LT3471EDD [Linear]
Dual 1.3A, 1.2MHz Boost/Inverter in 3mm ???? 3mm DFN; 双1.3A , 1.2MHz的升压/逆变器采用3mm ???? 3mm DFN封装![LT3471EDD](http://pdffile.icpdf.com/pdf1/p00071/img/icpdf/LT3471_372517_icpdf.jpg)
型号: | LT3471EDD |
厂家: | ![]() |
描述: | Dual 1.3A, 1.2MHz Boost/Inverter in 3mm ???? 3mm DFN |
文件: | 总16页 (文件大小:266K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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LT3471
Dual 1.3A, 1.2MHz
Boost/Inverter in
3mm × 3mm DFN
U
FEATURES
DESCRIPTIO
■
1.2MHz Switching Frequency
The LT®3471 dual switching regulator combines two 42V,
1.3A switches with error amplifiers that can sense to
ground providing boost and inverting capability. The low
■
Low VCESAT Switches: 330mV at 1.3A
■
High Output Voltage: Up to 40V
■
Wide Input Range: 2.4V to 16V
VCESAT bipolar switches enable the device to deliver high
■
Inverting Capability
current outputs in a small footprint. The LT3471 switches
at 1.2MHz, allowing the use of tiny, low cost and low
profile inductors and capacitors. High inrush current at
start-up is eliminated using the programmable soft-start
function, where an external RC sets the current ramp rate.
A constant frequency current mode PWM architecture
resultsinlow,predictableoutputnoisethatiseasytofilter.
■
5V at 630mA from 3.3V Input
■
12V at 320mA from 5V Input
■
–12V at 200mA from 5V Input
■
Uses Tiny Surface Mount Components
■
Low Shutdown Current: <1µA
■
Low Profile (0.75mm) 10-Lead 3mm × 3mm
DFN Package
The LT3471 switches are rated at 42V, making the device
idealforboostconvertersupto±40VaswellasSEPICand
flyback designs. Each channel can generate 5V at up to
630mA from a 3.3V supply, or 5V at 510mA from four
alkaline cells in a SEPIC design. The device can be config-
ured as two boosts, a boost and inverter or two inverters.
U
APPLICATIO S
■
Organic LED Power Supply
■
Digital Cameras
■
White LED Power Supply
Cellular Phones
Medical Diagnostic Equipment
Local ±5V or ±12V Supply
TFT-LCD Bias Supply
xDSL Power Supply
■
The LT3471 is available in a low profile (0.75mm) 10-lead
3mm × 3mm DFN package.
■
■
, LTC and LT are registered trademarks of Linear Technology Corporation.
■
■
U
TYPICAL APPLICATIO
OLED Driver
2.2µH
V
OLED Driver Efficiency
OUT1
V
IN
7V
3.3V
95
350mA
90.9k
15k
4.7µF
CONTROL 1
90
SW1
4.7k
V
= 7V
OUT1
SHDN/SS1
FB1N
FB1P
85
80
75
70
65
60
55
50
0.33µF
V
V
= –7V
REF
OUT1
0.1µF
V
V
LT3471
IN
IN
10µF
4.7k
15k
FB2N
FB2P
CONTROL 2
SHDN/SS2
GND
SW2
0.33µF
75pF
105k
1µF
10µH
15µH
V
–7V
250mA
OUT2
V
IN
200
0
100
300
400
10µF
I
(mA)
OUT
3471 TA01b
3471 TA01
3471f
1
LT3471
W W U W
U W
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ABSOLUTE AXI U RATI GS
PACKAGE/ORDER I FOR ATIO
(Note 1)
TOP VIEW
ORDER PART
NUMBER
VIN Voltage .............................................................. 16V
SW1, SW2 Voltage ....................................–0.4V to 42V
FB1N, FB1P, FB2N, FB2P Voltage ....... 12V or VIN – 1.5V
SHDN/SS1, SHDN/SS2 Voltage .............................. 16V
VREF Voltage ........................................................... 1.5V
Maximum Junction Temperature ......................... 125°C
Operating Temperature Range (Note 2) .. –40°C to 85°C
Storage Temperature Range ................. –65°C to 125°C
FB1N
FB1P
1
2
3
4
5
10 SW1
9
8
7
6
SHDN/SS1
LT3471EDD
V
REF
11
V
IN
FB2P
FB2N
SHDN/SS2
SW2
DD PART MARKING
LBHM
DD PACKAGE
10-LEAD (3mm × 3mm) PLASTIC DFN
TJMAX = 125°C, θJA = 43°C/ W, θJC = 3°C/ W
EXPOSED PAD (PIN 11) IS GND
MUST BE SOLDERED TO PCB
Consult LTC Marketing for parts specified with wider operating temperature ranges.
The ● denotes specifications which apply over the full operating
ELECTRICAL CHARACTERISTICS
temperature range, otherwise specifications are TA = 25°C. VIN = VSHDN = 3V unless otherwise noted.
PARAMETER
CONDITIONS
MIN
TYP
2.1
MAX
UNITS
Minimum Operating Voltage
Reference Voltage
2.4
V
0.991
0.987
1.000
1.009
1.013
V
V
●
Reference Voltage Current Limit
Reference Voltage Load Regulation
Reference Voltage Line Regulation
Error Amplifier Offset
(Note 3)
1
1.4
0.1
0.03
±2
mA
%/100µA
%/V
0mA ≤ I ≤ 100µA (Note 3)
0.2
0.08
±3
REF
2.6V ≤ V ≤ 16V
IN
Transition from Not Switching to Switching, V = V
= 1V
FBN
mV
FBP
FB Pin Bias Current
(Note 3)
●
60
100
4
nA
Quiescent Current
V
V
= 1.8V, Not Switching
2.5
0.01
1.2
94
mA
SHDN
SHDN
Quiescent Current in Shutdown
Switching Frequency
= 0.3V, V = 3V
1
µA
IN
1
1.4
MHz
Maximum Duty Cycle
90
86
%
%
●
Minimum Duty Cycle
Switch Current Limit
15
%
At Minimum Duty Cycle
At Maximum Duty Cycle (Note 4)
1.5
0.9
2.05
1.45
2.6
2.0
A
A
Switch V
I
= 1.3A (Note 5)
= 5V
330
440
1
mV
µA
V
CESAT
SW
Switch Leakage Current
SHDN/SS Input Voltage High
SHDN Input Voltage Low
SHDN Pin Bias Current
V
0.01
SW
1.8
Quiescent Current ≤ 1µA
0.3
V
V
V
= 3V, V = 4V
22
0
36
0.1
µA
µA
SHDN
SHDN
IN
= 0V
Note 1: Absolute Maximum Ratings are those values beyond which the life of
Note 3: Current flows out of the pin.
a device may be impaired.
Note 4: See Typical Performance Characteristics for guaranteed current
Note 2: The LT3471E is guaranteed to meet performance specifications from
0°C to 70°C. Specifications over the –40°C to 85°C operating temperature
range are assured by design, characterization and correlation with statistical
process controls.
limit vs duty cycle.
Note 5: V
is 100% tested at wafer level.
CESAT
3471f
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LT3471
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TYPICAL PERFOR A CE CHARACTERISTICS
Quiescent Current
vs Temperature
VREF Voltage vs VREF Current
VREF Voltage vs Temperature
2.6
2.4
2.2
2.0
1.8
1.6
1.010
1.005
1.000
0.995
0.990
VREF
VOLTAGE
100mV/DIV
–50 –25
0
25
50
75 100 125
–50 –25
0
25
50
75 100 125
TEMPERATURE (°C)
TEMPERATURE (°C)
VREF CURRENT 200µA/DIV
3741 G03
3471 G01
3471 G02
SHDN/SS Current
vs SHDN/SS Voltage
Switch Saturation Voltage
vs Switch Current
Current Limit vs Duty Cycle
2.2
800
700
600
500
400
300
200
100
0
T
= 25°C
A
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
VIN = 3.3V
TYPICAL
90°C
GUARANTEED
SHDN/SS
CURRENT
20µV/DIV
25°C
V
IN > VSHDN/SS
SHDN/SS VOLTAGE 1V/DIV
3741 G04
0
20
40
60
80
100
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
DUTY CYCLE (%)
SW CURRENT (A)
3471 G05
3471 G06
Oscillator Frequency
vs Temperature
Peak Switch Current
vs SHDN/SS Voltage
Start-Up Waveform
(Figure 2 Circuit)
1.50
1.45
1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.05
1.00
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
T
= 25°C
A
ISUPPLY
1A/DIV
VOUT1
2V/DIV
VOUT2
5V/DIV
CONTROL 1 AND 2
5V/DIV
0.5ms/DIV
3471 G09
–50
0
25
50
75 100 125
–25
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8 2.0
TEMPERATURE (°C)
V
(V)
SHDN/SS
3471 G07
3471 G08
3471f
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LT3471
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PI FU CTIO S
FB1N (Pin 1): Negative Feedback Pin for Switcher 1. and minimize the metal trace area connected to this pin to
Connect resistive divider tap here. Minimize trace area at minimize EMI.
FB1N. Set VOUT = VFB1P(1 + R1/R2), or connect to ground
SHDN/SS2 (Pin 7): Shutdown and Soft-Start Pin. Tie to
for inverting topologies.
1.8V or more to enable device. Ground to shut down. Soft-
FB1P (Pin 2): Positive Feedback Pin for Switcher 1. Con- start function is provided when the voltage at this pin is
nect either to VREG or a divided down version of VREG, or ramped slowly to 1.8V with an external RC circuit.
connect to a resistive divider tap for inverting topologies.
VIN (Pin 8): Input Supply. Must be locally bypassed.
V
REF (Pin 3): 1.00V Reference Pin. Can supply up to 1mA
SHDN/SS1(Pin9):SameasSHDN/SS2butforSwitcher 1.
Note: taking either SHDN/SS pin high will enable the part.
Each switcher is individually enabled with its respective
SHDN/SS pin.
of current. Do not pull this pin high. Must be locally
bypassed with no less than 0.01µF and no more than 1µF.
A 0.1µF ceramic capacitor is recommended. Use this pin
as the positive feedback reference or connect a resistor
divider here for a smaller reference voltage.
SW1 (Pin 10): Same as SW2 but for Switcher 1.
Exposed Pad (Pin 11): Ground. Connect directly to local
ground plane. This ground plane also serves as a heat sink
for optimal thermal performance.
FB2P (Pin 4): Same as FB1P but for Switcher 2.
FB2N (Pin 5): Same as FB1N but for Switcher 2.
SW2 (Pin 6): Switch Pin for Switcher 2 (Collector of
internal NPN power switch). Connect inductor/diode here
W
BLOCK DIAGRA
10 SW1
FB1P
2
+
–
–
+
DRIVER
A1
FB1N
R
Q1
1
A2
R
Q
C
S
C
C
+
–
V
V
REF
IN
1.00V
0.01Ω
8
9
3
Σ
REFERENCE
RAMP
GENERATOR
SHDN/SS1
LEVEL
SHIFTER
GND
11
6
SW2
FB2P
FB2N
4
5
+
–
+
DRIVER
A3
R
C
Q2
A4
R
Q
–
S
C
C
+
–
SHDN/SS2
LEVEL
SHIFTER
7
0.01Ω
Σ
RAMP
GENERATOR
GND
1.2MHz
OSCILLATOR
3471 F01
Figure 1. Block Diagram
3471f
4
LT3471
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OPERATIO
The LT3471 uses a constant frequency, current mode
control scheme to provide excellent line and load regula-
tion. Refer to the Block Diagram. At the start of each
oscillator cycle, the SR latch is set, which turns on the
power switch, Q1 (Q2). A voltage proportional to the
switch current is added to a stabilizing ramp and the
resulting sum is fed into the positive terminal of the PWM
comparator A2 (A4). When this voltage exceeds the level
at the negative input of A2 (A4), the SR latch is reset,
turning off the power switch Q1 (Q2). The level at the
negative input of A2 (A4) is set by the error amplifier A1
(A3) and is simply an amplified version of the difference
between the negative feedback voltage and the positive
feedback voltage, usually tied to the reference voltage
taking either SHDN/SS pin above 1.8V. Disabling the part
is done by grounding both SHDN/SS pins. The soft-start
feature of the LT3471 allows for clean start-up conditions
by limiting the amount of voltage rise at the output of
comparator A1 and A2, which in turn limits the peak
switching current. The soft-start feature for each switcher
isenabledbyslowlyrampingthatswitcher’sSHDN/SSpin,
using an RC network, for example. Typical resistor and
capacitor values are 0.33µF and 4.7kΩ, allowing for a
start-uptimeontheorderofmilliseconds.TheLT3471has
a current limit circuit not shown in the Block Diagram. The
switch current is constantly monitored and not allowed to
exceed the maximum switch current (typically 1.6A). If the
switch current reaches this value, the SR latch is reset
regardless of the state of the comparator A2 (A4). Also not
shown in the Block Diagram is the thermal shutdown
circuit. If the temperature of the part exceeds approxi-
mately160°C,bothlatchesareresetregardlessofthestate
of comparators A2 and A4. The current limit and thermal
shutdown circuits protect the power switch as well as the
external components connected to the LT3471.
V
REG. In this manner, the error amplifier sets the correct
peak current level to keep the output in regulation. If the
error amplifier’s output increases, more current is deliv-
ered to the output. Similarly, if the error decreases, less
current is delivered. Each switcher functions indepen-
dently but they share the same oscillator and thus the
switchersarealwaysinphase. Enablingthepartisdoneby
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APPLICATIONS INFORMATION
Duty Cycle
where VFBN is connected between R1 and R2 (see the
Typical Applications section for examples).
The typical maximum duty cycle of the LT3471 is 94%.
The duty cycle for a given application is given by:
Select values of R1 and R2 according to the following
equation:
|VOUT | + |VD | – |V |
IN
DC =
⎛ VOUT
⎝ VREF – 1⎠
⎞
|VOUT | + |VD | – |VCESAT
|
R1= R2
⎜
⎟
Where VD is the diode forward voltage drop and VCESAT is
in the worst case 330mV (at 1.3A)
A good value for R2 is 15k which sets the current in the
resistor divider chain to 1.00V/15k = 67µA.
The LT3471 can be used at higher duty cycles, but it must
beoperatedinthediscontinuousconductionmodesothat
the actual duty cycle is reduced.
VFBP is usually just tied to VREF = 1.00V, but VFBP can also
be tied to a divided down version of VREF or some other
voltage as long as the absolute maximum ratings for the
feedback pins are not exceeded (see Absolute Maximum
Ratings).
Setting Output Voltage
Setting the output voltage depends on the topology used.
For normal noninverting boost regulator topologies:
For inverting topologies, VFBN is tied to ground and VFBP
is connected between R1 and R2. R2 is between VFBP and
R1
R2
⎛
⎜
⎝
⎞
⎟
⎠
VOUT = V
1+
FBP
3471f
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LT3471
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APPLICATIONS INFORMATION
VREF and R1 is between VFBP and VOUT (see the Applica-
tions section for examples). In this case:
pin has reached about 1.1V. The soft-start function will go
away once the voltage at the SHDN/SS pin exceeds 1.8V.
SeethePeakSwitchCurrentvsSHDN/SSVoltagegraphin
the Typical Performance Characteristics section. The rate
of voltage rise at the SHDN/SS pin can easily be controlled
with a simple RC network connected between the control
signal and the SHDN/SS pin. Typical values for the RC
network are 4.7kΩ and 0.33µF, giving start-up times on
the order of milliseconds. This RC time constant can be
adjusted to give different start-up times. If different values
of resistance are to be used, keep in mind the SHDN/SS
Current vs SHDN/SS voltage graph along with the Peak
Switch Current vs SHDN/SS Voltage graph, both found in
the Typical Performance Characteristics section. The im-
pedancelookingintotheSHDN/SSpindependsonwhether
the SHDN/SS is above or below VIN. Normally SHDN/SS
willnotbedrivenaboveVIN, andthustheimpedancelooks
like 100kΩ in series with a diode. If the voltage of the
SHDN/SS pin is above VIN, the impedance looks more like
50kΩ in series with a diode. This 100kΩ or 50kΩ imped-
ance can have a slight effect on the start-up time if you
choose the R in the RC soft-start network too large.
Another consideration is selecting the soft-start time so
that the soft-start feature is dominated by the RC network
and not the capacitor on VREF. (See VREF voltage reference
section of the Applications Information for details.)
R1
R2
⎛
⎜
⎝
⎞
⎟
⎠
VOUT = VREF
Select values of R1 and R2 according to the following
equation:
⎛ VOUT
⎝ VREF
⎞
R1= R2
⎜
⎟
⎠
A good value for R2 is 15k, which sets the current in the
resistor divider chain to 1.00V/15k = 67µA.
Switching Frequency and Inductor Selection
TheLT3471switchesat1.2MHz,allowingforsmallvalued
inductors to be used. 4.7µH or 10µH will usually suffice.
Choose an inductor that can handle at least 1.4A without
saturating, and ensure that the inductor has a low DCR
(copper-wire resistance) to minimize I2R power losses.
Note that in some applications, the current handling
requirements of the inductor can be lower, such as in the
SEPIC topology where each inductor only carries one half
ofthetotalswitchcurrent.Forbetterefficiency,usesimilar
valued inductors with a larger volume. Many different
sizes and shapes are available from various manufactur-
ers. Chooseacorematerialthathaslowlossesat1.2MHz,
such as ferrite core.
CAPACITOR SELECTION
Low ESR (equivalent series resistance) capacitors should
beusedattheoutputtominimizetheoutputripplevoltage.
Multi-layer ceramic capacitors are an excellent choice, as
they have extremely low ESR and are available in very
small packages. X5R dielectrics are preferred, followed by
X7R, as these materials retain the capacitance over wide
voltage and temperature ranges. A 4.7µF to 15µF output
capacitor is sufficient for most applications, but systems
withverylowoutputcurrentsmayneedonlya1µFor2.2µF
output capacitor. Solid tantalum or OS-CON capacitors
can be used, but they will occupy more board area than a
ceramicandwillhaveahigherESR.Alwaysuseacapacitor
with a sufficient voltage rating.
Table 1. Inductor Manufacturers
Sumida
TDK
(847) 956-0666
(847) 803-6100
(714) 852-2001
www.sumida.com
www.tdk.com
Murata
www.murata.com
Soft-Start and Shutdown Features
To shut down the part, ground both SHDN/SS pins. To
shut down one switcher but not the other one, ground that
switcher’s SHDN/SS pin. The soft-start feature provides a
waytolimittheinrushcurrentdrawnfromthesupplyupon
start-up. To use the soft-start feature for either switcher,
slowly ramp up that switcher’s SHDN/SS pin. The rate of
voltage rise at the output of the switcher’s comparator (A1
or A3 for switcher 1 or switcher 2 respectively) tracks the
rate of voltage rise at the SHDN/SS pin once the SHDN/SS
Ceramic capacitors also make a good choice for the input
decoupling capacitor, which should be placed as close as
possible to the LT3471. A 4.7µF to 10µF input capacitor is
3471f
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LT3471
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APPLICATIONS INFORMATION
L1
2.2µH
D1
V
OUT1
V
IN
7V
10
SW1
R3
C
C3
R
PL
SS1
CONTROL 1
1.8V
0V
90.9k
33pF
4.7µF
4.7k
9
1
2
3
SHDN/SS1
FB1N
FB1P
R4
15k
C
SS1
0.33µF
V
REF
V
IN
8
7
C2
0.1µF
V
LT3471
2.6V TO 4.2V
Li-Ion
IN
10µF
5
4
R2
15k
R
FB2N
FB2P
SS2
CONTROL 2
1.8V
0V
4.7k
SHDN/SS2
GND
SW2
C
SS2
0.33µF
11
6
C5
1µF
C6
75pF
L3
15µH
R1
105k
L2
10µH
V
OUT2
V
IN
–7V
C4
10µF
D2
3471 F02
C1, C2: X5R OR X7R 6.3V
C3, C4: X5R OR X7R 10V
C5: XR5 OR X7R 16V
D1, D2: ON SEMICONDUCTOR MBRM-120
L1: SUMIDA CR43-2R2
L2: SUMIDA CDRH4D18-100
L3: SUMIDA CDRH4D18-150
C
: OPTIONAL
PL
Figure 2. Li-Ion OLED Driver
Supply Current of Figure 2 During
Start-Up without Soft-Start RC Network
Supply Current of Figure 2 During
Start-Up with Soft-Start RC Network
ISUPPLY
0.5A/DIV
ISUPPLY
0.5A/DIV
VOUT1
2V/DIV
VOUT1
2V/DIV
0.1ms/DIV
3471 F02b
0.2ms/DIV
3471 F02c
sufficient for most applications. Table 2 shows a list of
several ceramic capacitor manufacturers. Consult the
manufacturers for detailed information on their entire
selection of ceramic parts.
affect the stability of the overall system. The ESR of any
capacitor, along with the capacitance itself, contributes a
zero to the system. For the tantalum and OS-CON capaci-
tors, this zero is located at a lower frequency due to the
highervalueoftheESR, whilethezeroofaceramiccapaci-
tor is at a much higher frequency and can generally be
ignored.
Table 2. Ceramic Capacitor Manufacturers
Taiyo Yuden
AVX
(408) 573-4150
(803) 448-9411
(714) 852-2001
www.t-yuden.com
www.avxcorp.com
www.murata.com
A phase lead zero can be intentionally introduced by
placing a capacitor (CPL) in parallel with the resistor (R3)
betweenVOUT andVFB asshowninFigure2.Thefrequency
of the zero is determined by the following equation.
3471f
Murata
ThedecisiontouseeitherlowESR(ceramic)capacitorsor
the higher ESR (tantalum or OS-CON) capacitors can
7
LT3471
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APPLICATIONS INFORMATION
1
VREG VOLTAGE REFERENCE
ƒZ =
2π •R3 •CPL
Pin3oftheLT3471isabandgapvoltagereferencethathas
been divided down to 1.00V and buffered for external use.
This pin must be bypassed with at least 0.01µF and no
more than 1µF. This will ensure stability as well as reduce
the noise on this pin. The buffer has a built-in current limit
of at least 1mA (typically 1.4mA). This not only means that
you can use this pin as an external reference for supple-
mental circuitry, but it also means that it is possible to
provide a soft-start feature if this pin is used as one of the
feedback pins for the error amplifier. Normally the soft-
start time will be dominated by the RC time constant
discussed in the soft-start and shutdown section. How-
ever, because of the finite current limit of the buffer for the
By choosing the appropriate values for the resistor and
capacitor, the zero frequency can be designed to improve
the phase margin of the overall converter. The typical
target value for the zero frequency is between 35kHz to
55kHz. Figure 3 shows the transient response of the step-
up converter from Figure 2 without the phase lead capaci-
tor CPL. Although adequate for many applications, phase
margin is not ideal as evidenced by 2-3 “bumps” in both
the output voltage and inductor current. A 33pF capacitor
for CPL results in ideal phase margin, which is revealed in
Figure 4 as a more damped response and less overshoot.
V
REG pin, it will take some time to charge up the bypass
capacitor. During this time, the voltage at the VREG pin will
ramp up, and this action provides an alternate means for
soft-starting the circuit. If the largest recommended by-
pass capacitor is used, 1µF, the worst-case (longest) soft-
start function that would be provided from the VREF pin is:
VOUT
200mV/DIV
AC COUPLED
IL1
0.5A/DIV
AC COUPLED
1µF •1.00V
= 1.0ms
1.0mA
LOAD CURRENT
100mA/DIV
AC COUPLED
Choose the RC network such that the soft-start time is
longer than this time, or choose a smaller bypass capaci-
tor for the VREF pin (but always larger than 0.01µF) so that
theRCnetworkdominatesthesoft-startingoftheLT3471.
The voltage at the VREF pin can also be divided down and
used for one of the feedback pins for the error amplifier.
This is especially useful in LED driver applications, where
the current through the LEDs is set using the voltage
reference across a sense resistor in the LED chain. Using
a smaller or divided down reference leads to less wasted
power in the sense resistor. See the Typical Applications
section for an example of LED driving applications.
50µs/DIV
3471 F03
Figure 3. Transient Response of Figure 2’s Step-Up
Converter without Phase Lead Capacitor
VOUT
200mV/DIV
AC COUPLED
IL1
0.5A/DIV
AC COUPLED
LOAD CURRENT
100mA/DIV
AC COUPLED
DIODE SELECTION
50µs/DIV
3471 F04
ASchottkydiodeisrecommendedforusewiththeLT3471.
For high efficiency, a diode with good thermal character-
istics at high currents should be used such as the On
Figure 4. Transient Response of Figure 2’s Step-Up
Converter with 33pF Phase Lead Capacitor
3471f
8
LT3471
U
W U U
APPLICATIONS INFORMATION
SemiconductorMBRM120. Thisisa20Vdiode. Wherethe
switch voltage exceeds 20V, use the MBRM140, a 40V
diode. These diodes are rated to handle an average for-
ward current of 1.0A. In applications where the average
forward current of the diode is less than 0.5A, use the
Philips PMEG 2005, 3005, or 4005 (a 20V, 30V or 40V
diode, respectively).
Compensation—Theory
Like all other current mode switching regulators, the
LT3471 needs to be compensated for stable and efficient
operation. Two feedback loops are used in the LT3471: a
fast current loop which does not require compensation,
and a slower voltage loop which does. Standard Bode plot
analysis can be used to understand and adjust the voltage
feedback loop.
LAYOUT HINTS
As with any feedback loop, identifying the gain and phase
contribution of the various elements in the loop is critical.
Figure 6 shows the key equivalent elements of a boost
converter. Because of the fast current control loop, the
power stage of the IC, inductor and diode have been
replaced by the equivalent transconductance amplifier
The high speed operation of the LT3471 demands careful
attention to board layout. You will not get advertised
performance with careless layout. Figure 5 shows the
recommended component placement.
g
mp. gmp actsasacurrentsourcewheretheoutputcurrent
CONTROL 1
GND
CONTROL 2
GND
is proportional to the VC voltage. Note that the maximum
C
SS1
C
SS2
output current of gmp is finite due to the current limit in the
IC.
R
SS1
R
SS2
GND
C4
From Figure 6, the DC gain, poles and zeroes can be
calculated as follows:
C1
V
OUT2
L1
L2
L3
2
Output Pole: P1=
V
CC
•
V
OUT1
D1
C5
•
2 • π •RL •COUT
SW1
10
SW2
6
1
Error Amp Pole: P2 =
2 • π •RO •CC
1
Error Amp Zero: Z1=
2 • π •RC •CC
9
8
7
D2
GND
C3
GND
SHDN/SS1
SHDN/SS2
LT3471
PIN 11 GND
VREF
VOUT
1
2
DC GAIN: A =
• gma •RO • gmp •RL •
1
V
FB1N FB1P
FB2P FB2N
REF
ESR Zero: Z2 =
1
2
3
4
5
2 • π •RESR •COUT
R4
R2
V
2 •RL
IN
R3
V
R1
V
RHP Zero: Z3 =
OUT1
OUT2
2 • π • VOUT2 •L
C2
fS
3
High Frequency Pole: P3 >
3471 F05
1
Figure 5. Suggested Layout Showing a Boost on SW1 and an
Inverter on SW2. Note the Separate Ground Returns for All High
Current Paths (Using a Multilayer Board)
PhaseLeadZero:Z4 =
2 • π •R1•CPL
1
PhaseLeadPole:P4 =
R1•R2
R1+R2
2 • π •CPL •
3471f
9
LT3471
U
W U U
APPLICATIONS INFORMATION
Table 3. Bode Plot Parameters
–
Parameter
Value
20
Units
Ω
Comment
g
mp
V
OUT
R
L
Application Specific
Application Specific
Application Specific
Not Adjustable
Not Adjustable
Adjustable
+
C
R
R
L
PL
ESR
C
4.7
10
µF
OUT
C
OUT
1.00V
REFERENCE
R
mΩ
MΩ
pF
ESR
+
–
V
C
R
0.9
90
g
O
ma
R1
R2
R
R
O
C
C
C
C
C
33
pF
C
PL
3471 F06
R
55
kΩ
kΩ
kΩ
V
Not Adjustable
Adjustable
C
C : COMPENSATION CAPACITOR
C
C
C
: OUTPUT CAPACITOR
R1
R2
90.9
15
OUT
: PHASE LEAD CAPACITOR
PL
ma
mp
Adjustable
g
g
: TRANSCONDUCTANCE AMPLIFIER INSIDE IC
: POWER STAGE TRANSCONDUCTANCE AMPLIFIER
V
OUT
7
Application Specific
Application Specific
Not Adjustable
Not Adjustable
Application Specific
Not Adjustable
R : COMPENSATION RESISTOR
C
L
O
R : OUTPUT RESISTANCE DEFINED AS V
R : OUTPUT RESISTANCE OF g
DIVIDED BY I
LOAD(MAX)
OUT
V
IN
3.3
50
V
ma
R1, R2: FEEDBACK RESISTOR DIVIDER NETWORK
: OUTPUT CAPACITOR ESR
g
g
µmho
mho
µH
ma
R
ESR
9.3
2.2
1.2
mp
L
Figure 6. Boost Converter Equivalent Model
f
MHz
S
The Current Mode zero is a right half plane zero which can
be an issue in feedback control design, but is manageable
with proper external component selection.
From Figure 7, the phase is –115° when the gain reaches
0dB giving a phase margin of 65°. This is more than
adequate. The crossover frequency is 50kHz.
Using the circuit of Figure 2 as an example, Table 3 shows
the parameters used to generate the Bode plot shown in
Figure 7.
70
60
50
40
30
20
10
0
0
–50
–100
–150
–200
–250
–300
–350
–400
–10
GAIN
–20
PHASE
–30
100
1k
10k
100k
1M
FREQUENCY (Hz)
3471 F07
Figure 7. Bode Plot of 3.3V to 7V Application
3471f
10
LT3471
U
TYPICAL APPLICATIO S
Li-Ion OLED Driver
L1
2.2µH
D1
V
OUT1
V
9
IN
7V
10
SW1
R3
C6
C3
4.7µF
R
500mA WHEN V = 4.2V
SS1
IN
IN
CONTROL 1
1.8V
0V
90.9k
33pF
4.7k
350mA WHEN V = 3.3V
1
SHDN/SS1
FB1N
250mA WHEN V = 2.6V
IN
2
R4
15k
C
FB1P
SS1
3
0.33µF
V
REF
V
V
IN
8
7
CONTROL
0V TO 1V
C2
0.1µF
V
LT3471
2.6V TO 4.2V
Li-Ion
IN
C1
10µF
R5
20k
5
4
R2
15k
FB2N
FB2P
CONTROL 2
1.8V
0V
R
4.7k
SS2
SHDN/SS2
GND
R6
10k
SW2
C
SS2
0.33µF
11
6
C5
1µF
C6
75pF
L3
15µH
R1
105k
L2
15µH
V
OUT2
V
IN
–7V TO –4V
–7V WHEN V
–4V WHEN V
C4
= 0V
D2
CONTROL
CONTROL
10µF
= 1
3471 TA02
–7V, 300mA WHEN V = 4.2V
IN
–7V, 250mA WHEN V = 3.3V
IN
–7V, 200mA WHEN V = 2.6V
IN
C1, C2: X5R OR X7R 6.3V
C3, C4: X5R OR X7R 10V
C5: XR5 OR X7R 16V
C6: OPTIONAL
D1, D2: ON SEMICONDUCTOR MBRM-120
L1: SUMIDA CR43-2R2
L2: SUMIDA CDRH4D18-100
L3: SUMIDA CDRH4D18-150
Li-Ion OLED Driver Efficiency
95
90
85
80
75
70
65
60
55
V
= 7V
OUT
V
= 4.2V
IN
V
IN
= 3.3V
V
= 2.6V
IN
V
= 4.2V
IN
= 3.3V
V
IN
V
= 2.6V
IN
V
= –7V
100
OUT
50
0
400
500
200
300
(mA)
I
OUT
3471 TA02b
3471f
11
LT3471
U
TYPICAL APPLICATIO S
Single Li-Ion Cell to 5V, 12V Boost Converter
L1
3.3µH
V
OUT1
D1
5V
V
900mA IF V = 4.2V
IN
IN
10
630mA IF V = 3.3V
IN
R1
C5
100pF
C3
10µF
R
SS1
CONTROL 1
1.8V
OV
425mA IF V = 2.6V
IN
20k
4.7k
SW1
9
1
2
3
SHDN/SS1
FB1N
FB1P
R2
4.99k
C
SS1
0.33µF
V
REF
8
7
V
C2
0.1µF
IN
V
LT3471
IN
2.6V TO 4.2V
C1
4
5
4.7µF
R
FB2P
FB2N
SS2
CONTROL 2
1.8V
0V
4.7k
SHDN/SS2
GND
SW2
C
SS2
0.33µF
11
6
L2
6.8µH
V
OUT2
D2
12V
300mA IF V = 4.2V
V
IN
IN
C4
10µF
C6
220pF
210mA IF V = 3.3V
IN
R3
54.9k
145mA IF V = 2.6V
IN
R4
4.99k
3471 TA03
C1-C3: X5R OR X7R 6.3V
C4: X5R OR X7R 16V
D1, D2: ON SEMICONDUCTOR MBRM-120
L1: SUMIDA CR43-3R3
L2: SUMIDA CR43-6R8
3471f
12
LT3471
U
TYPICAL APPLICATIO S
Li-Ion 20 White LED Driver
L1
2.2µH
D1
V
9
IN
C3
I
OUT1
10
SW1
0.22µF
R
20mA
SS1
CONTROL 1
1.8V
4.7k
1
2
3
SHDN/SS1
FB1N
FB1P
OV
C
SS1
0.33µF
V
REF
R1
90.9k
8
7
V
C2
0.1µF
IN
V
LT3471
10 WHITE LEDs
IN
2.6V TO 4.2V
C1
4
5
4.7µF
R2
10k
R
4.7k
FB2P
FB2N
SS2
CONTROL 2
1.8V
OV
SHDN/SS2
GND
SW2
C
SS2
0.33µF
11
6
4.99Ω
L2
2.2µH
D2
V
IN
C4
I
OUT2
0.22µF
20mA
C1, C2: X5R OR X7R 6.3V
C3, C4: X5R OR X7R 50V
D1, D2: ON SEMICONDUCTOR MBRM-140
L1, L2: SUMIDA CDRH2D-2R2
10 WHITE LEDs
4.99Ω
3471 TA04
3471f
13
LT3471
U
TYPICAL APPLICATIO S
Li-Ion or 4-Cell Alkaline to 3.3V and 5V SEPIC
C3
4.7µF
L1
10µH
V
OUT1
D1
3.3V
V
640mA AT V = 6.5V
IN
IN
550mA AT V = 5V
C4
15µF
IN
L2
470mA AT V = 4V
IN
C7
56pF
10µH
410mA AT V = 3.3V
IN
10
SW1
R1
R
340mA AT V = 2.6V
IN
SS1
CONTROL 1
34.8k
4.7k
9
1
2
3
1.8V
SHDN/SS1
FB1N
FB1P
OV
R2
15k
C
SS1
0.33µF
V
REF
8
7
C2
0.1µF
V
IN
V
IN
LT3471
2.6V TO 6.5V
C1
4
5
4.7µF
R
SS2
4.7k
FB2P
FB2N
CONTROL 2
1.8V
OV
SHDN/SS2
GND
SW2
C
SS2
0.33µF
11
6
C5
10µF
L3
10µH
V
OUT2
D2
5V
500mA AT V = 6.5V
V
IN
IN
C6
15µF
420mA AT V = 5V
IN
C8
R3
L4
10µH
360mA AT V = 4V
56pF 60.4k
C1, C3, C5: X5R OR X7R 10V
C4, C6: X5R OR X7R 6.3V
D1, D2: ON SEMICONDUCTOR MBRM-120
L1-L4: MURATA LQH43CN100K032
IN
300mA AT V = 3.3V
IN
250mA AT V = 2.6V
IN
R4
15k
3471 TA05
3471f
14
LT3471
U
PACKAGE DESCRIPTIO
DD Package
10-Lead Plastic DFN (3mm × 3mm)
(Reference LTC DWG # 05-08-1698)
0.675 ±0.05
3.50 ±0.05
2.15 ±0.05 (2 SIDES)
1.65 ±0.05
PACKAGE
OUTLINE
0.25 ± 0.05
0.50
BSC
2.38 ±0.05
(2 SIDES)
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
R = 0.115
TYP
6
0.38 ± 0.10
10
3.00 ±0.10
(4 SIDES)
1.65 ± 0.10
(2 SIDES)
PIN 1
TOP MARK
(SEE NOTE 6)
(DD10) DFN 1103
5
1
0.25 ± 0.05
0.50 BSC
0.75 ±0.05
0.200 REF
2.38 ±0.10
(2 SIDES)
0.00 – 0.05
BOTTOM VIEW—EXPOSED PAD
NOTE:
1. DRAWING TO BE MADE A JEDEC PACKAGE OUTLINE M0-229 VARIATION OF (WEED-2).
CHECK THE LTC WEBSITE DATA SHEET FOR CURRENT STATUS OF VARIATION ASSIGNMENT
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE
TOP AND BOTTOM OF PACKAGE
3471f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tation that the interconnection ofits circuits as described herein willnotinfringe on existing patentrights.
15
LT3471
U
TYPICAL APPLICATIO
5V to ±12V Dual Supply Boost/Inverting Converter
L1
10µH
D1
V
OUT1
12V
320mA
V
9
IN
10
SW1
R1
C6
C3
4.7µF
CONTROL 1
54.9k
56pF
4.7k
1
2
3
1.8V
SHDN/SS1
FB1N
FB1P
OV
R2
4.99k
0.33µF
V
REF
R3
15k
8
7
V
C2
0.1µF
IN
5V
V
IN
LT3471
C1
4.7µF
4
5
FB2P
FB2N
CONTROL 2
4.7k
1.8V
SHDN/SS2
GND
OV
C7
56pF
SW2
0.33µF
11
6
R4
182k
V
•
•
OUT2
–12V
V
IN
L2
10µH
L3
10µH
200mA
C4
4.7µF
D2
C5
1µF
3471 TA06
C1, C2: X5R OR X7R 6.3V
C3, C4: X5R OR X7R 16V
C5: X5R OR X7R 25V
L1: SUMIDA CR43-10
L2, L3: SUMIDA CLS63-10
D1, D2: ON SEMICONDUCTOR MBRM-120
RELATED PARTS
PART NUMBER
DESCRIPTION
COMMENTS
LT1611
550mA (I ), 1.4MHz, High Efficiency Micropower Inverting
V : 1.1V to 10V, V
= –34V, I = 3mA, I < 1µA,
Q SD
SW
IN
OUT(MAX)
DC/DC Converter
ThinSOT Package
LT1613
550mA (I ), 1.4MHz, High Efficiency Step-Up
V : 0.9V to 10V, V
= 34V, I = 3mA, I < 1µA,
Q SD
SW
IN
OUT(MAX)
DC/DC Converter
ThinSOT Package
LT1614
750mA (I ), 600kHz, High Efficiency Micropower Inverting
V : 1V to 12V, V
= –24V, I = 1mA, I < 10µA,
OUT(MAX) Q SD
SW
IN
DC/DC Converter
MS8, S8 Packages
LT1615/LT1615-1
LT1617/LT1617-1
LT1930/LT1930A
LT1931/LT1931A
LT1943 (Quad)
LT1945 (Dual)
LT1946/LT1946A
LT3436
300mA/80mA (I ), High Efficiency Step-Up DC/DC Converters
V
= 1V to 15V, V
= 34V, I = 20µA, I < 1µA,
OUT(MAX) Q SD
SW
IN
ThinSOT Package
350mA/100mA (I ), High Efficiency Micropower Inverting
V
= 1.2V to 15V, V
= –34V, I = 20µA, I < 1µA,
OUT(MAX) Q SD
SW
IN
DC/DC Converters
ThinSOT Package
1A (I ), 1.2MHz/2.2MHz, High Efficiency
V : 2.6V to 16V, V
= 34V, I = 4.2mA/5.5mA,
Q
SW
IN
OUT(MAX)
Step-Up DC/DC Converters
I
< 1µA, ThinSOT Package
SD
1A (I ), 1.2MHz/2.2MHz High Efficiency Micropower Inverting
V
= 2.6V to 16V, V
= –34V, I = 5.8mA, I < 1µA,
Q SD
SW
IN
OUT(MAX)
OUT(MAX)
OUT(MAX)
DC/DC Converters
ThinSOT Package
Quad Boost, 2.6A Buck, 2.6A Boost, 0.3A Boost, 0.4A Inverter
1.2MHz TFT DC/DC Converter
V
= 4.5V to 22V, V
= 40V, I = 10µA, I < 35µA,
Q SD
IN
TSSOP28E Package
Dual Output, Boost/Inverter, 350mA (I ), Constant Off-Time,
V
= 1.2V to 15V, V
= ±34V, I = 40µA, I < 1µA,
Q SD
SW
IN
High Efficiency Step-Up DC/DC Converter
10-Lead MS Package
1.5A (I ), 1.2MHz/2.7MHz, High Efficiency
V : 2.45V to 16V, V
MS8 Package
= 34V, I = 3.2mA, I < 1µA,
OUT(MAX) Q SD
SW
IN
Step-Up DC/DC Converters
3A (I ), 1MHz, 34V Step-Up DC/DC Converter
V : 3V to 25V, V
TSSOP16E Package
= 34V, I = 0.9mA, I < 6µA,
SW
IN
OUT(MAX) Q SD
LT3462/LT3462A
LT3463/LT3463A
300mA (I ), 1.2MHz/2.7MHz, High Efficiency Inverting
V
= 2.5V to 16V, V
= –38V, I = 2.9mA, I < 1µA,
Q SD
SW
IN
OUT(MAX)
OUT(MAX)
DC/DC Converters with Integrated Schottkys
ThinSOT Package
Dual Output, Boost/Inverter, 250mA (I ), Constant Off-Time,
V
= 2.3V to 15V, V
= ±40V, I = 40µA, I < 1µA,
Q SD
SW
IN
High Efficiency Step-Up DC/DC Converters with Integrated
Schottkys
DFN Package
LT3464
85mA (I ), High Efficiency Step-Up DC/DC Converter with
V
= 2.3V to 10V, V
= 34V, I = 25µA, I < 1µA,
OUT(MAX) Q SD
SW
IN
Integrated Schottky and PNP Disconnect
ThinSOT Package
3471f
LT/TP 0804 1K • PRINTED IN USA
LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
16
●
●
(408) 432-1900 FAX: (408) 434-0507 www.linear.com
©LINEAR TECHNOLOGY CORPORATION 2004
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