T0240NA45E [LITTELFUSE]

Insulated Gate Bipolar Transistor, 316A I(C), 4500V V(BR)CES, N-Channel,;
T0240NA45E
型号: T0240NA45E
厂家: LITTELFUSE    LITTELFUSE
描述:

Insulated Gate Bipolar Transistor, 316A I(C), 4500V V(BR)CES, N-Channel,

栅 晶体管
文件: 总7页 (文件大小:218K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Date:- 1 Dec, 2005  
Data Sheet Issue:- 3  
WESTCODE  
IXYS  
An  
Company  
Provisional Data  
Insulated Gate Bi-Polar Transistor  
Type T0240NA45E  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VCES  
Collector – emitter voltage  
4500  
2800  
±20  
V
V
V
VDC link  
VGES  
Permanent DC voltage for 100 FIT failure rate.  
Peak gate – emitter voltage  
MAXIMUM  
LIMITS  
RATINGS  
UNITS  
IC(DC)  
ICRM  
IECO  
PMAX  
Tj op  
Tstg  
Continuous DC collector current, IGBT (Note 2).  
Repetitive peak collector current, tp=1ms, IGBT.  
Maximum reverse emitter current, tp=1ms, (note 4).  
Maximum power dissipation, IGBT (note 3).  
Operating temperature range.  
316  
A
A
400  
240  
A
2380  
W
°C  
°C  
-40 to +125  
-40 to +125  
Storage temperature range.  
Notes: -  
1) Unless otherwise indicated Tj = 125ºC.  
2) Tsink = 55°C, double side cooled.  
3) Tsink = 25°C, double side cooled.  
4) The Use of an anti-parallel diode is recommended.  
Provisional Data Sheet T0240NA45E Issue 3  
Page 1 of 7  
December, 2005  
WESTCODE An IXYS Company  
Insulated Gate Bi-polar Transistor Type T0240NA45E  
Characteristics  
UNITS  
PARAMETER  
MIN TYP MAX TEST CONDITIONS  
-
3.6  
4.7  
-
3.9  
5.0  
2.89  
7.54  
7.5  
8
IC = 240A, VGE = 15V, Tj = 25°C  
IC = 240A, VGE = 15V  
V
V
V
VCE(sat)  
Collector – emitter saturation voltage  
-
-
VT0  
Threshold voltage  
Slope resistance  
Gate threshold voltage  
Collector – emitter cut-off current  
Gate leakage current  
Input capacitance  
Turn-on delay time  
Rise time  
Current range: 240 – 720A  
rT  
-
-
m
VGE(TH)  
ICES  
IGES  
Cies  
td(on)  
tr(I)  
5.5  
6.3  
4
VCE = VGE, IC = 200mA  
VCE = VCES, VGE = 0V  
V
mA  
µA  
nF  
µs  
µs  
µC  
J
-
-
-
-
-
-
-
-
-
-
-
±200 VGE = ±20V  
40  
1.3  
1.1  
-
-
-
VCE = 25V, VGE = 0V, f = 1MHz  
-
Qg(on)  
Eon  
Turn-on gate charge  
Turn-on energy  
20  
-
IC =240A, VCE = 0.5VCES  
,
0.73  
1.0  
3.0  
-
VGE = ±15V,  
td(off)  
tf  
Turn-off delay time  
Fall time  
-
µs  
µs  
µC  
J
Ω,  
Rg(ON)= 10  
-
Ω,  
Rg(OFF)= 8  
Qg(off)  
Eoff  
Turn-off gate charge  
Turn-off energy  
40  
-
0.88  
-
-
-
42  
61  
135  
7
Double side cooled  
Collector side cooled  
Emitter side cooled  
K/kW  
K/kW  
K/kW  
kN  
RthJK  
Thermal resistance junction to sink  
-
-
-
F
Mounting force  
Weight  
5
-
-
Wt  
0.5  
-
kg  
Notes:-  
1) Unless otherwise indicated Tj=125°C.  
Provisional Data Sheet T0240NA45E Issue 3  
Page 2 of 7  
December, 2005  
WESTCODE An IXYS Company  
Insulated Gate Bi-polar Transistor Type T0240NA45E  
Curves  
Figure 1 – Typical collector-emitter saturation voltage  
characteristics  
Figure 2 – Typical output characteristic  
400  
1000  
T0240NA45E  
AD issue 3  
T0240NA45E  
AD issue 3  
VGE=+15V  
Tj =25°C  
350  
25°C  
125°C  
300  
VGE = 20V  
VGE = 17V  
VGE = 15V  
VGE = 12V  
250  
200  
150  
100  
50  
100  
0
10  
1
2
3
4
5
6
0
1
2
3
4
5
6
7
Collector to emitter saturation voltage - VCE(SAT) (V)  
Maximum instantaneous forward voltage - VFM (V)  
Figure 3 – Typical output characteristic  
Figure 4 – Typical turn-on gate charge  
400  
8
T0240NA45E  
AD issue 3  
T0240NA45E  
AD issue 3  
VCE=2800V  
VGE=±15V  
Tj=125°C  
Tj =125°C  
350  
300  
VGE = 20V  
VGE = 17V  
VGE = 15V  
VGE = 12V  
6
4
2
250  
200  
150  
100  
50  
IC=240A  
IC=150A  
0
5
10  
15  
20  
25  
30  
2
3
4
5
6
7
Gate resistance - RG(on) ()  
Collector to emitter saturation voltage - VCE(SAT) (V)  
Provisional Data Sheet T0240NA45E Issue 3  
Page 3 of 7  
December, 2005  
WESTCODE An IXYS Company  
Insulated Gate Bi-polar Transistor Type T0240NA45E  
Figure 6 – Typical turn-on delay time vs gate  
resistance  
Figure 5 – Typical turn-off gate charge  
14  
3
T0240NA45E  
AD issue 3  
T0240NA45E  
AD issue 3  
VCE=2800V  
VGE=±15V  
Tj=125°C  
VCE=2800V  
VGE=±15V  
Tj=125°C  
IC=240A  
IC=150A  
13  
12  
11  
10  
2
1
0
IC=240A  
IC=150A  
5
10  
15  
20  
25  
30  
5
10  
15  
20  
25  
30  
Gate resistance - RG(off) ()  
Gate resistance - RG(on) ()  
Figure 7 – Typical turn-off delay time vs. gate  
resistance  
Figure 8 – Typical turn-on energy vs. collector current  
2
800  
T0240NA45E  
AD issue 3  
T0240NA45E  
AD issue 3  
VCE=2800V  
VGE=±15V  
Tj=125°C  
RG(on)=10W  
VGE=±15V  
Tj=125°C  
VCE=2800V  
IC=240A  
1.5  
600  
400  
200  
0
VCE=2000V  
VCE=1000V  
IC=150A  
1
0.5  
0
5
10  
15  
20  
25  
30  
0
100  
200  
300  
Gate resistance - RG(off) ()  
Collector current - IC (A)  
Provisional Data Sheet T0240NA45E Issue 3  
Page 4 of 7  
December, 2005  
WESTCODE An IXYS Company  
Insulated Gate Bi-polar Transistor Type T0240NA45E  
Figure 10 – Typical turn-off energy vs. collector  
current  
Figure 9 – Typical turn-on energy vs. di/dt  
1000  
1100  
T0240NA45E  
AD issue 3  
T0240NA45E  
AD issue 3  
VCE=2800V  
RG(off)=8  
GE=±15V  
Tj=125°C  
VCE=2800V  
VGE=±15V  
Tj=125°C  
V
800  
600  
400  
200  
0
900  
IC=240A  
VCE=2000V  
700  
500  
300  
100  
IC=150A  
VCE=1000V  
0
100  
200  
300  
600  
800  
1000  
1200  
1400  
Collector current - IC (A)  
Commutation rate - di/dt (A/µs)  
Figure 11 – Turn-off energy vs voltage  
Figure 12 – Safe operating area  
500  
900  
T0240NA45E  
AD issue 3  
VGE=±15V  
IC=240A  
T0240NA45E  
AD issue 3  
RG(off)=8  
GE=±15V  
Tj=125°C  
Tj=125°C  
800  
700  
600  
500  
400  
300  
200  
100  
0
V
400  
300  
200  
100  
0
IC=150A  
IC=100A  
0
1000  
2000  
3000  
4000  
5000  
6000  
0
1000  
2000  
3000  
Collector-emitter voltage - VCE (V)  
Collector-emitter voltage - VCE (V)  
Provisional Data Sheet T0240NA45E Issue 3  
Page 5 of 7  
December, 2005  
WESTCODE An IXYS Company  
Insulated Gate Bi-polar Transistor Type T0240NA45E  
Figure 13 – Transient thermal impedance  
1
T0240NA45E  
AD issue 3  
Emitter  
0.1  
0.01  
Collector  
Double side  
0.001  
0.0001  
0.00001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
Time (s)  
Provisional Data Sheet T0240NA45E Issue 3  
Page 6 of 7  
December, 2005  
WESTCODE An IXYS Company  
Insulated Gate Bi-polar Transistor Type T0240NA45E  
Outline Drawing & Ordering Information  
171A107  
ORDERING INFORMATION  
(Please quote 10 digit code as below)\  
T0240  
Fixed type  
Code  
NA  
Fixed Outline  
Code  
45  
E
Voltage Grade  
4500V  
Fixed format code  
Typical order code: T0240NA45E (VCES = 4500V)  
IXYS Semiconductor GmbH  
Edisonstraße 15  
D-68623 Lampertheim  
Tel: +49 6206 503-0  
Fax: +49 6206 503-627  
E-mail: marcom@ixys.de  
Westcode Semiconductors Ltd  
Langley Park Way, Langley Park,  
Chippenham, Wiltshire, SN15 1GE.  
Tel: +44 (0)1249 444524  
WESTCODE  
Fax: +44 (0)1249 659448  
An IXYS Company  
E-mail: WSL.sales@westcode,com  
IXYS Corporation  
3540 Bassett Street  
Santa Clara CA 95054 USA  
Tel: +1 (408) 982 0700  
Fax: +1 (408) 496 0670  
E-mail: sales@ixys.net  
Westcode Semiconductors Inc  
3270 Cherry Avenue  
Long Beach CA 90807 USA  
Tel: +1 (562) 595 6971  
Fax: +1 (562) 595 8182  
E-mail: WSI.sales@westcode.com  
www.westcode.com  
www.ixys.com  
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed  
except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd.  
Westcode Semiconductors Ltd.  
©
In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice.  
Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to  
the conditions and limits contained in this report.  
Provisional Data Sheet T0240NA45E Issue 3  
Page 7 of 7  
December, 2005  

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