LT5522EUF [Linear]
400MHz to 2.7GHz High Signal Level Downconverting Mixer; 400MHz到2.7GHz的高信号电平下变频混频器
| 型号： | LT5522EUF |
| 厂家： | 
Linear |
| 描述： | 400MHz to 2.7GHz High Signal Level Downconverting Mixer |
| 文件： | 总16页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LT5522
400MHz to 2.7GHz
High Signal Level
Downconverting Mixer
U
FEATURES
DESCRIPTIO
TheLT®5522activedownconvertingmixerisoptimizedfor
high linearity downconverter applications including cable
and wireless infrastructure. The IC includes a high speed
differential LO buffer amplifier driving a double-balanced
mixer. The LO buffer is internally matched for wideband,
single-ended operation with no external components.
■
Internal On-Chip RF Input Transformer
■
50Ω Single-Ended RF and LO Ports
■
High Input IP3: +25dBm at 900MHz
+21.5dBm at 1900MHz
■
Low Power Consumption: 280mW Typical
■
Integrated LO Buffer: Low LO Drive Level
■
High LO-RF and LO-IF Isolation
Wide RF Frequency Range: 0.4GHz to 2.7GHz*
The RF input port incorporates an integrated RF trans-
formerandisinternallymatchedoverthe1.2GHzto2.3GHz
frequency range with no external components. The RF
input match can be shifted down to 400MHz, or up to
2.7GHz, with a single shunt capacitor or inductor, respec-
tively. The high level of integration minimizes the total
solution cost, board space and system-level variation.
■
■
Very Few External Components
Enable Function
4.5V to 5.25V Supply Voltage Range
16-Lead (4mm ×U4mm) QFN Package
■
■
■
APPLICATIO S
The LT5522 delivers high performance and small size
without excessive power consumption.
, LTC and LT are registered trademarks of Linear Technology Corporation.
All other trademarks are the property of their respective owners.
*Operation over a wider frequency range is possible with reduced performance.
Consult factory for information and assistance.
■
Cellular, PCS and UMTS Band Infrastructure
■
CATV Downlink Infrastructure
2.4GHz ISM
High Linearity Downmixer Applications
■
■
U
TYPICAL APPLICATIO
LO INPUT
–5dBm
+
–
1.9GHz Conversion Gain, IIP3, SSB
NF and LO-RF Leakage vs LO Power
LO
LO
LT5522
24
22
20
18
16
14
12
10
8
–10
–20
–30
–40
–50
–60
–70
IIP3
+
IF
IF
140MHz
(TYP)
2.7pF
100pF
+
RF
1850MHz
TO
1910MHz
SSB NF
150nH
150nH
LTC1748
ADC
VGA
LO-RF
LNA
5522 F01
–
RF
–
BIAS/
CONTROL
6
IF = 140MHz
LOW-SIDE LO
4
T
= 25°C
CC
A
2
EN
V
CC1
V
CC2
V
= 5V
0
–11
–9
–7
–5
–3
–1
1
5V
LO INPUT POWER (dBm)
0.01µF
3.3µF
5522 TA01
Figure 1. High Signal Level Downmixer for Wireless Infrastructure
5522fa
1
LT5522
W W U W
U W
U
ABSOLUTE AXI U RATI GS
(Note 1)
PACKAGE/ORDER I FOR ATIO
TOP VIEW
Supply Voltage ...................................................... 5.5V
Enable Voltage ............................... –0.3V to VCC + 0.3V
LO Input Power ............................................... +10dBm
LO+ to LO– Differential DC Voltage ......................... ±1V
LO Input DC Common Mode Voltage...................... ±1V
RF Input Power................................................ +10dBm
RF+ to RF– Differential DC Voltage ........................ ±0.2V
RF Input DC Common Mode Voltage ...................... ±1V
Operating Temperature Range ................ –40°C to 85°C
Storage Temperature Range ................. –65°C to 125°C
Junction Temperature (TJ).................................... 125°C
16 15 14 13
NC
+
1
2
3
4
12 GND
+
RF
11 IF
17
–
–
RF
NC
IF
10
9
GND
5
6
7
8
UF PACKAGE
16-LEAD (4mm × 4mm) PLASTIC QFN
TJMAX = 125°C, θJA = 37°C/W
EXPOSED PAD (PIN 17) IS GND, MUST BE SOLDERED TO PCB
UF PART MARKING
5522
ORDER PART NUMBER
LT5522EUF
Order Options Tape and Reel: Add #TR
Lead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF
Lead Free Part Marking: http://www.linear.com/leadfree/
Consult LTC Marketing for parts specified with wider operating temperature ranges.
DC ELECTRICAL CHARACTERISTICS (Test circuit shown in Figure 2) V
= 5VDC, EN = high, T = 25°C,
CC
A
unless otherwise noted. (Note 3)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Power Supply Requirements (V
Supply Voltage
)
CC
4.5
5
5.25
68
VDC
mA
µA
Supply Current
V
= 5V
56
CC
Shutdown Current
EN = Low
100
Enable (EN) Low = Off, High = On
Input High Voltage (On)
Input Low Voltage (Off)
Enable Pin Input Current
Turn On Time
3
VDC
VDC
µA
0.3
75
EN = 5VDC
55
3
µs
Turn Off Time
5
µs
AC ELECTRICAL CHARACTERISTICS
(Notes 2, 3) (Test circuit shown in Figure 2).
MIN
PARAMETER
CONDITIONS
TYP
MAX
UNITS
RF Input Frequency Range
Shunt Capacitor on Pin 3 (Low Band)
No External Matching (Mid Band)
Shunt Inductor on Pin 3 (High Band)
400
MHz
MHz
MHz
1200 to 2300
2700
2700
LO Input Frequency Range
IF Output Frequency Range
RF Input Return Loss
LO Input Return Loss
IF Output Return Loss
LO Input Power
No External Matching
400
MHz
MHz
dB
Requires Appropriate IF Matching
0.1 to 1000
Z = 50Ω
15
13
O
Z = 50Ω
dB
O
Z = 50Ω
O
18
dB
–10
–5
0
dBm
RF to LO Isolation
50MHz to 2700MHz
>45
dB
5522fa
2
LT5522
AC ELECTRICAL CHARACTERISTICS
140MHz, unless otherwise noted. (Notes 2, 3) (Test circuit shown in Figure 2).
Cellular/PCS/UMTS downmixer application: V = 5V, EN = high,
CC
T = 25°C, P = –7dBm (–7dBm/tone for 2-tone IIP3 tests, ∆f = 1MHz), f = f – 140MHz, P = –5dBm, IF output measured at
A
RF
LO
RF
LO
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Conversion Gain
RF = 450MHz, High Side LO
RF = 900MHz
–2.0
–0.5
–0.2
–0.1
0.2
dB
dB
dB
dB
dB
dB
RF = 1800MHz
–2
RF = 1900MHz
RF = 2100MHz
RF = 2450MHz
–0.7
Conversion Gain vs Temperature
Input 3rd Order Intercept
T = –40°C to 85°C
–0.02
dB/°C
A
RF = 450MHz, High Side LO
RF = 900MHz
22.3
25.0
21.8
21.5
20.0
16.8
dBm
dBm
dBm
dBm
dBm
dBm
RF = 1800MHz
RF = 1900MHz
RF = 2100MHz
RF = 2450MHz
Single Sideband Noise Figure (Note 4)
RF = 900MHz
RF = 1800MHz
RF = 2100MHz
RF = 2450MHz
12.5
13.9
14.3
15.6
dB
dB
dB
dB
LO to RF Leakage
LO to IF Leakage
f
f
= 400MHz to 2700MHz
= 400MHz to 2700MHz
≤–50
≤–49
dBm
dBm
LO
LO
2RF-2LO Output Spurious Product (f = f + f /2)
900MHz: f = 830MHz at –12dBm
–73
–60
dBc
dBc
RF
LO
IF
RF
1900MHz: f = 1830MHz at –12dBm
RF
3RF-3LO Output Spurious Product (f = f + f /3)
900MHz: f = 806.67MHz at –12dBm
–72
–65
dBc
dBc
RF
LO
IF
RF
1900MHz: f = 1806.67MHz at –12dBm
RF
Input 1dB Compression
RF = 450MHz, High Side LO
RF = 900MHz
RF = 1900MHz
12.0
10.8
8.0
dBm
dBm
dBm
1150MHz CATV infrastructure application: V = 5V, EN = high, T = 25°C, RF input = 1150MHz at –12dBm (–12dBm/tone for 2-tone
CC
A
IIP3 tests, ∆f = 1MHz), LO input swept from 1200MHz to 2200MHz, P = –5dBm, IF output measured from 50MHz to 1050MHz unless
LO
otherwise noted. (Note 3) (Test circuit shown in Figure 3).
PARAMETER
CONDITIONS
MIN
TYP
–0.6
23
MAX
UNITS
dB
Conversion Gain
f
f
f
f
f
= 1650MHz, f = 500MHz
IF
LO
LO
LO
LO
LO
Input 3rd Order Intercept
Single Sideband Noise Figure (Note 4)
LO to RF Leakage
= 1650MHz, f = 500MHz
dBm
dB
IF
= 1650MHz, f = 500MHz
14.3
≤–51
≤–45
≤–63
–68
–68
–63
>15
13
IF
= 1200MHz to 2200MHz
= 1200MHz to 2200MHz
dBm
dBm
dBc
dBc
dBc
dBc
dB
LO to IF Leakage
2RF – LO Output Spurious Product
2RF1 – LO Output Spurious Product
2RF2 – LO Output Spurious Product
(RF1 + RF2) – LO Output Spurious Product
RF Input Return Loss
P
= –12dBm (Single Tone), 50MHz ≤ f ≤ 900MHz
RF IF
2-Tone 2nd Order Spurious Outputs
RF1 = 1147MHz, RF2 = 1153MHz, –15dBm/Tone
LO = 1650MHz, Spurs at 644MHz, 656MHz and 650MHz
950MHz to 1350MHz, Z = 50Ω
1200MHz to 2200MHz, Z = 50Ω
O
LO Input Return Loss
dB
O
IF Output Return Loss
50MHz to 1050MHz, Z = 50Ω
10
dB
O
Note 1: Absolute Maximum Ratings are those values beyond which the life
of a device may be impaired.
Note 2: 450MHz, 900MHz and 2450MHz performance measured with the
following external RF input matching. 450MHz: C5 = 8.2pF, 5mm away
from Pin 3 on the 50Ω input line. 900MHz: C5 = 2.2pF at Pin 3. 2450MHz:
L3 = 3.9nH at Pin 3. See Figure 2.
Note 3: Specifications over the –40°C to 85°C operating temperature
range are assured by design, characterization and correlation with
statistical process controls.
Note 4: SSB Noise Figure measurements performed with a small-signal noise
source and bandpass filter on RF input, and no other RF signal applied.
5522fa
3
LT5522
W U
TYPICAL AC PERFOR A CE CHARACTERISTICS
Mid-band RF (no external RF matching)
= 5V, EN = High, T = 25°C, P = –7dBm (–7dBm/tone for 2-tone IIP3 tests, ∆f = 1MHz), P = –5dBm, IF output measured
V
CC
A
RF
LO
at 140MHz, unless otherwise noted. (Test circuit shown in Figure 2).
Conv Gain, IIP3 and SSB NF
Conv Gain, IIP3 and SSB NF
vs RF Frequency (High Side LO)
vs RF Frequency (Low Side LO)
LO Leakage vs LO Frequency
–30
23
21
19
17
15
13
11
9
23
21
19
17
15
13
11
9
T
f
= 25°C
= 140MHz
T
f
= 25°C
= 140MHz
A
IF
A
IF
IIP3
–35
–40
–45
–50
–55
–60
–65
–70
–75
–80
–85
–90
IIP3
LO-RF
LO-IF
SSB NF
SSB NF
T
IF
= 25°C
= 140MHz
A
f
7
7
5
5
3
3
G
C
1
1
G
C
–1
–1
1300
1500
1700
1900
2100
2300
1300
1500
1700
1900
2100
2300
1100 1300 1500
1700 1900 2100 2300 2500
LO FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
5522 G01
5522 G02
5522 G03
Conv Gain and IIP3
vs Temperature (RF = 1800MHz)
Conv Gain, IIP3 and SSB NF
vs LO Power (RF = 1800MHz)
Conv Gain and IIP3 vs Supply
Voltage (RF = 1800MHz)
22
20
18
16
14
12
10
8
22
20
18
16
14
12
10
8
22
20
18
16
14
12
10
8
LOW SIDE LO
IIP3
IIP3
IIP3
HIGH SIDE LO
SSB NF
25°C
85°C
–40°C
25°C
f
f
= 1660MHz
= 140MHz
85°C
LO
IF
–40°C
f
f
= 1660MHz
LO
IF
6
6
6
= 140MHz
4
4
4
G
G
C
C
LOW SIDE LO
HIGH SIDE LO
2
2
2
G
C
0
0
0
f
= 140MHz
–25
IF
–2
–2
–2
–50
0
25
50
75
100
–11
–7
–5
–3
–1
1
–9
4.5
5
5.25
5.5
4.75
TEMPERATURE (°C)
LO INPUT POWER (dBm)
SUPPLY VOLTAGE (V)
5522 G04
5522 G05
5522 G06
Conv Gain and IIP3
vs Temperature (RF = 2100MHz)
Conv Gain, IIP3 and SSB NF
vs LO Power (RF = 2100MHz)
IF OUT, 2 × 2 and 3 × 3 Spurs
vs RF Input Power (Single Tone)
20
18
16
14
12
10
8
20
18
16
14
12
10
8
10
0
IF OUT
LOW SIDE LO
HIGH SIDE LO
IIP3
(RF = 1900MHz)
IIP3
–10
–20
–30
–40
–50
–60
–70
–80
–90
SSB NF
25°C
3RF-3LO
85°C
–40°C
(RF = 1806.67MHz)
f
f
= 1960MHz
= 140MHz
LO
IF
6
6
2RF-2LO
(RF = 1830MHz)
4
4
G
LOW SIDE LO
HIGH SIDE LO
G
C
C
2
2
T
= 25°C
A
f
f
= 1760MHz
LO
IF
0
0
= 140MHz
f
IF
= 140MHz
–25
–2
–2
–50
0
25
50
75
100
–11
–7
–5
–3
–1
1
–9
–21 –18 –15 –12 –9 –6 –3
0
3
6
9
TEMPERATURE (°C)
LO INPUT POWER (dBm)
RF INPUT POWER (dBm)
5522 G07
5522 G08
5522 G09
5522fa
4
LT5522
W U
TYPICAL AC PERFOR A CE CHARACTERISTICS
Low-band RF (C5 = 2.2pF) and high-band RF
(L3 = 3.9nH) V = 5V, EN = High, T = 25°C, P = –7dBm (–7dBm/tone for 2-tone IIP3 tests, ∆f = 1MHz), P = –5dBm, IF output
CC
A
RF
LO
measured at 140MHz, unless otherwise noted. (Test circuit shown in Figure 2).
Low Band Conv Gain, IIP3 and
SSB NF vs RF Frequency
Low Band Conv Gain and IIP3
vs Temperature (RF = 900MHz)
Low Band IF OUT, 2 × 2 and 3 × 3
Spurs vs RF Input Power (Single Tone)
10
0
18
16
14
12
10
8
26
24
22
20
18
16
14
12
10
8
17
15
13
11
9
26
24
22
20
18
16
14
12
10
8
LOW SIDE LO
HIGH SIDE LO
IF OUT
(RF = 900MHz)
HIGH SIDE LO
LOW SIDE LO
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
IIP3
IIP3
T
IF
= 25°C
= 140MHz
A
f
7
3RF-3LO
(RF = 806.67MHz)
SSB NF
6
5
HIGH SIDE LO
LOW SIDE LO
2RF-2LO
(RF = 830MHz)
4
3
G
C
LOW SIDE LO
HIGH SIDE LO
2
1
T
LO
= 25°C
A
0
–1
G
C
f
= 760MHz
f
= 140MHz
–25
IF
–2
600
6
–3
–50
6
100
–18 –15 –12 –9 –6 –3
0
3
6
9
12
700
900 1000 1100 1200
25
50
75
800
0
RF FREQUENCY (MHz)
TEMPERATURE (°C)
RF INPUT POWER (dBm)
5522 G12
5522 G10
5522 G11
LO Leakage vs LO Frequency
(Low Band RF Match)
Low Band Conv Gain and IIP3 vs
Supply Voltage (RF = 900MHz)
Low Band Conv Gain, IIP3 and SSB
NF vs LO Power (RF = 900MHz)
–30
–35
–40
–45
–50
–55
–60
–65
–70
–75
–80
–85
–90
17
15
13
11
9
26
24
22
20
18
16
14
12
10
8
17
15
13
11
9
26
24
22
20
18
16
14
12
10
8
T
f
= 25°C
A
IF
P
= 140MHz
= –5dBm
IIP3
IIP3
LO
LO-IF
25°C
85°C
–40°C
25°C
85°C
–40°C
7
7
f
f
= 760MHz
LO
IF
f
f
= 760MHz
= 140MHz
LO
IF
5
5
LO-RF
SSB NF
= 140MHz
3
3
G
C
G
C
1
1
–1
–1
–3
–3
6
6
5.5
400
600
800
1000
1200
1400
–11
–9
–5
–3
–1
1
4.5
4.75
5
5.25
–7
LO FREQUENCY (MHz)
LO INPUT POWER (dBm)
SUPPLY VOLTAGE (V)
5522 G14
5522 G13
5522 G15
High Band Conv Gain, IIP3, SSB NF
and LO Leakage vs RF Frequency
High Band Conv Gain and IIP3 vs
Temperature (RF = 2450MHz)
High Band Conv Gain, IIP3 and SSB
NF vs LO Power (RF = 2450MHz)
20
18
16
14
12
10
8
0
17
15
13
11
9
18
16
14
12
10
8
20
IIP3
IIP3
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
–110
19
18
17
16
15
14
13
12
11
10
IIP3
SSB NF
LO-IF
SSB NF
LO-RF
f
f
= 2310MHz
LO
IF
7
25°C
85°C
= 140MHz
5
6
6
–40°C
3
4
f
f
= 2310MHz
= 140MHz
T
f
= 25°C
4
LO
IF
A
IF
G
C
= 140MHz
1
2
G
C
2
LOW SIDE LO
G
C
–1
0
0
–2
–3
–2
2200
2300
2500
RF FREQUENCY (MHz)
2600
2700
2400
–50 –25
25
50
75
100
0
–11
–9
–5
–3
–1
1
–7
TEMPERATURE (°C)
LO INPUT POWER (dBm)
5522 G16
5522 G17
5522 G18
5522fa
5
LT5522
W U
TYPICAL AC PERFOR A CE CHARACTERISTICS
CATV infrastructure downmixer
= 5V, EN = High, T = 25°C, P = 1150MHz at –12dBm (–12dBm/tone for 2-tone IIP3 tests, ∆f = 1MHz), LO swept from 1200MHz to
V
CC
A
RF
2200MHz, P = –5dBm, IF output measured from 50MHz to 1050MHz, unless otherwise noted. (Test circuit shown in Figure 3)
LO
Conv Gain, IIP3 and SSB NF
vs IF Output Frequency
2RF-LO Spur vs IF Output
Frequency (P = –12dBm)
LO Leakage vs LO Frequency
RF
26
24
22
20
18
16
14
12
10
8
6
4
2
0
–2
–4
–50
–55
–10
–20
T
= 25°C
LO
A
P
= –5dBm
IIP3
85°C
P
LO
= –8, –5 AND –2dBm
–60
–65
–30
–40
SSB NF
25°C
25°C
85°C
–40°C
LO-RF
–70
–75
–80
–50
–60
–70
f
= 1150MHz
LO
RF
–40°C
P
= –5dBm
G
C
LO-IF
50
250
450
650
850
1050
50
250
450
650
850
1050
1200 1400
1600
1800
2000
2200
IF OUTPUT FREQUENCY (MHz)
IF OUTPUT FREQUENCY (MHz)
LO FREQUENCY (MHz)
5522 G19
5522 G20
5522 G21
Conv Gain, IIP3 and SSB NF
vs LO Power (IF = 500MHz)
Conv Gain, IIP3 and SSB NF
vs Temperature (IF = 500MHz)
25
23
21
19
17
15
13
11
9
7
5
3
1
23
IIP3
21
19
17
15
13
11
9
7
5
3
1
IIP3
SSB NF
SSB NF
25°C
85°C
–40°C
f
P
f
= 1650MHz
= –5dBm
LO
LO
RF
= 1150MHz
f
f
= 1650MHz
= 1150MHz
LO
RF
G
G
C
C
–1
–3
–1
–3
–11
–9
–7
–5
–3
–1
1
0
25
–50
–25
50
75
100
LO INPUT POWER (dBm)
TEMPERATURE (°C)
5522 G22
5522 G23
IF Output Power and Spurious Products
vs RF Input Power (Single Tone)
IF Output Power, IM3 and IM5
vs RF Input Power (Two Input Tones)
10
0
10
0
T
= 25°C
A
IF OUT
(500MHz)
f
LO
f
RF
= 1650MHz
= 1150MHz
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
–10
–20
–30
–40
–50
–60
–70
–80
–90
IF OUT
T
= 25°C
A
f
LO
f
RF
= 1650MHz
= 1150MHz
2RF-2LO
IM3
IM5
(1000MHz)
2RF-LO
(650MHz)
3RF-2LO
(150MHz)
–21
–13 –9
–5
–1
3
7
–21
–15 –12 –9 –6 –3
–18
0
3
–17
RF INPUT POWER (dBm)
RF INPUT POWER (dBm/TONE)
5522 G24
5522 G25
5522fa
6
LT5522
W U
TYPICAL AC PERFOR A CE CHARACTERISTICS
450MHz Application (C5 = 8.2pF, 5mm away
from Pin 3) V = 5V, EN = High, T = 25°C, P = –7dBm (–7dBm/tone for 2-tone IIP3 tests, ∆f = 1MHz), P = –5dBm, IF output
CC
A
RF
LO
measured at 140MHz, unless otherwise noted. (Test circuit shown in Figure 2)
Single Tone IF Output Power and
Conv Gain vs RF Input Power
(RF = 450MHz)
Conv Gain, IIP3 and SSB NF
Conv Gain, IIP3 and SSB NF
vs RF Frequency (High Side LO)
vs LO Input Power (RF = 450MHz)
24
22
20
18
16
14
12
10
8
6
4
2
0
–2
24
22
20
18
16
14
12
10
8
6
4
2
0
–2
10
7
IIP3
IIP3
IF
OUT
4
SSB NF
SSB NF
1
25°C
85°C
–40°C
G
C
–2
–5
–8
–11
–14
HIGH SIDE LO
T
IF
= 25°C
= 140MHz
A
HIGH SIDE LO
f
T
f
= 25°C
= 140MHz
A
IF
HIGH SIDE LO
G
C
G
T
f
= 25°C
= 140MHz
C
A
IF
–4
–4
–12 –9 –6 –3
0
3
6
9
12
–11
–7
–5
–3
–1
1
350 370 390 410 430 450 470 490 510 530 550
RF INPUT FREQUENCY (MHz)
5522 G26
–9
RF INPUT POWER (dBm)
LO INPUT POWER (dBm)
5522 G28
5522 G27
W U
TYPICAL DC PERFOR A CE CHARACTERISTICS
(Test circuit shown in Figure 2)
Supply Current vs Supply Voltage
Shutdown Current vs Supply Voltage
100
10
1
57.0
56.5
56.0
55.5
55.0
54.5
54.0
53.5
53.0
85°C
25°C
25°C
–40°C
85°C
–40°C
0.1
4.5
4.75
5
5.25
5.5
5
4.5
4.75
5.25
5.5
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
5522 G30
5522 G29
5522fa
7
LT5522
U
U
U
PI FU CTIO S
NC(Pins 1, 4, 8, 13, 16): Not Connected Internally. These
pinsshouldbegroundedonthecircuitboardforimproved
LO to RF and LO to IF isolation.
RF+, RF– (Pins 2, 3): Differential Inputs for the RF Signal.
The RF input signal should be applied to the RF– pin (Pin
3) and the RF+ pin (Pin 2) must be connected to ground.
ThesepinsaretheprimarysideoftheRFinputbalunwhich
has low DC resistance. If the RF source is not DC blocked,
then a series blocking capacitor must be used.
externally connected to the VCC1 pin and decoupled with
0.01µF and 3.3µF capacitors.
GND (Pins 9, 12): Ground. These pins are internally
connected to the backside ground for improved isolation.
They should be connected to RF ground on the circuit
board, although they are not intended to replace the
primary grounding through the backside contact of the
package.
IF–, IF+ (Pins 10, 11): Differential Outputs for the IF
Signal. An impedance transformation may be required to
match the outputs. These pins must be connected to VCC
through impedance matching inductors, RF chokes or a
transformer center-tap.
LO–, LO+ (Pins 14, 15): Differential Inputs for the Local
Oscillator Signal. The LO input can also be driven single
ended by connecting one input to ground. These pins are
internally matched for 50Ω single-ended operation. If the
LO source is not AC-coupled, then a series blocking
capacitor must be used.
EN (Pin 5): Enable Pin. When the input enable voltage is
higher than 3V, the mixer circuits supplied through Pins 6,
7, 10 and 11 are enabled. When the input enable voltage is
lessthan0.3V,allcircuitsaredisabled.TypicalinputENpin
current is 55µA for EN = 5V and 0µA when EN = 0V. The EN
pin should not be left floating. Under no conditions should
the EN pin voltage exceed VCC + 0.3V, even at start-up.
VCC1 (Pin 6): Power Supply Pin for the LO Buffer Circuits.
Typical current consumption is 22mA. This pin should be
externally connected to the VCC2 pin and decoupled with
0.01µF and 3.3µF capacitors.
Exposed Pad (Pin 17): Circuit Ground Return for the
EntireIC.Thismustbesolderedtotheprintedcircuitboard
ground plane.
VCC2 (Pin 7): Power Supply Pin for the Bias Circuits.
Typical current consumption is 4mA. This pin should be
W
BLOCK DIAGRA
DOUBLE BALANCED
MIXER
GND
12
11
+
+
IF
RF
2
LINEAR
AMPLIFIER
–
–
IF
RF
3
10
9
GND
LIMITER
HIGH SPEED
LO BUFFER
+
LO
15
–
LO
14
BIAS
EN
5
EXPOSED
PAD
V
V
CC2
CC1
6
17
7
5522 BD
5522fa
8
LT5522
TEST CIRCUITS
LO IN
400MHz TO
2700MHz
RF
0.018
0.018
GND
0.062
ε
= 4.4
T1
R
16
15
+
14
–
13
NC
BIAS
GND
1
2
3
4
12
11
10
9
NC LO LO
NC
GND
L1
L2
3
2
1
4
+
+
RF
RF
IF
•
•
C3
C4
LT5522
RF IN
400MHz TO
2700MHz
5
IF OUT
140MHz
–
–
IF
L3
(HIGH
BAND)
C5
(LOW
BAND)
OR
NC
GND
OPTIONAL
SHUNT REACTANCE
USED FOR LOW BAND
OR HIGH BAND RF
MATCH ONLY
EN
V
V
NC
CC1 CC2
5
6
7
8
EN
V
CC
C1
C2
GND
5522 F02
REF DES
C1
VALUE
0.01µF
3.3µF
SIZE
0402
1206
0402
0402
PART NUMBER
REF DES
L1, L2
T1
VALUE
82nH
4:1
SIZE
PART NUMBER
Coilcraft 0603CS-82NX
M/A-Com ETC4-1-2 (2-800MHz)
Murata GRP155R71C103K
Taiyo Yuden LMK316BJ475ML
Murata GRP1555C1H101J
Murata GRP1555C1H1R5C
0603
C2
C3
100pF
1.5pF
C5
2.2pF
3.9nH
0402
0402
Murata GRP1555C1H1R5C (For Low Band Operation Only)
Coilcraft 0402CS-3N9X (For High Band Operation Only)
C4
L3
Figure 2. Test Schematic for Downmixer Application (140MHz IF) (DC689A)
LO IN
1200MHz TO
2200MHz
16
15
+
14
–
13
NC
1
2
3
4
12
11
NC LO LO
NC
GND
T1
C6
C7
L1
L2
4
5
3
+
IF
+
RF
RF
C3
2
LT5522
RF IN
1150MHz
(TYP)
IF OUT
50MHz TO
1000MHz
–
1
10
9
–
IF
C5
NC
GND
EN
V
V
NC
CC1 CC2
5
6
7
8
EN
V
CC
C1
C2
GND
5522 F03
REF DES
C1
VALUE
0.01µF
3.3µF
SIZE
0402
1206
0402
PART NUMBER
REF DES
C5
VALUE
1.5pF
18nH
4:1
SIZE
PART NUMBER
Murata GRP155R71C103K
Taiyo Yuden LMK316BJ475ML
Murata GRP155R71H331K
Murata GRP1555C1H1R5C
Toko LL1005-FH18NJ
C2
L1, L2
T1
0402
C3, C6, C7
330pF
M/A-Com MABAES0054 (5-1000MHz)
Figure 3. Test Schematic for CATV Infrastructure Downmixer Application (50MHz to 1000MHz IF) (DC651A)
5522fa
9
LT5522
W U U
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APPLICATIO S I FOR ATIO
Introduction
RF Input Port
The LT5522 consists of a high linearity double-balanced
mixer, RF buffer amplifier, high speed limiting LO buffer
amplifier and bias/enable circuits. The IC has been opti-
mizedfordownconverterapplicationswheretheRFinput
signalisinthe400MHzto2.7GHzrangeandtheLOsignal
isinthe400MHzto2.7GHzrange. Operationoverawider
RF input frequency range is possible with reduced
performance.
The mixer’s RF input, shown in Figure 4, consists of an
integrated balun and a high linearity differential amplifier.
The primary terminals of the balun are connected to the
RF+ andRF– pins(Pins2and3, respectively). Thesecond-
arysideofthebalunisinternallyconnectedtotheamplifier’s
differential inputs. For single-ended operation, the RF+ pin
is grounded and the RF– pin becomes the RF input. It is
also possible to ground the RF– pin and drive the RF+ pin,
although the LO to RF isolation will degrade slightly.
The IF output can be matched for IF frequencies as low as
100kHz or as high as 1GHz. The RF, LO and IF ports are all
differential, although the RF and LO ports are internally
matched for single-ended drive as shown in Figure 2. The
LT5522ischaracterizedandproduction-testedwithsingle-
ended RF and LO drive. Low side or high side LO injection
can be used.
The RF source must be AC-coupled since one terminal of
the balun’s primary is grounded. If the RF source has DC
voltage present, then a coupling capacitor must be used in
series with the RF input pin.
As shown in Figure 5, the RF input return loss, with no
external matching, is greater than 10dB from 1.2GHz to
2.4GHz. The RF input match can be shifted down in
frequencybyaddingashuntcapacitorattheRFinput. Two
examples are plotted in Figure 5. A 2.2pF capacitor,
located near Pin 3, produces a 900MHz match. An 8.2pF
capacitor, located5mmawayfromPin3(onthe50Ωline),
produces a 450MHz match. The RF input match can also
be shifted up in frequency by adding a shunt inductor near
Pin 3. One example is plotted in Figure 5, where a 3.9nH
inductor produces a 2.3GHz to 2.8GHz match.
Two evaluation boards are available. The standard board
is intended for most applications, including cellular, PCS,
UMTS and 2.4GHz. A schematic is shown in Figure 2 and
the board layout is shown in Figure 18. The 140MHz IF
output frequency on the standard board is easily changed
bymodifyingtheIFmatchingelements.Thesecondboard,
intended for CATV applications, incorporates a wideband
IF output balun. The CATV evaluation schematic is shown
in Figure 3 and the board layout is shown in Figure 19.
0
LT5522
L3 = 3.9nH
(HIGH BAND)
–5
–10
–15
–20
–25
–30
+
RF
2
TO
MIXER
RF IN
–
RF
3
C5
C5 = 8.2pF
L = 5mm
(450MHz)
OPTIONAL SHUNT
REACTANCE
C5 = 2.2pF
(900MHz)
NO EXTERNAL
MATCH
FOR LOW BAND
5522 F04
OR HIGH BAND
MATCHING (C5 OR L3)
2.2
3.2
3.7
0.2 0.7
1.2 1.7
2.7
RF FREQUENCY(GHz)
5522 F05
Figure 4. RF Input Schematic
Figure 5. RF Input Return Loss
5522fa
10
LT5522
W U U
APPLICATIO S I FOR ATIO
U
0
RF input impedance and S11 versus frequency are shown
in Table 1. The listed data is referenced to the RF– pin with
the RF+ pin grounded (no external matching). This infor-
mation can be used to simulate board-level interfacing to
an input filter, or to design a broadband input matching
network.
–5
–10
–15
–20
–25
A broadband RF input match is easily realized using the
shunt inductor/series capacitor network shown in Fig-
ure 6. This network provides good return loss at low and
high frequencies simultaneously, with reasonable
midband return loss. As shown in Figure 7, the RF input
return loss is greater than 12dB from 715MHz to 2.3GHz
using the element values shown in Figure 6. The input
match is optimum at 850MHz and 1900MHz, ideal for tri-
band GSM applications.
5E9
1E8
1E9
RF FREQUENCY (Hz)
5522 F07
Figure 7. RF Input Return Loss
Using Wideband Matching Network
LO Input Port
Table 1. RF Port Input Impedance vs Frequency
S11
The LO buffer amplifier consists of high speed limiting
differentialamplifiers,designedtodrivethemixerquadfor
high linearity. The LO+ and LO– pins are designed for
single-ended drive, although differential drive can be used
if a differential LO source is available. A schematic is
shown in Figure 8. Measured return loss is shown in
Figure 9.
FREQUENCY
(MHZ)
INPUT
IMPEDANCE
MAG
0.660
0.507
0.454
0.407
0.353
0.285
0.199
0.096
0.023
0.143
0.259
0.360
0.440
0.525
ANGLE
173.5
129.5
118.7
111.1
104.4
98.2
50
10.4 + j2.6
19.5 + j20.6
24.1 + j24.2
28.6 + j26.1
33.7 + j26.2
39.5 + j24.3
45.6 + j18.9
50.2 + j9.7
50.5 – j2.2
45.6 – j13.2
38.0 – j19.9
30.4 – j22.8
24.5 – j23.0
18.7 – j20.9
500
700
900
1100
1300
1500
1700
1900
2100
2300
2500
2700
3000
The LO source must be AC-coupled to avoid forward
biasing the ESD diodes. If the LO source has DC voltage
present, then a coupling capacitor must be used in series
with the LO input pin.
92.0
83.0
–76.0
–100.7
–108.3
–114.8
–120.7
–129.4
LO input impedance and S11 versus frequency are shown
in Table 2. The listed data is referenced to the LO+ pin with
the LO– pin grounded.
LT5522
15pF
–
LO
LT5522
14
+
–
RF
RF
TO
MIXER
480Ω
15pF
2
3
+
LO
LO IN
RFIN
15
C5
3.3pF
L3
10nH
5522 F06
5522 F08
Figure 6. Wideband RF Input Matching
Figure 8. LO Input Schematic
5522fa
11
LT5522
W U U
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APPLICATIO S I FOR ATIO
0
For IF frequencies below 140MHz, an 8:1 transformer
connected across the IF pins will perform impedance
transformation and provide a single-ended 50Ω output.
No other matching is required. Measured performance
using this technique is shown in Figure 12. Output return
loss is shown in Figure 13.
–5
–10
–15
–20
–25
–30
+
15mA
L1
LT5522
IF
4:1
IF OUT
11
460Ω
0.5pF
1E8
1E9
5E9
C4
L2
V
CC
LO FREQUENCY (Hz)
5522 F09
10
Figure 9. LO Input Return Loss
Table 2. LO Port Input Impedance vs Frequency
–
V
IF
CC
15mA
5522 F10
Figure 10. IF Output with External Matching
S11
FREQUENCY
(MHZ)
INPUT
IMPEDANCE
MAG
0.763
0.505
0.286
0.163
0.197
0.234
0.240
0.223
ANGLE
–14.3
+
LT5522
100
250
200.5 – j181.0
55.9 – j61.6
44.6 – j27.7
37.9 – j7.8
33.6 – j1.8
31.0 – j0.3
30.6 – j0.4
31.8 – j1.0
IF
0.7nH
0.7nH
11
–54.4
R
S
500
–84.8
1pF
400Ω
1000
1500
2000
2500
3000
–142.1
–172.3
–178.9
–178.4
–176.0
10
–
IF
5522 F11
Figure 11. IF Output Small-Signal Model
8
7
6
5
4
3
2
1
0
24
22
20
18
16
14
12
10
8
RF = 900MHz
RF = 1800MHz
IF Output Port
IIP3
TheIFoutputs, IF+ andIF–, areinternallyconnectedtothe
collectors of the mixer switching transistors (see Fig-
ure 10). Both pins must be biased at the supply voltage,
which can be applied through the center-tap of a trans-
formerorthroughmatchinginductors. EachIFpindraws
15mA of supply current (30mA total). For optimum
single-ended performance, these differential outputs
should be combined externally through an IF trans-
former. Both evaluation boards include IF transformers
for impedance transformation and differential to single-
ended transformation.
LOW SIDE LO
P
= –5dBm
LO
RF = 1800MHz
RF = 900MHz
G
C
–1
6
0
20
40
60
140
80 100 120
IF FREQUENCY (MHz)
5522 F12
Figure 12. Typical Conversion Gain and IIP3
Using an 8:1 IF Transformer
The IF output impedance can be modeled as 400Ω in
parallel with 1pF. An equivalent small-signal model (in-
cluding bondwire inductance) is shown in Figure 11. For
most applications, the bondwire inductance can be
ignored.
5522fa
12
LT5522
W U U
APPLICATIO S I FOR ATIO
U
0
Higher linearity and lower LO-IF leakage can be realized by
using the simple, three element lowpass matching net-
work shown in Figure 10. Matching elements C4, L1 and
L2 form a 400Ω to 200Ω lowpass matching network
which is tuned to the desired IF frequency. The 4:1
transformer then transforms the 200Ω differential output
to 50Ω single-ended. The value of C4 is reduced by 1pF to
account for the equivalent internal capacitance.
–5
–10
–15
–20
–25
For optimum linearity, C4 must be located close to the IF
pins. Excessive trace length or inductance between the IF
pinsandC4willincreasetheamplitudeoftheimageoutput
and reduce voltage swing headroom for the desired IF
frequency. High Q wire-wound chip inductors (L1 and L2)
improve the mixer’s conversion gain by a few tenths of a
dB, but have little effect on linearity.
1E9
1E7
1E8
IF FREQUENCY (Hz)
5522 F13
240MHz MATCH
LUMPED ELEMENT
BRIDGE BALUN
140MHz MATCH
(82nH/1.5pF)
4:1 BALUN
LOW FREQ MATCH
(NO IF MATCHING)
8:1 BALUN
50MHz TO 1000MHz
(18nH/0pF)
4:1 CATV BALUN
This matching network is most suitable for IF frequencies
of 40MHz or above. Below 40MHz, the value of the series
inductors (L1 and L2) is high, and could cause stability
problems, dependingontheinductorvalueandparasitics.
Therefore,the8:1transformertechniqueisrecommended
for low IF frequencies.
Figure 13. Typical IF Output Return Losses
for Various Matching Techniques
SAW
FILTER
IF
AMP
L1
L2
+
–
C3
IF
IF
C4
Suggested matching network values for several IF fre-
quencies are listed in Table 3. Measured output return
losses for the 140MHz match and the wideband CATV
match are plotted in Figure 13.
5522 F14
V
CC
Table 3. IF Matching Element Values (See Figure 10)
Figure 14. Bandpass IF Matching for Differential IF Architectures
IF FREQUENCY
(MHz)
L1, L2
(nH)
C4
(pF)
IF TRANSFORMER
TC8-1 (8:1)
account for the mixer’s internal 1pF capacitance and the
SAW filter’s input capacitance. In this case, the differential
IFoutputimpedanceis400Ω, sincethebandpassnetwork
does not transform the impedance.
2-140
Short
220
82
—
4.7
1.5
0.5
—
70
ETC4-1-2 (4:1)
140
240
56
380
39
For low cost applications, it is possible to replace the IF
transformer with a lumped-element network which pro-
duces a single-ended 50Ω output. One approach is shown
in Figure 15, where L1, L2, C4 and C6 form a narrowband
bridge balun. The L and C values are calculated to realize
a 180 degree phase shift at the desired IF frequency using
the equations listed below. Inductor L4 is calculated to
cancel the internal 1pF capacitance. L3 also supplies bias
voltage to the IF+ pin. Low cost multilayer chip inductors
are adequate for L1 and L2. A high Q wire-wound chip
50-1000 (CATV)
18
—
MABAES0054 (4:1)
For fully differential IF architectures, the IF transformer
can be eliminated. As shown in Figure 14, supply voltage
to the mixer’s IF pins is applied through matching induc-
tors in a bandpass IF matching network. The values of L1,
L2 and C4 are calculated to resonate at the desired IF
frequencywithaqualityfactorthatsatisfiestherequiredIF
bandwidth. The L and C values are then adjusted to
5522fa
13
LT5522
W U U
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APPLICATIO S I FOR ATIO
24
20
16
12
8
30
C4
L1
4.7pF
IIP3
+
100nH
C7
IF
10
1000pF
C6
4.7pF
L4
IF OUT
50Ω
–10
–30
–50
–70
–90
390nH
–
SSB NF
LO-IF
IF
C3
1000pF
L2
100nH
LOW SIDE LO
= –5dBm
P
LO
V
CC
IF = 240MHz
= 5VDC
5522 F15
V
A
CC
4
T
= 25°C
G
C
Figure 15. Narrowband Bridge IF Balun (240MHz Example)
0
1600
1800 1900 2000 2100 2200
RF INPUT FREQUENCY (MHz)
1700
inductor is recommended for L4 to preserve conversion
gain and minimize DC voltage drop to the IF+ pin. C7 is a
DC blocking capacitor and C3 is a bypass capacitor.
5522 F16
Figure 16. Typical Performance Using a
Narrowband Bridge Balun (Swept RF)
ZIF • ZOUT
(ZIF = 400)
L1,L2 =
21
19
17
15
13
11
9
10
ω
0
IIP3
SSB NF
LO-IF
1
–10
–20
–30
–40
–50
–60
–70
–80
–90
–100
C4,C6 =
ω • ZIF • ZOUT
LOW SIDE LO
= –5dBm
The narrowband bridge IF balun delivers good conversion
gain, linearityandnoisefigureoveralimitedIFbandwidth.
LO-IF leakage is approximately –32dBm, which is 17dB
worse than that obtained with a transformer. Typical IF
output return loss is plotted in Figure 13 for comparison
with other matching methods. Typical mixer performance
versus RF input frequency for 240MHz IF matching is
shown in Figure 16. Typical performance versus IF output
frequency for the same circuit is shown in Figure 17. The
results in Figure 17 show that the usable IF bandwidth is
approximately ±25MHz, assuming tight tolerance match-
ing components. Contact the factory for application assis-
tance with this circuit.
P
LO
RF = 1900MHz
= 5VDC
7
V
A
CC
5
T
= 25°C
3
G
C
1
–1
190 200 210 220 230 240 250 260 270 280 290
IF OUTPUT FREQUENCY (MHz)
5522 F17
Figure 17. Typical Performance Using a
Narrowband Bridge Balun (Swept IF)
5522fa
14
LT5522
U
PACKAGE DESCRIPTIO
UF Package
16-Lead Plastic QFN (4mm × 4mm)
(Reference LTC DWG # 05-08-1692)
0.72 ±0.05
4.35 ± 0.05
2.90 ± 0.05
2.15 ± 0.05
(4 SIDES)
PACKAGE OUTLINE
0.30 ±0.05
0.65 BSC
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS
BOTTOM VIEW—EXPOSED PAD
PIN 1 NOTCH R = 0.20 TYP
OR 0.35 × 45° CHAMFER
0.75 ± 0.05
R = 0.115
TYP
4.00 ± 0.10
(4 SIDES)
15
16
0.55 ± 0.20
PIN 1
TOP MARK
(NOTE 6)
1
2
2.15 ± 0.10
(4-SIDES)
(UF16) QFN 10-04
0.30 ± 0.05
0.65 BSC
0.200 REF
0.00 – 0.05
NOTE:
1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC)
2. DRAWING NOT TO SCALE
3. ALL DIMENSIONS ARE IN MILLIMETERS
4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE
MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE
5. EXPOSED PAD SHALL BE SOLDER PLATED
6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION
ON THE TOP AND BOTTOM OF PACKAGE
5522fa
Information furnished by Linear Technology Corporation is believed to be accurate and reliable.
However, no responsibility is assumed for its use. Linear Technology Corporation makes no represen-
tationthattheinterconnectionofitscircuitsasdescribedhereinwillnotinfringeonexistingpatentrights.
15
LT5522
W U U
U
APPLICATIO S I FOR ATIO
Figure 18. Standard Evaluation Board Layout
Figure 19. CATV Evaluation Board Layout
RELATED PARTS
PART NUMBER
DESCRIPTION
COMMENTS
LTC®1748
14-Bit, 80Msps, Low Noise ADC
76.3dB SNR, 90dB SFDR
LTC2222/LTC2223 12-Bit, 105Msps/80Msps ADC
Low Power 775MHz BW S/H, 61dB SNR, 75dB SFDR ±0.5V or ±1V Input
80dB Dynamic Range, Temperature Compensated, 2.7V to 5.5V Supply
>40dB Dynamic Range, Temperature Compensated, 2.7V to 6V Supply
1.8V to 5.25V Supply, 40MHz to 500MHz IF, –4dB to 57dB Linear Power Gain
48dB Dynamic Range, Temperature Compensated, 2.7V to 6V Supply
SC70 Package
LT5504
LTC5505
LT5506
LTC5507
LTC5508
LTC5509
LT5511
LT5512
LT5515
LT5516
800MHz to 2.7GHz RF Measuring Receiver
300MHz to 3.5GHz RF Power Detector
500MHz Quadrature IF Demodulator with VGA
100kHz to 1GHz RF Power Detector
300MHz to 7GHz RF Power Detector
300MHz to 3GHz RF Power Detector
High Signal Level Up Converting Mixer
High Signal Level Active Mixer
36dB Dynamic Range, SC70 Package
RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer
1kHz-3GHz, 20dBm IIP3, Integrated LO Buffer, HF/VHF/UHF Optimized
1.5GHz to 2.5GHz Direct Conversion Demodulator 20dBm IIP3, Integrated LO Quadrature Generator
0.8GHz to 1.5GHz Direct Conversion Quadrature 21.5dBm IIP3, Integrated LO Quadrature Generator
Demodulator
LT5521
LT5525
LT5527
LT5528
Very High Linearity Up Converting Mixer
3.7GHz Operation, +24.2dBm IIP3, 12.5dB NF, –42dBm LO Leakage,
Supply Voltage = 3.15V to 5V
0.8GHz to 2.5GHz Low Power Down Converting
Mixer
On-Chip Transformer for Single-Ended LO and RF Ports, +17.6dBm IIP3,
Integrated LO Buffer
400MHz to 3.7GHz High Signal Level
Downconverting Mixer
23.5dBm IIP3 at 1.9GHz, NF = 12.5dB, Single-Ended RF and LO Ports
2GHz High Linearity Direct Quadrature Modulator OIP3 = 21.8dBm, –159dBm/Hz Noise Floor, –66dBc Four Channel ACPR,
50Ω Single-End RF Output
LTC5532
LTC5534
300MHz to 7GHz Precision RF Power Detector
50MHz to 3GHz Log-Linear RF Power Detector
Precision V
Offset Control, Adjustable Gain and Offset Voltage
OUT
60dB Dynamic Range, Superb Temperature Stability, Tiny 2mm × 2mm SC70
Package, Low Power Consumption
5522fa
LT 1105 REV A • PRINTED IN USA
LinearTechnology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
16
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(408) 432-1900 FAX: (408) 434-0507 www.linear.com
© LINEAR TECHNOLOGY CORPORATION 2003
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