC110, VGE = 15V
Eon
td(off)
tfi
9.5
618
635
29.0
mJ
ns
VCE = 0.8 • VCES, RG = 3Ω
2.59
3.66
6.27
8.69
4.32
2.29
ns
Note 3
Eoff
RthJC
RthCK
mJ
0.27 °C/W
°C/W
R1
S
T
6.30
1.83
0.15
PLUS247TM (IXGX) Outline
Reverse Diode (FRED)
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, Unless Otherwise Specified)
Min.
Typ.
Max.
2.8
36
VF
IF = 30A, VGE = 0V, Note 2
V
IRM
trr
32
225
25
A
IF = 30A, VGE = 0V,
ns
-diF/dt = 480A/μs, VR = 540V, TJ = 100°C
trr
60 ns
IF = 1A, VGE = 0V, -diF/dt = 200A/μs, VR = 30V
RthJC
0.65 °C/W
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
Notes:
1. Part must be heatsunk for high-temp Ices measurement.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
2. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
ADVANCE TECHNICAL INFORMATION
C
D
E
0.61
20.80 21.34
15.75 16.13
0.80
.024 .031
.819 .840
.620 .635
The product presented herein is under development. The Technical Specifications offered are derived
from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a
"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test
conditions, and dimensions without notice.
e
L
L1
5.45 BSC
19.81 20.32
3.81
.215 BSC
.780 .800
.150 .170
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405 B2 6,759,692
6,710,463
7,005,734 B2 7,157,338B2
7,063,975 B2
6,771,478 B2 7,071,537
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