LT5519 [Linear]
0.7GHz to 1.4GHz High Linearity Upconverting Mixer; 0.7GHz至1.4GHz高线性度上变频混频器
| 型号： | LT5519 |
| 厂家： | 
Linear |
| 描述： | 0.7GHz to 1.4GHz High Linearity Upconverting Mixer |
| 文件： | 总12页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LT5519
0.7GHz to 1.4GHz
High Linearity
Upconverting Mixer
U
FEATURES
DESCRIPTIO
The LT®5519 mixer is designed to meet the high linearity
requirements of wireless and cable infrastructure trans-
mission systems. A high speed, internally 50Ω matched,
LO amplifier drives a double-balanced mixer core, allow-
ing the use of a low power, single-ended LO source. An RF
output transformer is integrated, thus eliminating the
need for external matching components at the RF output,
whilereducingsystemcost, componentcount, boardarea
and system-level variations. The IF port can be easily
matched to a broad range of frequencies for use in many
different applications.
■
Wide RF Frequency Range: 0.7GHz to 1.4GHz
■
17.1dBm Typical Input IP3 at 1GHz
■
On-Chip RF Output Transformer
■
On-Chip 50Ω Matched LO and RF Ports
■
Single-Ended LO and RF Operation
■
Integrated LO Buffer: –5dBm Drive Level
■
Low LO to RF Leakage: – 44dBm Typical
■
Noise Figure: 13.6dB
■
Wide IF Frequency Range: 1MHz to 400MHz
■
Enable Function with Low Off-State Leakage Current
■
Single 5V Supply
Small 16-Lead QUFN Plastic Package
■
The LT5519 mixer delivers +17.1dBm typical input 3rd
order intercept point at 1GHz with IF input signal levels of
–10dBm. The input 1dB compression point is typically
+5.5dBm. The IC requires only a single 5V supply.
APPLICATIO S
■
■
■
Wireless Infrastructure
, LTC and LT are registered trademarks of Linear Technology Corporation.
Cable Downlink Infrastructure
Point-to-Point and Point-to-Multipoint Data
Communications
■
High Linearity Frequency Conversion
U
TYPICAL APPLICATIO
5V
DC
1µF
1000pF
RF Output Power, IM3 and IM2
vs IF Input Power (Two Input Tones)
39nH
10
0
EN
BIAS
V
V
V
CC3
CC1
CC2
P
OUT
10pF
–10
–20
–30
–40
–50
–60
–70
–80
–90
100Ω
BPF
220pF
LT5519
4:1
f
= 1000MHz
RF
LO
LO
IF1
IF2
+
+
IF
IF
RF
RF
P
= –5dBm
= 1140MHz
= 140MHz
= 141MHz
BPF
33pF
f
f
PA
IM3
IM2
–
–
f
220pF
100Ω
T
= 25°C
A
GND
5pF
5pF
85Ω
–16
–12
–8
–4
0
4
+
–
LO
LO
(OPTIONAL)
IF INPUT POWER (dBm/TONE)
5519 F01a
LO INPUT
–5dBm
5519 F01b
Figure 1. Frequency Conversion in Wireless Infrastructure Transmitter
5519f
1
LT5519
W W U W
U
W
U
ABSOLUTE AXI U RATI GS
(Note 1)
PACKAGE/ORDER I FOR ATIO
TOP VIEW
ORDER PART
NUMBER
Supply Voltage ....................................................... 5.5V
Enable Voltage ............................. –0.3V to (VCC + 0.3V)
LO Input Power (Differential)............................ +10dBm
LO+ to LO– Differential DC Voltage .......................... ±1V
LO+ and LO– DC Common Mode Voltage...... –1V to VCC
IF Input Power (Differential) ............................. +10dBm
IF+ and IF– DC Currents ........................................ 25mA
RF+ to RF– Differential DC Voltage...................... ±0.13V
RF+ and RF– DC Common Mode Voltage...... –1V to VCC
Operating Temperature Range .................–40°C to 85°C
Storage Temperature Range ................. –65°C to 125°C
Junction Temperature (TJ).................................... 125°C
16 15 14 13
GND
GND
1
2
3
4
12
11
10
9
LT5519EUF
+
+
RF
IF
17
–
–
RF
IF
GND
GND
5
6
7
8
UF PART
MARKING
UF PACKAGE
16-LEAD (4mm × 4mm) PLASTIC QFN
5519
TJMAX = 125°C, θJA = 37°C/W
EXPOSED PAD (PIN 17) IS GND
MUST BE SOLDERED TO PCB
Consult LTC Marketing for parts specified with wider operating temperature ranges.
ELECTRICAL CHARACTERISTICS
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
MHz
IF Input Frequency Range
LO Input Frequency Range
RF Output Frequency Range
1 to 400
300 to 1800
700 to 1400
MHz
MHz
1GHz Application: VCC = 5VDC, EN = High, TA = 25°C, IF input = 140MHz at –10dBm, LO input = 1.14GHz at –5dBm, RF output measured
at 1GHz, unless otherwise noted. (Test circuit shown in Figure 2) (Notes 2, 3)
PARAMETER
CONDITIONS
Z = 50Ω, with External Matching
MIN
TYP
20
MAX
UNITS
dB
IF Input Return Loss
LO Input Return Loss
RF Output Return Loss
LO Input Power
O
Z = 50Ω
O
17
dB
Z = 50Ω
O
20
dB
–10 to 0
–0.6
17.1
48
dBm
dB
Conversion Gain
Input 3rd Order Intercept
Input 2nd Order Intercept
LO to RF Leakage
–10dBm/Tone, ∆f = 1MHz
dBm
dBm
dBm
dBm
dBm
–10dBm, Single Tone
–44
–40
5.5
LO to IF Leakage
Input 1dB Compression
IF Common Mode Voltage
Noise Figure
Internally Biased
Single-Side Band
1.77
13.6
V
DC
dB
5519f
2
LT5519
DC ELECTRICAL CHARACTERISTICS
(Test Circuit Shown in Figure 2) VCC = 5VDC, EN = High, TA = 25°C, unless otherwise noted. (Note 3)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Enable (EN) Low = OFF, High = ON
Turn-On Time (Note 4)
Turn-Off Time (Note 4)
Input Current
2
6
1
µs
µs
µA
V
= 5V
10
ENABLE
DC
Enable = High (ON)
Enable = Low (OFF)
3
V
DC
V
DC
0.5
Power Supply Requirements (V
Supply Voltage
)
CC
4.5 to 5.25
V
DC
Supply Current
V
= 5V
60
1
70
mA
CC
DC
Shutdown Current
EN = Low
100
µA
Note 1: Absolute Maximum Ratings are those values beyond which the life
Note 3: Specifications over the –40°C to 85°C temperature range are
of a device may be impaired.
Note 2: External components on the final test circuit are optimized for
assured by design, characterization and correlation with statistical process
controls.
operation at f = 1GHz, f = 1.14GHz and f = 140MHz.
Note 4: Turn-On and Turn-Off times are based on the rise and fall times of
the RF output envelope from –40dBm to full power with an IF input power
of –10dBm.
RF
LO
IF
U W
TYPICAL PERFOR A CE CHARACTERISTICS
(Test Circuit Shown in Figure 2)
Shutdown Current
vs Supply Voltage
Supply Current vs Supply Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0
66
64
62
60
T
= 85°C
A
T
= 25°C
A
T
= 85°C
A
58
56
T
= –40°C
A
54
52
50
T
= –40°C
A
T
= 25°C
A
4
4.5
4.75
5
5.25
5.5
4.25
4.5
5
4.25
4
5.25
5.5
4.75
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
5519 G02
5519 G01
5519f
3
LT5519
U W
TYPICAL PERFOR A CE CHARACTERISTICS
V
CC = 5VDC, EN = High, TA = 25°C, IF input = 140MHz at –10dBm, LO input = 1.14GHz at –5dBm, RF output measured at 1000MHz,
unless otherwise noted. For 2-tone inputs: 2nd IF input = 141MHz at –10dBm. (Test Circuit Shown in Figure 2.)
Conversion Gain and SSB Noise
Figure vs RF Output Frequency
IIP3 and IIP2
LO-RF Leakage
vs RF Output Frequency
vs RF Output Frequency
18
16
14
12
10
8
25
23
60
50
–10
–20
–30
–40
–50
–60
LOW SIDE LO
HIGH SIDE LO
LOW SIDE LO
HIGH SIDE LO
IIP2
NF
21
19
40
30
6
HIGH SIDE LO
4
HIGH SIDE LO
IIP3
2
17
15
13
20
10
0
0
LOW SIDE LO
GAIN
LOW SIDE LO
–2
–4
–6
LOW SIDE AND HIGH SIDE LO
500
700
900
1100
1300
1500
500
700
900
1100
1300
1500
500
700
900
1100
1300
1500
RF OUTPUT FREQUENCY (MHz)
RF OUTPUT FREQUENCY (MHz)
RF OUTPUT FREQUENCY (MHz)
5519 G03
5519 G04
5519 G05
Conversion Gain and SSB Noise
Figure vs LO Input Power
LO-RF Leakage
vs LO Input Power
IIP3 and IIP2 vs
LO Input Power
16
14
12
10
8
20
18
16
14
12
10
8
21
20
60
50
0
T
= –40°C
A
T
= 85°C
T
= 25°C
A
NF
T
= 25°C
A
T
= 85°C
A
–10
A
IIP2
19
18
40
30
–20
–30
T
= –40°C
A
6
IIP3
T
A
= 85°C
T
= 25°C
A
4
GAIN
T
= 25°C
17
16
15
20
10
0
A
–40
–50
–60
T
= –40°C
2
6
A
T
= –40°C
A
T = –40°C
A
0
4
T
= 25°C
A
T
= 85°C
A
–2
–4
2
T
= 85°C
A
0
–16
–12
–8
–6
–4
–2
–16
–12
–8
–4
0
4
–16
–12
–8
–4
0
4
LO INPUT POWER (dBm)
LO INPUT POWER (dBm)
LO INPUT POWER (dBm)
5519 G06
5519 G07
5519 G08
IIP3 and IIP2 vs
LO Input Power
RF Output Power and Output IM2 vs
IF Input Power (Two Input Tones)
RF Output Power and Output IM3 vs
IF Input Power (Two Input Tones)
10
0
21
20
60
10
0
LOW SIDE LO
T
= –40°C
T
= –40°C
A
A
IIP2
P
P
OUT
OUT
50
T
= 25°C
T
= 25°C
–10
–20
–30
–40
–50
–60
–70
–80
–90
A
–10
–20
–30
–40
–50
–60
–70
–80
–90
A
T
= 85°C
A
T
= 85°C
HIGH SIDE LO
A
19
18
40
30
T
= 25°C
A
T
= –40°C
T
= 85°C
A
A
HIGH SIDE LO
LOW SIDE LO
IIP3
T
= –40°C
A
17
16
15
20
10
0
T
= 25°C
IM3
IM2
A
T
= 85°C
A
–16
–12
–8
–4
0
4
–16
–12
–8
–4
0
4
–16
–12
–8
–4
0
4
LO INPUT POWER (dBm)
IF INPUT POWER (dBm/TONE)
IF INPUT POWER (dBm/TONE)
5519 G10
5519 G09
5519 G11
5519f
4
LT5519
U W
TYPICAL PERFOR A CE CHARACTERISTICS
VCC = 5VDC, EN = High, TA = 25°C, IF input = 140MHz at –10dBm, LO input = 1.14GHz at –5dBm, RF output measured at 1000MHz,
unless otherwise noted. For 2-tone inputs: 2nd IF input = 141MHz at –10dBm. (Test Circuit Shown in Figure 2.)
IF, LO and RF Port Return Loss
vs Frequency
Conversion Gain, IIP3 and IIP2
vs Supply Voltage
Conversion Gain vs IF Input
Power (One Input Tone)
10
8
60
50
40
30
20
10
0
4
3
0
LOW SIDE LO
–5
2
T
= –40°C
= 25°C
A
HIGH SIDE LO
IIP2
IIP3
1
6
–10
–15
T
0
A
4
–1
–2
–3
–4
–5
–6
T
= 85°C
A
HIGH SIDE LO
LOW SIDE LO
LO PORT
2
–20
–25
–30
IF PORT
RF PORT
1500
0
GAIN
LOW SIDE AND HIGH SIDE LO
4.5 4.75 5.25
–2
4
5
5.5
4.25
–16
–12
–8
–4
0
4
0
500
1000
2000
SUPPLY VOLTAGE (V)
IF INPUT POWER (dBm)
FREQUENCY (MHz)
5519 G14
5519 G12
5519 G13
U
U
U
PI FU CTIO S
GND (Pins 1, 4, 9, 12, 13, 16): Internal Grounds. These
pins are used to improve isolation and are not intended as
DC or RF grounds for the IC. Connect these pins to low
impedance grounds on the PCB for best performance.
IF+, IF– (Pins 2, 3): Differential IF Signal Inputs. A differ-
ential signal must be applied to these pins through DC
blockingcapacitors.Thepinsmustbeconnectedtoground
with100Ω resistors(thegroundsmusteachbecapableof
sinking about 18mA). For best LO leakage performance,
these pins should be DC isolated from each other. An
impedance transformation is required to match the IF in-
puttothedesiredsourceimpedance(typically50Ωor75Ω).
in Figure 2. The 1000pF capacitor should be located as
close to the pins as possible.
VCC3 (Pin 8): Power Supply Pin for the Internal Mixer.
Typical current consumption is about 36mA. This pin
should be externally connected to VCC through an induc-
tor.A39nHinductorisshowninFigure2, thoughthevalue
is not critical.
RF–, RF+ (Pins 10, 11): Differential RF Outputs. One pin
maybeDCconnectedtoalowimpedancegroundtorealize
a 50Ω single-ended output. No external matching compo-
nents are required. A DC voltage should not be applied
acrossthesepins,astheyareinternallyconnectedthrough
a transformer winding.
LO+, LO– (Pins 14, 15): Differential Local Oscillator In-
puts. The LT5519 works well with a single-ended source
driving the LO+ pin and the LO– pin connected to a low
impedance ground. No external 50Ω matching compo-
nents are required. An internal resistor is connected
across these pins; therefore, a DC voltage should not be
applied across the inputs.
EN(Pin5):EnablePin. Whentheappliedvoltageisgreater
than 3V, the IC is enabled. When the applied voltage is less
than 0.5V, the IC is disabled and the DC current drops to
about 1µA.
VCC1 (Pin 6): Power Supply Pin for the Bias Circuits.
Typical current consumption is about 2mA. This pin
should be externally connected to VCC and have appropri-
ate RF bypass capacitors.
VCC2 (Pin 7): Power Supply Pin for the LO Buffer Circuits.
Typical current consumption is about 22mA. This pin
should have appropriate RF bypass capacitors as shown
Exposed Pad (Pin 17): DC and RF ground return for the
entireIC.Thismustbesolderedtotheprintedcircuitboard
low impedance ground plane.
5519f
5
LT5519
W
BLOCK DIAGRA
EXPOSED
PAD
+
–
GND
12
RF
11
RF
10
GND
9
17
13
14
GND
5pF
85Ω
5pF
8
V
CC3
HIGH SPEED
LO BUFFER
10pF
+
–
LO
LO
DOUBLE-
BALANCED
MIXER
15
16
V
6
5
CC1
BIAS
GND
EN
7
1
2
3
4
5519 BD
+
–
V
GND
IF
IF
GND
CC2
TEST CIRCUIT
LO
IN
1140MHz
16
15
–
14
+
13
GND
GND
GND
LO
LO
1
2
12
11
IF
IN
GND
R1
C1
C2
T1
5
140MHz
1
+
+
RF
IF
RF
OUT
1000MHz
2
3
C3
LT5519
4
3
4
10
–
–
RF
IF
R2
9
GND
CC3
GND
EN
V
V
CC2
V
CC1
6
17
5
7
8
RF
GND
EN
L1
0.018" ER = 4.4
0.062"
V
CC
5519 F02
DC
GND
0.018"
C5
C4
REF DES
C1, C2
C3
VALUE
220pF
33pF
SIZE
0402
0402
0402
0603
0402
PART NUMBER
AVX 04023C221KAT2A
AVX 04023A330KAT2A
AVX 04023A102KAT2A
C4
1000pF
1µF
C5
Taiyo Yuden LMK107BJ105MA
Toko LL1005-FH39NJ
L1
39nH
R1, R2
T1
100Ω, 0.1% 0603
4:1 SM-22
IRC PFC-W0603R-03-10R1-B
M/A-COM ETC4-1-2
Figure 2. Test Schematic for the LT5519
5519f
6
LT5519
U
W U U
APPLICATIO S I FOR ATIO
The LT5519 consists of a double-balanced mixer, a high
performance LO buffer and bias/enable circuits. The RF
and LO ports may be driven differentially; however, they
are intended to be used in single-ended mode by connect-
ing one input of each pair to ground. The IF input ports
must be DC-isolated from the source and driven differen-
tially. The IF input should be impedance-matched for the
desired input frequency. The LO input has an internal
broadband 50Ω match with return loss better than 10dB
at frequencies up to 1800MHz. The RF output band ranges
from 700MHz to 1400MHz, with an internal RF trans-
former providing a 50Ω impedance match across the
band. Low side or high side LO injection can be used.
improve the impedance match by canceling excess induc-
tance in the package and transformer. The input capacitor
value required to realize an impedance match at desired
frequency, f, can be estimated as follows:
1
C1 = C2 =
(2πf)2(LIN +LEXT
)
where; f is in units of Hz, LIN and LEXT are in Henry, and C1,
C2 are in Farad. LIN is the differential input inductance of
theLT5519,andisapproximately1.67nH.LEXT represents
the combined inductances of differential external compo-
nents and transmission lines. For the evaluation board
shown in Figure 10, LEXT = 4.21nH. Thus, for f = 140MHz,
the above formula gives C1 = C2 = 220pF.
IF Input Port
Table 1 lists the differential IF input impedance and reflec-
tion coefficient for several frequencies. A 4:1 balun can be
used to transform the impedance up to about 50Ω.
The IF inputs are connected to the emitters of the double-
balanced mixer transistors, as shown in Figure 3. These
pins are internally biased and an external resistor must be
connected from each IF pin to ground to set the current
through the mixer core. The circuit has been optimized to
work with 100Ω resistors, which will result in approxi-
mately 18mA of DC current per side. For best LO leakage
performance, the resistors should be well matched; thus
resistors with 0.1% tolerance are recommended. If LO
leakage is not a concern, then lesser tolerance resistors
can be used. The symmetry of the layout is also important
for achieving optimum LO isolation.
Table 1. IF Input Differential Impedance
FREQUENCY
(MHz)
DIFFERENTIAL
DIFFERENTIAL S11
INPUT IMPEDANCE
MAG
0.663
0.663
0.663
0.663
0.663
0.663
0.663
0.663
ANGLE
180
179
178
177
176
174
171
167
10
44
10.1 + j0.117
10.1 + j0.476
10.1 + j0.751
10.2 + j1.47
10.2 + j1.78
10.2 + j2.53
10.2 + j3.81
10.2 + j5.31
70
140
170
240
360
500
The capacitors shown in Figure 3, C1 and C2, serve two
purposes. They provide DC isolation between the IF+ and
IF– ports, thus preventing DC interactions that could
cause unpredictable variations in LO leakage. They also
LO Input Port
The simplified circuit for the LO buffer input is shown in
Figure 4. The LO buffer amplifier consists of high speed
limitingdifferentialamplifiers,optimizedtodrivethemixer
quad for high linearity. The LO+ and LO– ports can be
driven differentially; however, they are intended to be
driven by a single-ended source. An internal resistor
connected across the LO+ and LO– inputs provides a
broadband 50Ω impedance match. Because of the resis-
tive match, a DC voltage at the LO input is not recom-
mended. If the LO signal source output is not AC coupled,
then a DC blocking capacitor should be used at the LO
input.
100Ω
LT5519
18mA
0.1%
C1
C2
T1
4:1
2
3
+
IF
IF
IN
50Ω
C3
V
CC
–
IF
18mA
100Ω
0.1%
5519 F03
Figure 3. IF Input with External Matching
5519f
7
LT5519
U
W U U
APPLICATIO S I FOR ATIO
+
LT5519
LO
LT5519
RF
5pF
+
11
LO
IN
14
50Ω
220Ω
220Ω
V
CC
–
V
85Ω
CC
5pF
RF
RF
OUT
–
10
LO
50Ω
10pF
15
5519 F04
8
5519 F05
V
CC3
Figure 4. LO Input Circuit
Figure 5. RF Output Circuit
RF+ and RF– pins are connected together through the
secondary windings of the transformer; thus a DC voltage
should not be applied across these pins.
Though the LO input is internally matched to 50Ω, there
may be some cases, particularly at higher frequencies or
with different source impedances, where a further opti-
mized match is desired. Table 2 includes the single-ended
input impedance and reflection coefficient vs frequency
for the LO input for use in such cases.
TheimpedancedatafortheRFoutput,listedinTable3,can
be used to develop matching networks for different load
impedances.
Table 2. Single-Ended LO Input Impedance
Table 3. Single-Ended RF Output Impedance
FREQUENCY
(MHz)
INPUT
IMPEDANCE
S11
FREQUENCY
(MHz)
OUTPUT
S11
MAG
0.223
0.153
0.124
0.119
0.125
0.134
0.144
0.155
0.163
ANGLE
–28.4
–34.7
–29.2
–23.6
–22.7
–25.5
–30.8
–37.1
–43.4
IMPEDANCE
MAG
0.465
0.354
0.227
0.105
0.022
0.093
0.159
0.207
ANGLE
103
200
400
72.3 – j16.1
63.3 – j11.3
61.6 – j7.5
61.9 – j6.0
62.7 – j6.1
63.2 – j7.4
63.3 – j9.5
62.8 – j12.0
61.6 – j14.2
700
800
27.6 + j32.0
39.7 + j32.1
50.9 + j23.5
53.5 + j10.3
48.3 + j1.3
42.0 – j3.1
36.6 – j3.4
33.0 – j2.0
88.1
74.7
65.5
143
600
900
800
1000
1100
1200
1300
1400
1000
1200
1400
1600
1800
–157
–164
–172
Operation at Different Input Frequencies
RF Output Port
On the evaluation board shown in Figure 10, the input of
theLT5519canbeeasilymatchedfordifferentfrequencies
by changing the capacitors, C1, C2 and C3. Capacitors C1
and C2 set the input matching frequency while C3 im-
proves the LO to RF leakage performance. Decreasing the
value of C3 at higher input frequencies reduces its impact
on conversion gain. Table 4 lists some actual values used
at selected frequencies.
AninternalRFtransformer, showninFigure5, reducesthe
mixer-core impedance to provide an impedance of 50Ω
across the RF+ and RF– pins. The LT5519 is designed and
testedwiththeoutputsconfiguredforsingle-endedopera-
tion, asshownintheFigure5;however, theoutputscanbe
used differentially as well. A center tap in the transformer
provides the DC connection to the mixer core and the
transformer provides DC isolation at the RF output. The
5519f
8
LT5519
U
W U U
APPLICATIO S I FOR ATIO
Table 4. Input Capacitor Values vs Frequency
frequency was adjusted to maintain an RF output fre-
quency of 1000MHz.
FREQUENCY
(MHz)
CAPACITANCE (C1, C2)
(pF)
CAPACITANCE (C3)
(pF)
44
2200
820
220
68
33
33
Low Frequency Matching of the RF Output Port
70
Without any external components on the RF output, the
internal transformer of the LT5519 provides a good 50Ω
impedancematchforRFfrequenciesaboveapproximately
850MHz. Below this frequency, the return loss drops
below 10dB and degrades the conversion gain. The addi-
tion of a single 10pF capacitor in series with the RF output
improves the match at lower RF frequencies, shifting the
10dBreturnlosspointtoabout700MHz, asdemonstrated
in Figure 9. This change also results in an improvement of
the conversion gain.
140
240
300
350
440
33
15
39
6.8
6.8
6.8
27
18
The performance was evaluated with the input tuned for
each of these frequencies and the results are summarized
in Figures 6-8. The same IF input balun transformer was
used for all measurements. In each case, the LO input
0
6
5
20
18
16
14
12
10
8
INPUT TUNED FOR EACH TEST FREQUENCY
INPUT TUNED FOR EACH TEST FREQUENCY
V
= 5V
CC
LO
–10
SSB NF
P
= –5dBm
4
HIGH SIDE LO
T
A
= 25°C
3
–20
–30
LOW SIDE
2
1
GAIN
0
HIGH SIDE LO
LOW SIDE LO
–40
–50
–60
LOW SIDE
–1
–2
–3
–4
6
4
HIGH SIDE LO
V
P
A
= 5V
CC
LO
= –5dBm
2
T
= 25°C
0
1
100
200
300
400
500
0
100
200
300
400
500
INPUT FREQUENCY (MHz)
INPUT FREQUENCY (MHz)
5519 F08
5519 F06
Figure 6. Conversion Gain and Single Sideband Noise Figure
vs Tuned IF Input Frequency
Figure 8. LO to RF Leakage vs Tuned IF Input Frequency
0
0
27
25
23
21
19
17
15
13
70
60
50
40
30
20
10
0
INPUT TUNED FOR EACH TEST FREQUENCY
–1
–5
NO C
OUT
LOW SIDE
IIP2
GAIN
C
= 10pF
OUT
–2
–3
–4
–5
–6
–10
–15
–20
–25
–30
HIGH SIDE
HIGH SIDE LO
IIP3
C
= 10pF
LOW SIDE
OUT
RETURN LOSS
V
CC
P
LO
= 5V, T = 25°C
A
NO C
OUT
= –5dBm
–7
–35
1100
1300 1400
1200
700 800 900 1000
100
200
300
500
0
400
RF OUTPUT FREQUENCY (MHz)
INPUT FREQUENCY (MHz)
5519 F09
5519 F07
Figure 9. Conversion Gain and Return Loss vs Output Frequency
Figure 7. IIP3 and IIP2 vs Tuned IF Input Frequency
5519f
9
LT5519
U
TYPICAL APPLICATIO S
(10a) Top Layer Silkscreen
(10b) Top Layer Metal
Figure 10. Evaluation Board Layout
5519f
10
LT5519
U
PACKAGE DESCRIPTIO
UF Package
16-Lead Plastic QFN (4mm × 4mm)
(Reference LTC DWG # 05-08-1692)
0.72 ±0.05
4.35 ± 0.05
2.90 ± 0.05
2.15 ± 0.05
(4 SIDES)
PACKAGE OUTLINE
0.30 ±0.05
0.65 BSC
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
BOTTOM VIEW—EXPOSED PAD
0.75 ± 0.05
R = 0.115
TYP
0.55 ± 0.20
4.00 ± 0.10
(4 SIDES)
15
16
PIN 1
TOP MARK
1
2
2.15 ± 0.10
(4-SIDES)
(UF) QFN 0503
0.30 ± 0.05
0.65 BSC
0.200 REF
0.00 – 0.05
NOTE:
1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC)
2. ALL DIMENSIONS ARE IN MILLIMETERS
3. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
4. EXPOSED PAD SHALL BE SOLDER PLATED
5519f
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tationthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.
11
LT5519
RELATED PARTS
PART NUMBER DESCRIPTION
Infrastructure
COMMENTS
LT5511
LT5512
LT5515
LT5516
LT5517
LT5520
LT5522
High Signal Level Upconverting Mixer
RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer
RF Input to 3GHz, 21dBm IIP3, Integrated LO Buffer
20dBm IIP3, Integrated LO Quadrature Generator
21.5dBm IIP3, Integrated LO Quadrature Generator
21dBm IIP3, Integrated LO Quadrature Generator
15.9dBm IIP3, Single Ended, 50Ω Matched RF and LO Ports
DC-3GHz High Signal Level Downconverting Mixer
1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator
0.8GHz to 1.5GHz Direct Conversion Quadrature Demodulator
40MHz to 900MHz Direct Conversion Quadrature Demodulator
1.3GHz to 2.3GHz High Linearity Upconverting Mixer
600MHz to 2.7GHz High Signal Level Downconverting Mixer
4.5V to 5.25V Supply, 25dBm IIP3 at 900MHz, NF = 12.5dB,
50Ω Single-Ended RF and LO Ports
RF Power Detectors
LT5504
800MHz to 2.7GHz RF Measuring Receiver
80dB Dynamic Range, Temperature Compensated,
2.7V to 5.25V Supply
LTC5505
LTC5507
LTC5508
300MHz to 3GHz RF Power Detectors
100kHz to 1000MHz RF Power Detector
300MHz to 7GHz RF Power Detector
LTC5505-1: –28dBm to +18dBm Range, LTC5505-2: –32dBm to
+12dBm Range,Temperature Compensated, 2.7V to 6V Supply
–34dBm to +14dBm Range, Temperature Compensated,
2.7V to 6V Supply
–32dBm to +12dBm Range, Temperature Compensated,
SC70 Package
LTC5509
300MHz to 3GHz RF Power Detector
36dB Dynamic Range, Temperature Compensated, SC70 Package
LTC5532
300MHz to 7GHz Precision RF Power Detector
Precision V
Offset Control, Adjustable Gain and Offset
OUT
RF Building Blocks
LT5500
1.8GHz to 2.7GHz Receiver Front End
1.8V to 5.25V Supply, Dual-Gain LNA, Mixer LO Buffer
LT5502
400MHz Quadrature IF Demodulator with RSSI
1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain,
90dB RSSI Range
LT5503
LT5506
LT5546
1.2GHz to 2.7GHz Direct IQ Modulator and
Upconverting Mixer
1.8V to 5.25V Supply, Four-Step RF Power Control,
120MHz Modulation Bandwidth
500MHz Quadrature IF Demodulator with VGA
1.8V to 5.25V Supply, 40MHz to 500MHz IF, –4dB to 57dB
Linear Power Gain, 8.8MHz Baseband Bandwidth
500MHz Ouadrature IF Demodulator with
VGA and 17MHz Baseband Bandwidth
1.8V to 5.25V Supply, 40MHz to 500MHz IF,
–7dB to 56dB Linear Power Gain
5519f
LT/TP 0104 1K • PRINTED IN USA
12 LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
●
●
LINEAR TECHNOLOGY CORPORATION 2004
(408) 432-1900 FAX: (408) 434-0507 www.linear.com
相关型号：
LT5519EUF#PBF
LT5519 - 0.7GHz to 1.4GHz High Linearity Upconverting Mixer; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C
Linear
LT5520EUF#PBF
LT5520 - 1.3GHz to 2.3GHz High Linearity Upconverting Mixer; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C
Linear
LT5521EUF#PBF
LT5521 - Very High Linearity Active Mixer; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C
Linear
LT5521EUF#TR
LT5521 - Very High Linearity Active Mixer; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C
Linear
LT5522EUF#TR
LT5522 - 600MHz to 2.7GHz High Signal Level Downconverting Mixer; Package: QFN; Pins: 16; Temperature Range: -40°C to 85°C
Linear
©2020 ICPDF网 联系我们和版权申明