VUC36-16GO2 [LITTELFUSE]
Silicon Controlled Rectifier, 48.67A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, MODULE-8;
| 型号： | VUC36-16GO2 |
| 厂家： | 
LITTELFUSE |
| 描述： | Silicon Controlled Rectifier, 48.67A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, MODULE-8 局域网 栅 栅极 |
| 文件： | 总2页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VUC 36
IdAVM
ITAVM
=
=
39 A
31 A
Three Phase
Rectifier Bridge
with Fast Diodes and "Softstart" Thyristor
VRRM = 1200/1600 V
4
3
2
2
4
8
1
VRSM
VRRM
Type
7
6
5
V
V
1
6
7
1300
1700
1200
1600
VUC 36-12go2
VUC 36-16go2
3
8
5
Symbol
Conditions
Maximum Ratings
Diode Thyristor
Features
• Package with DCB ceramic base plate
• Isolation voltage 3600 V~
• Planar passivated chips
• Fast recovery diodes to reduce EMI
• Separate thyristor for softstart
• Solderable terminals
IdAV
IdAVM
ITAVM
TK = 85°C, module
module
TK = 85°C, DC
34
39
-
-
-
31
A
A
A
IFSM, ITSM
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine 300
t = 8.3 ms (60 Hz), sine 330
400
440
A
A
• UL registered E 72873
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine 270
t = 8.3 ms (60 Hz), sine 300
360
400
A
A
Applications
• Input rectifier for switching power
supplies (SMPS)
• Softstart capacitor charging
• Electric drives and auxiliaries
I2t
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine 450
t = 8.3 ms (60 Hz), sine 460
800
810
A2s
A2s
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine 365
t = 8.3 ms (60 Hz), sine 380
650
670
A2s
A2s
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature & power cycling
• Up to 10 dB lower EMI/RFI
compared to standard rectifier
(di/dt)cr
TVJ = TVJM
repetitive, IT = 50 A
150
A/µs
f= 400 Hz, tP = 200 µs
VD = 2/3 VDRM
IG = 0.3 A
diG /dt = 0.3 A/µs
non repetitive, IT = ITAVM
500
200
A/µs
V/µs
(dv/dt)cr
TVJ = TVJM; VDR = 2/3 VDRM
RGK = ∞; method 1 (linear voltage rise)
VRGM
PGM
10
10
V
Dimensions in mm (1 mm = 0.0394")
TVJ = TVJM
IT = ITAVM
tp = 30 µs
tp = 10 ms
<
<
W
1
0.5
W
W
PGAVM
TVJ
TVJM
Tstg
-40...+125
125
-40...+125
°C
°C
°C
VISOL
50/60 Hz, RMS
IISOL < 1 mA
t = 1 min
t = 1 s
3000
3600
V~
V~
Md
Mounting torque
(M5)
2-2.5
Nm
(10-32 UNF)
18-22
lb.in.
Weight
typ.
28
g
Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions.
20100709b
© 2010 IXYS All rights reserved
1 - 2
VUC 36
VUC 36
Symbol
IR, ID
Conditions
Characteristic Values
Diode Thyristor
VR = VRRM; VD = VDRM
TVJ = TVJM
TVJ = 25°C
<
5
<
<
5
mA
< 0.3
0.3 mA
VF, VT
IF = 55 A; IT = 45 A
TVJ = 25°C
<1.85
<
1.4
V
V
VT0
rT
For power-loss calculations only
TVJ = 125°C
1.2
16
0.85
10 mΩ
VGT
IGT
VD = 6 V
VD = 6 V
TVJ = 25°C
TVJ = 25°C
<
<
1.5 V
80 mA
VGD
IGD
VD = 2/3 VDRM
VD = 2/3 VDRM
TVJ = TVJM
TVJ = TVJM
<
<
0.2
5
V
mA
IL
tG = 30 μs; IG = 0.3 A
diG/dt = 0.3 A/μs
TVJ = 25°C
<
300 mA
IH
VD = 6 V; RGK = ∞
TVJ = 25°C
<
<
100 mA
tgd
VD = ½VDRM; IG = 0.3 A TVJ = 25°C
diG/dt = 0.3 A/μs
2.5 μs
tq
IT = 15 A; tp = 300 μs; -di/dt = 10 A/μs; TVJ = 125°C
VR = 100 V; dv/dt = 20 V/μs; VD = 2/3 VDRM
typ. 130 μs
μs
trr
IF = 10 A; VR = ½VRRM TVJ = 25°C
< 1.5
-
-di/dt = 10 A/μs
RthJC
RthJH
per thyristor (diode); DC current
per module
per thyristor (diode); DC current
per module
1.4
0.233
2.0
0.9 K/W
- K/W
1.1 K/W
- K/W
0.333
dS
dA
a
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
7
7
mm
mm
50 m/s2
IXYS reserves the right to change limits, test conditions and dimensions.
20100709b
© 2010 IXYS All rights reserved
2 - 2
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