IXTT50P10 [LITTELFUSE]

Power Field-Effect Transistor,;


型号：	IXTT50P10
厂家：	LITTELFUSE
描述：	Power Field-Effect Transistor,
文件：	总5页 (文件大小：120K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

V_DSS= - 100V

I_D25= - 50A

IXTH50P10

IXTT50P10

Standard

Power MOSFET

R_DS(on)

≤

55mΩ

P-Channel Enhancement Mode

Avalanche Rated

TO-247 (IXTH)

(TAB)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

-100

V_DGR

TO-268 (IXTT)

V_GSS

V_GSM

Continuous

Transient

±20

±30

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

- 50

- 200

I_A

T_C= 25°C

- 50

(TAB)

E_AS

G = Gate

S = Source

D = Drain

TAB = Drain

P_D

T_C= 25°C

300

T_J

T_JM

T_stg

- 55 ... +150

150

- 55 ... +150

°C

Features

T_L

T_SOLD

1.6mm (0.062 in.) from case for 10s

Plastic body for 10s

300

260

°C

^zInternational standard packages

JEDEC TO-247 AD

M_d

Mounting torque (TO-247)

1.13 / 10

Nm/lb.in.

^zLow R_DS(ON)HDMOS^TMprocess

^zRugged polysilicon gate cell structure

^zUnclamped Inductive Switching (UIS)

rated

Weight

TO-247

TO-268

^zLow package inductance (< 5nH)

- easy to drive and to protect

Applications

High side switching

Push-pull amplifiers

DC Choppers

Automatic test equipment

Symbol

Test Conditions

Characteristic Values

Min. Typ. Max.

(T_J= 25°C, unless otherwise specified)

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= - 250 μA

V_DS= V_GS, I_D= - 250μA

V_GS= ±20V, V_DS= 0V

-100

- 3.0

- 5.0

Advantages

±100 nA

Easy to mount with 1 screw

I_DSS

V_DS= 0.8 • V_DSS

V_GS= 0V

- 25 μA

-1 mA

(isolated mounting screw hole)

Space savings

High power density

T_J= 125°C

R_DS(on)

V_GS= -10V, I_D= 0.5 • I_D25, Note 1

55 mΩ

DS98905E(6/08)

IXTH50P10

IXTT50P10

Symbol

Test Conditions

Characteristic Values

TO-247 (IXTH) Outline

(T_J= 25°C, unless otherwise specified)

Min.

Typ.

Max.

g_fs

V_DS= -10V, I_D= 0.5 • I_D25, Note 1

V_GS= 0V, V_DS= - 25V, f = 1MHz

C_iss

C_oss

C_rss

4350

1505

733

∅ P

t_d(on)

t_r

t_d(off)

t_f

Resistive Switching Times

V_GS= -10V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

R_G= 4.7Ω (External)

Terminals: 1 - Gate

2 - Drain

Q_g(on)

Q_gs

140

Dim.

Millimeter

Min. Max.

Inches

Min. Max.

V_GS= -10V, V_DS= 0.5 • V_DSS, I_D= 0.5 • I_D25

A₁

A₂

4.7

2.2

5.3

2.54

2.6

.185 .209

.087 .102

.059 .098

Q_gd

R_thJC

R_thCS

0.42 °C/W

°C/W

b₁

b₂

1.0

1.65

2.87

1.4

2.13

3.12

.040 .055

.065 .084

.113 .123

0.25

.016 .031

.819 .845

.610 .640

20.80 21.46

15.75 16.26

Source-Drain Diode

5.20

5.72 0.205 0.225

19.81 20.32

4.50

.780 .800

.177

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min.

Typ.

Max.

∅P 3.55

3.65

.140 .144

5.89

6.40 0.232 0.252

I_S

V_GS= 0V

- 50

4.32

5.49 .170 .216

I_SM

V_SD

t_rr

Repetitive, pulse width limited by T_JM

I_F= - 25A, V_GS= 0V, Note 1

- 200

- 3.0

TO-268 (IXTT) Outline

I_F= - 25A, di/dt = -100A/μs, V_R= - 50V, V_GS= 0V

180

Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered

by one or more of the following U.S. patents: 4,850,072 5,017,508

4,881,106 5,034,796

4,835,592 4,931,844

5,049,961

5,063,307

5,187,117

5,237,481

5,381,025

5,486,715

6,162,665

6,259,123 B1

6,306,728 B1

6,404,065 B1 6,683,344

6,534,343

6,583,505

6,727,585

6,710,405 B2 6,759,692

6,710,463

7,005,734 B2 7,157,338B2

7,063,975 B2

6,771,478 B2 7,071,537

IXTH50P10

IXTT50P10

Fig. 1. Output Characteristics

@ 25ºC

Fig. 2. Extended Output Characteristics

@ 25ºC

-50

-45

-40

-35

-30

-25

-20

-15

-10

-5

-140

-120

-100

-80

-60

-40

-20

V_GS= -10V

- 9V

- 8V

- 7V

- 6V

- 5V

-2.0

-2

-4

-6

-8 -10 -12 -14 -16 -18 -20

V_{D S}- Volts

0.0

-0.4

-0.8

-1.2

V_{D S}- Volts

-1.6

-2.4

Fig. 3. Output Characteristics

@ 125ºC

Fig. 4. R_DS(on)Normalized to 0.5 I_D25Value

vs. Junction Temperature

-50

-45

-40

-35

-30

-25

-20

-15

-10

-5

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

V_GS= -10V

- 9V

V_GS= - 10V

- 8V

I_D= - 50A

- 7V

- 6V

I_D= - 25A

- 5V

0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0

V_{D S}- Volts

-50 -25

75 100 125 150

T_J- Degrees Centigrade

Fig. 6. Drain Current vs. Case

Temperature

Fig. 5. R_DS(on)Normalized to 0.5 I_D25

Value vs. I_D

-55

-50

-45

-40

-35

-30

-25

-20

-15

-10

-5

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

V_GS= - 10V

T_J= 125ºC

T_J= 25ºC

-50 -25

T_C- Degrees Centigrade

100 125 150

-25

-50 -75

I _D- Amperes

-100

-125

IXTH50P10

IXTT50P10

Fig. 7. Input Admittance

Fig. 8. Transconductance

-150

-125

-100

-75

-50

-25

T_J= - 40ºC

25ºC

125ºC

25ºC

125ºC

-20

-40

-60

-80

-100

-4

-5

-6

-7 -8

V_{G S}- Volts

-9

-10

-11

I _D- Amperes

Fig. 10. Gate Charge

Fig. 9. Source Current vs. Source-To-Drain

Voltage

-150

-125

-100

-75

-50

-25

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

V_DS= - 50V

I_D= - 25A

I_G= -1mA

T_J= 125ºC

100

120

140

-0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5

V_{S D}- Volts

Q _G- nanoCoulombs

Fig. 12. Maximum Transient Thermal

Impedance

Fig. 11. Capacitance

10000

1000

100

1.00

0.10

0.01

iss

oss

rss

= 1MHz

-5

-10 -15 -20 -25 -30 -35 -40

V_{D S}- Volts

10 100

Pulse Width - milliseconds

1000

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS REF: T_50P10(7B) 6-23-08-A

Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently

evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,

and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

IXTT50P10 [LITTELFUSE]

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