LBSS139WT3G [LRC]
Power MOSFET 200 mAmps, 50 Volts NâChannel SCâ70;
| 型号： | LBSS139WT3G |
| 厂家： | 
LESHAN RADIO COMPANY |
| 描述： | Power MOSFET 200 mAmps, 50 Volts NâChannel SCâ70 |
| 文件： | 总5页 (文件大小：539K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LESHAN RADIO COMPANY, LTD.
Power MOSFET
200 mAmps, 50 Volts
N–Channel SC–70
LBSS139WT1G
3
Typical applications are dc–dc converters, power management in
portable and battery–powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
1
• Low Threshold Voltage (V GS(th): 0.5V...1.5V) makes it ideal for low
voltage applications
2
SOT–323 / SC – 70
• Miniature SC–70 Surface Mount Package saves board space
• Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
200 mAMPS
50 VOLTS
ESD Protected:1500V
•
R DS(on) = 3.5 W
o
N - Channel
MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
3
d
Symbol
VDSS
Value
50
Unit
Vdc
Vdc
mA
Rating
Drain–to–Source Voltage
g
1
Gate–to–Source Voltage – Continuous
Drain Current
VGS
± 20
– Continuous @ T = 25°C
ID
IDM
200
800
A
s
2
– Pulsed Drain Current (t ≤ 10 µs)
p
Total Power Dissipation @ T = 25°C
PD
150
mW
A
MARKING DIAGRAM
& PIN ASSIGNMENT
Operating and Storage Temperature
Range
TJ,
T
– 55 to
150
°C
stg
Thermal Resistance – Junction–to–Ambient
RθJA
TL
833
260
°C/W
°C
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
J2
J2 = Device Code
M
= Month Code
ORDERING INFORMATION
Device
Package
Shipping
LBSS139WT1G
LBSS139WT3G
SC-70
SC-70
3000 Tape & Reel
10000 Tape & Reel
Rev .O 1/5
LESHAN RADIO COMPANY, LTD.
LBSS139WT1G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
V(BR)DSS
50
–
–
Vdc
(VGS = 0 Vdc, ID = 250 µAdc)
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
µAdc
–
–
–
–
0.1
0.5
Gate–Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1.)
IGSS
–
–
±10
µAdc
Gate–Source Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.5
–
1.5
Vdc
Static Drain–to–Source On–Resistance
(VGS = 2.75 Vdc, ID < 200 mAdc, TA = –40°C to +85°C)
(VGS = 5.0 Vdc, ID = 200 mAdc)
rDS(on)
Ohms
–
–
5.6
–
10
3.5
Forward Transconductance
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)
gfs
100
–
–
mmhos
pF
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
(VDG = 25 Vdc, VGS = 0, f = 1 MHz)
Ciss
Coss
Crss
–
–
–
40
12
50
25
3.5
5.0
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
td(on)
td(off)
–
–
–
–
20
20
ns
(VDD = 30 Vdc, ID = 0.2 Adc,)
Turn–Off Delay Time
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
Rev .O 2/5
LESHAN RADIO COMPANY, LTD.
LBSS139WT1G
TYPICAL ELECTRICAL CHARACTERISTICS
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
V
= 3.5 V
V
DS
= 10 V
25°C
T = 25°C
GS
J
-55°C
V
= 3.25 V
= 3.0 V
GS
150°C
V
GS
V
= 2.75 V
GS
V
= 2.5 V
GS
0.1
0
0
1
2
3
4
5
6
7
8
9
10
0
0.5
V
1
1.5
2
2.5
3
3.5
4
4.5
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, GATE-TO-SOURCE VOLTAGE (VOLTS)
GS
Figure 2. Transfer Characteristics
Figure 1. On–Region Characteristics
2.2
2
1.25
I
D
= 1.0 mA
V
I
= 10 V
GS
= 0.8 A
1.8
1.6
1.4
1.2
1
1.125
1
D
V
I
= 4.5 V
GS
= 0.5 A
D
0.875
0.8
0.6
-ā55
0.75
-ā55
-5
45
95
145
-30
-5
20
45
70
95
120
145
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 3. On–Resistance Variation with
Temperature
Figure 4. Threshold Voltage Variation
with Temperature
10
V
= 40 V
DS
T = 25°C
J
8
6
4
2
0
I
D
= 200 mA
0
500
1000
1500
2000
2500
3000
Q , TOTAL GATE CHARGE (pC)
T
Figure 5. Gate Charge
Rev .O 3/5
LESHAN RADIO COMPANY, LTD.
LBSS139WT1G
TYPICAL ELECTRICAL CHARACTERISTICS
10
9
8
V
GS
= 2.5 V
V
GS
= 2.75 V
7
6
5
4
3
150°C
8
150°C
7
6
5
25°C
4
25°C
-55°C
3
2
1
-55°C
2
1
0
0.05
0.1
0.15
0.2
0.25
0
0.05
0.1
0.15
0.2
0.25
I , DRAIN CURRENT (AMPS)
D
I , DRAIN CURRENT (AMPS)
D
Figure 7. On–Resistance versus Drain Current
Figure 6. On–Resistance versus Drain Current
4.5
6
5.5
5
V
GS
= 4.5 V
V
GS
= 10 V
150°C
150°C
4
3.5
3
4.5
4
3.5
3
2.5
2
25°C
25°C
2.5
2
-55°C
-55°C
1.5
1
1.5
1
0
0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5
0
0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5
I , DRAIN CURRENT (AMPS)
D
I , DRAIN CURRENT (AMPS)
D
Figure 9. On–Resistance versus Drain Current
Figure 8. On–Resistance versus Drain Current
1
120
100
80
T = 150°C
J
25°C
-55°C
0.1
60
40
C
iss
0.01
C
oss
20
0
C
rss
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
0
5
10
15
20
25
V , DIODE FORWARD VOLTAGE (VOLTS)
SD
Figure 10. Body Diode Forward Voltage
Figure 11. Capacitance
Rev .O 4/5
LESHAN RADIO COMPANY, LTD.
LBSS139WT1G
SC
-
70
D
NOTES:
e1
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
MILLIMETERS
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
E
H
E
DIM
A
A1
A2
b
c
D
E
e
MIN
0.80
0.00
NOM
0.90
0.05
MAX
1.00
0.10
MIN
0.032
0.000
MAX
0.040
0.004
1
2
0.7 REF
0.35
0.18
2.10
1.24
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
1.30
0.65 BSC
0.425 REF
2.10
0.026 BSC
0.017 REF
0.083
e1
L
H
E
c
2.00
2.40
0.079
0.095
A2
A
0.05 (0.002)
L
GENERIC
A1
MARKING DIAGRAM
SOLDERING FOOTPRINT*
M
XX
0.65
0.025
0.65
0.025
1
XX
M
= Specific Device Code
= Date Code
G
= Pb−Free Package
1.9
0.075
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
0.9
0.035
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
Rev .O 5/5
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